KR20170066319A - 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 - Google Patents

스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 Download PDF

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KR20170066319A
KR20170066319A KR1020177005165A KR20177005165A KR20170066319A KR 20170066319 A KR20170066319 A KR 20170066319A KR 1020177005165 A KR1020177005165 A KR 1020177005165A KR 20177005165 A KR20177005165 A KR 20177005165A KR 20170066319 A KR20170066319 A KR 20170066319A
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shell
nanowire
indium
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린다 로마노
핑 왕
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글로 에이비
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    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
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    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
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    • H10H20/80—Constructional details
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
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    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
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KR1020177005165A 2014-08-12 2015-08-07 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 Withdrawn KR20170066319A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462036363P 2014-08-12 2014-08-12
US62/036,363 2014-08-12
PCT/US2015/044245 WO2016025325A1 (en) 2014-08-12 2015-08-07 Iii-nitride nanowire led with strain modified surface active region and method of making thereof

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KR20170066319A true KR20170066319A (ko) 2017-06-14

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US (2) US9882086B2 (enExample)
EP (1) EP3180806A4 (enExample)
JP (1) JP6505208B2 (enExample)
KR (1) KR20170066319A (enExample)
CN (1) CN107251239B (enExample)
WO (1) WO2016025325A1 (enExample)

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CN107251239B (zh) 2019-06-28
CN107251239A (zh) 2017-10-13
EP3180806A1 (en) 2017-06-21
WO2016025325A1 (en) 2016-02-18
WO2016025325A9 (en) 2017-03-23
US20180145218A1 (en) 2018-05-24
JP6505208B2 (ja) 2019-04-24
US9882086B2 (en) 2018-01-30
US20170236975A1 (en) 2017-08-17
EP3180806A4 (en) 2018-03-07
JP2017525159A (ja) 2017-08-31
US10205054B2 (en) 2019-02-12

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