JP6472459B2 - オプトエレクトロニクス半導体チップの製造方法及びオプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体チップの製造方法及びオプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 132
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 230000005693 optoelectronics Effects 0.000 title claims description 10
- 230000006911 nucleation Effects 0.000 claims description 92
- 238000010899 nucleation Methods 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 66
- 239000001301 oxygen Substances 0.000 claims description 59
- 229910052760 oxygen Inorganic materials 0.000 claims description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 22
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 131
- 239000013078 crystal Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- GCPCLEKQVMKXJM-UHFFFAOYSA-N ethoxy(diethyl)alumane Chemical compound CCO[Al](CC)CC GCPCLEKQVMKXJM-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (10)
- エレクトロニクス半導体チップ(100)の製造方法であって、
− 平坦な面(11)により形成される成長表面(10)を備えた成長基板(1)を準備するステップであって、前記平坦な面(11)上に三次元的に成形された複数の表面構造(12)を備えている、ステップと
− 前記成長表面(10)上に直接、酸素を含むAlNからなる核形成層(2)を大面積で施すステップと、
− 前記核形成層(2)上に、窒化物を基礎とする半導体積層部(3)を成長させるステップであって、前記半導体積層部(3)を前記平坦な面(11)から選択的に成長させ、したがって、前記半導体積層部(3)は実質的に前記平坦な面からだけ成長し、前記表面構造(12)上では、前記半導体積層部の成長が極めてわずかに行われるか又はそれどころか前記半導体積層部の成長が行われない、ステップと
を含み、
前記平坦な面からの前記半導体積層部(3)の成長の選択性は、前記核形成層(2)の酸素含有率によって調節される、
エレクトロニクス半導体チップ(100)の製造方法。 - 前記核形成層(2)中の酸素の含有率は1019cm-3より多いので、前記三次元的に成形された表面構造(12)上での半導体材料の成長はわずかに行われるだけであるか又は全く行われない、請求項1に記載の方法。
- 前記三次元的に成形された表面構造(12)は、前記半導体積層部(3)の成長の際に、前記半導体積層部(3)によりほぼ覆われる、請求項1又は2に記載の方法。
- 有機金属気相成長によって前記核形成層(2)を施す、請求項1から3までのいずれか1項に記載の方法。
- スパッタリングによって前記核形成層(2)を施す、請求項1から3までのいずれか1項に記載の方法。
- 前記三次元的に成形された表面構造(12)を、前記平坦な面(11)上に円錐形の又は角錐形の突出部により形成させる、請求項1から5までのいずれか1項記載の方法。
- 前記成長基板(1)は、酸化アルミニウムを含むか又は酸化アルミニウムからなる、請求項1から6までのいずれか1項に記載の方法。
- 前記平坦な面(11)は、結晶学的c面である、請求項7に記載の方法。
- 前記半導体チップ(100)の作動時に、光の放射又は検出が予定されているオプトエレクトロニクス能動層(34)を備えた前記半導体積層部(3)を成長させる、請求項1から8までのいずれか1項に記載の方法。
- 前記半導体チップ(100)は、発光ダイオード又は光検出ダイオードとして構成される、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014101966.0A DE102014101966A1 (de) | 2014-02-17 | 2014-02-17 | Verfahren zur Herstellung eines elektronischen Halbleiterchips und elektronischer Halbleiterchip |
DE102014101966.0 | 2014-02-17 | ||
PCT/EP2015/053051 WO2015121399A1 (de) | 2014-02-17 | 2015-02-13 | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
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JP2017506434A JP2017506434A (ja) | 2017-03-02 |
JP6472459B2 true JP6472459B2 (ja) | 2019-02-20 |
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US (4) | US10312401B2 (ja) |
JP (1) | JP6472459B2 (ja) |
KR (3) | KR102304639B1 (ja) |
CN (1) | CN106030834B (ja) |
DE (2) | DE102014101966A1 (ja) |
WO (1) | WO2015121399A1 (ja) |
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DE102015109761B4 (de) | 2015-06-18 | 2022-01-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement |
CN105470357B (zh) * | 2015-12-31 | 2018-05-22 | 华灿光电(苏州)有限公司 | AlN模板、AlN模板的制备方法及AlN模板上的半导体器件 |
CN105633233B (zh) * | 2015-12-31 | 2018-01-12 | 华灿光电(苏州)有限公司 | AlN模板、AlN模板的制备方法及AlN模板上的半导体器件 |
CN107180884B (zh) * | 2016-03-11 | 2019-04-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种半极性AlN模板 |
TWI577842B (zh) * | 2016-05-30 | 2017-04-11 | 光鋐科技股份有限公司 | 氮化鋁鎵的成長方法 |
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US11888083B2 (en) | 2024-01-30 |
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KR20210118221A (ko) | 2021-09-29 |
KR102232546B1 (ko) | 2021-03-26 |
US20190245110A1 (en) | 2019-08-08 |
WO2015121399A1 (de) | 2015-08-20 |
US10312401B2 (en) | 2019-06-04 |
KR102304639B1 (ko) | 2021-09-24 |
DE112015000824A5 (de) | 2016-11-03 |
US11430907B2 (en) | 2022-08-30 |
CN106030834B (zh) | 2020-03-06 |
KR20210034113A (ko) | 2021-03-29 |
US20210210651A1 (en) | 2021-07-08 |
DE112015000824B4 (de) | 2021-07-08 |
DE102014101966A1 (de) | 2015-08-20 |
US20170005223A1 (en) | 2017-01-05 |
KR20160123300A (ko) | 2016-10-25 |
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