JP2017525159A5 - - Google Patents
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- JP2017525159A5 JP2017525159A5 JP2017507866A JP2017507866A JP2017525159A5 JP 2017525159 A5 JP2017525159 A5 JP 2017525159A5 JP 2017507866 A JP2017507866 A JP 2017507866A JP 2017507866 A JP2017507866 A JP 2017507866A JP 2017525159 A5 JP2017525159 A5 JP 2017525159A5
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- JP
- Japan
- Prior art keywords
- shell
- semiconductor
- nanowire
- indium
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462036363P | 2014-08-12 | 2014-08-12 | |
| US62/036,363 | 2014-08-12 | ||
| PCT/US2015/044245 WO2016025325A1 (en) | 2014-08-12 | 2015-08-07 | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017525159A JP2017525159A (ja) | 2017-08-31 |
| JP2017525159A5 true JP2017525159A5 (enExample) | 2018-09-20 |
| JP6505208B2 JP6505208B2 (ja) | 2019-04-24 |
Family
ID=55304513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017507866A Active JP6505208B2 (ja) | 2014-08-12 | 2015-08-07 | ひずみ改質された表面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9882086B2 (enExample) |
| EP (1) | EP3180806A4 (enExample) |
| JP (1) | JP6505208B2 (enExample) |
| KR (1) | KR20170066319A (enExample) |
| CN (1) | CN107251239B (enExample) |
| WO (1) | WO2016025325A1 (enExample) |
Families Citing this family (30)
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|---|---|---|---|---|
| JP5836122B2 (ja) | 2008-07-07 | 2015-12-24 | グロ アーベーＧｌｏ Ａｂ | ナノ構造のｌｅｄ |
| US11502219B2 (en) * | 2013-03-14 | 2022-11-15 | The Royal Institution For The Advancement Of Learning/Mcgill University | Methods and devices for solid state nanowire devices |
| US10483319B2 (en) | 2014-08-08 | 2019-11-19 | Glo Ab | Pixilated display device based upon nanowire LEDs and method for making the same |
| EP3180806A4 (en) | 2014-08-12 | 2018-03-07 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| US9620559B2 (en) | 2014-09-26 | 2017-04-11 | Glo Ab | Monolithic image chip for near-to-eye display |
| DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
| KR101787435B1 (ko) * | 2016-02-29 | 2017-10-19 | 피에스아이 주식회사 | 나노 로드 제조방법 |
| KR20180133436A (ko) | 2016-05-04 | 2018-12-14 | 글로 에이비 | 상이한 색상의 led를 포함하는 일체형 다색 직시형 디스플레이와 이의 제조 방법 |
| TWI718343B (zh) | 2016-10-24 | 2021-02-11 | 瑞典商Ｇｌｏ公司 | 發光二極體、顯示裝置及直視顯示裝置 |
| CN107749437A (zh) * | 2017-11-17 | 2018-03-02 | 广州市香港科大霍英东研究院 | 可挠性发光二极管制程及其结构 |
| US11605668B2 (en) | 2018-05-21 | 2023-03-14 | Intel Corporation | Pixel architectures for low power micro light-emitting diode displays |
| CN109037401A (zh) * | 2018-06-21 | 2018-12-18 | 中国工程物理研究院电子工程研究所 | 一种氮化镓基水平纳米柱壳核结构阵列led的制备方法 |
| CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11156759B2 (en) | 2019-01-29 | 2021-10-26 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7558175B2 (ja) | 2019-01-29 | 2024-09-30 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | ビデオウォール、ドライバ回路、駆動制御回路およびそれらに関する方法 |
| US11610868B2 (en) | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| CN109860355A (zh) * | 2019-02-02 | 2019-06-07 | 苏州汉骅半导体有限公司 | 深紫外led制备方法 |
| US12261256B2 (en) | 2019-02-11 | 2025-03-25 | Osram Opto Semiconductors Gmbh | Optoelectronic component, optoelectronic arrangement and method |
| KR20260016601A (ko) | 2019-04-23 | 2026-02-03 | 에이엠에스-오스람 인터내셔널 게엠베하 | Led 모듈, led 디스플레이 모듈 및 그 제조 방법 |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| CN114303236A (zh) | 2019-05-13 | 2022-04-08 | 奥斯兰姆奥普托半导体股份有限两合公司 | 多芯片承载结构 |
| CN114144727A (zh) | 2019-05-23 | 2022-03-04 | 奥斯兰姆奥普托半导体股份有限两合公司 | 照明装置、导光装置和方法 |
| US10930747B2 (en) * | 2019-06-04 | 2021-02-23 | Nxp B.V. | Semiconductor device with an encircled electrode |
| JP7336767B2 (ja) * | 2019-10-03 | 2023-09-01 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
| DE112020004395A5 (de) | 2019-09-20 | 2022-06-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, optoelektronische anordnung und verfahren |
| KR102902635B1 (ko) | 2020-02-04 | 2025-12-23 | 삼성전자주식회사 | 3차원 구조 반도체 발광소자 및 디스플레이 장치 |
| US20230317871A1 (en) * | 2022-03-30 | 2023-10-05 | The Board Of Trustees Of The University Of Illinois | Light emitting diode (led) structures for a microled device, and method for producing an array of led structures |
| CN116014043B (zh) * | 2023-03-24 | 2023-06-02 | 江西兆驰半导体有限公司 | 深紫外发光二极管外延片及其制备方法、led |
Family Cites Families (29)
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|---|---|---|---|---|
| JP3660446B2 (ja) * | 1996-11-07 | 2005-06-15 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
| JP3282174B2 (ja) | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP4158519B2 (ja) * | 2002-12-26 | 2008-10-01 | 住友電気工業株式会社 | 白色発光素子およびその製造方法 |
| US7968359B2 (en) | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
| US20140012224A1 (en) | 2006-04-07 | 2014-01-09 | The Regents Of The University Of California | Targeted hollow gold nanostructures and methods of use |
| CN101669219B (zh) | 2006-12-22 | 2011-10-05 | 昆南诺股份有限公司 | 带有直立式纳米线结构的led及其制作方法 |
| CN101681813B (zh) | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| US8188513B2 (en) * | 2007-10-04 | 2012-05-29 | Stc.Unm | Nanowire and larger GaN based HEMTS |
| JP2009105088A (ja) | 2007-10-19 | 2009-05-14 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| JP4856666B2 (ja) | 2008-03-26 | 2012-01-18 | 独立行政法人科学技術振興機構 | 発光ダイオード素子及びその製造方法 |
| US8138493B2 (en) | 2008-07-09 | 2012-03-20 | Qunano Ab | Optoelectronic semiconductor device |
| KR101549620B1 (ko) | 2009-01-30 | 2015-09-02 | 삼성전자주식회사 | ｐｎ 구조를 지닌 Ｚｎ 산화물 나노 와이어 및 그 제조 방법 |
| KR20110064702A (ko) | 2009-12-08 | 2011-06-15 | 삼성전자주식회사 | 요철 구조를 지닌 코어-쉘 나노 와이어 및 이를 이용한 열전 소자 |
| US9112240B2 (en) | 2010-01-04 | 2015-08-18 | Nanotek Instruments, Inc. | Lithium metal-sulfur and lithium ion-sulfur secondary batteries containing a nano-structured cathode and processes for producing same |
| US8138439B2 (en) | 2010-02-11 | 2012-03-20 | Eaton Corporation | Limiter including a number of gas channels and electrical switching apparatus employing the same |
| KR101495971B1 (ko) | 2010-04-02 | 2015-02-25 | 인텔 코오퍼레이션 | 전하 저장 디바이스, 이를 제조하는 방법, 이를 위한 전기 도전성 구조를 제조하는 방법, 이를 이용하는 이동 전자 디바이스, 및 이를 포함하는 마이크로전자 디바이스 |
| SG186312A1 (en) | 2010-06-24 | 2013-02-28 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
| FR2975532B1 (fr) * | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
| KR101691906B1 (ko) * | 2010-09-14 | 2017-01-02 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광 소자 제조방법 |
| KR20120052651A (ko) * | 2010-11-16 | 2012-05-24 | 삼성엘이디 주식회사 | 나노로드 발광소자 |
| KR20120059064A (ko) | 2010-11-30 | 2012-06-08 | 삼성엘이디 주식회사 | 발광소자 및 그 제조방법 |
| US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| TWI476953B (zh) * | 2012-08-10 | 2015-03-11 | Univ Nat Taiwan | 半導體發光元件及其製作方法 |
| US9166106B2 (en) | 2012-10-26 | 2015-10-20 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| JP6070257B2 (ja) * | 2013-02-21 | 2017-02-01 | 株式会社リコー | １３族窒化物結晶の製造方法、及び１３族窒化物結晶の製造装置 |
| WO2014197799A1 (en) | 2013-06-07 | 2014-12-11 | Glo-Usa, Inc. | Multicolor led and method of fabricating thereof |
| US9281442B2 (en) * | 2013-12-17 | 2016-03-08 | Glo Ab | III-nitride nanowire LED with strain modified surface active region and method of making thereof |
| US10483319B2 (en) * | 2014-08-08 | 2019-11-19 | Glo Ab | Pixilated display device based upon nanowire LEDs and method for making the same |
| EP3180806A4 (en) | 2014-08-12 | 2018-03-07 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
-
2015
- 2015-08-07 EP EP15832263.6A patent/EP3180806A4/en not_active Withdrawn
- 2015-08-07 CN CN201580050665.6A patent/CN107251239B/zh not_active Expired - Fee Related
- 2015-08-07 JP JP2017507866A patent/JP6505208B2/ja active Active
- 2015-08-07 WO PCT/US2015/044245 patent/WO2016025325A1/en not_active Ceased
- 2015-08-07 US US15/502,758 patent/US9882086B2/en active Active
- 2015-08-07 KR KR1020177005165A patent/KR20170066319A/ko not_active Withdrawn
-
2018
- 2018-01-03 US US15/861,013 patent/US10205054B2/en active Active
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