JP6505208B2 - ひずみ改質された表面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄおよびその製造方法 - Google Patents
ひずみ改質された表面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄおよびその製造方法 Download PDFInfo
- Publication number
- JP6505208B2 JP6505208B2 JP2017507866A JP2017507866A JP6505208B2 JP 6505208 B2 JP6505208 B2 JP 6505208B2 JP 2017507866 A JP2017507866 A JP 2017507866A JP 2017507866 A JP2017507866 A JP 2017507866A JP 6505208 B2 JP6505208 B2 JP 6505208B2
- Authority
- JP
- Japan
- Prior art keywords
- shell
- indium
- semiconductor
- plane
- nanowire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002070 nanowire Substances 0.000 title claims description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 150000004767 nitrides Chemical class 0.000 title claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 103
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000002950 deficient Effects 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 230000007812 deficiency Effects 0.000 claims 1
- 238000010348 incorporation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462036363P | 2014-08-12 | 2014-08-12 | |
| US62/036,363 | 2014-08-12 | ||
| PCT/US2015/044245 WO2016025325A1 (en) | 2014-08-12 | 2015-08-07 | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017525159A JP2017525159A (ja) | 2017-08-31 |
| JP2017525159A5 JP2017525159A5 (enExample) | 2018-09-20 |
| JP6505208B2 true JP6505208B2 (ja) | 2019-04-24 |
Family
ID=55304513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017507866A Active JP6505208B2 (ja) | 2014-08-12 | 2015-08-07 | ひずみ改質された表面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9882086B2 (enExample) |
| EP (1) | EP3180806A4 (enExample) |
| JP (1) | JP6505208B2 (enExample) |
| KR (1) | KR20170066319A (enExample) |
| CN (1) | CN107251239B (enExample) |
| WO (1) | WO2016025325A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2297794B1 (en) | 2008-07-07 | 2017-09-06 | Glo Ab | Nanostructured light emitting diode |
| WO2014138904A1 (en) * | 2013-03-14 | 2014-09-18 | The Royal Institution For The Advancement Of Learning/Mcgill University | Methods and devices for solid state nanowire devices |
| WO2016022824A1 (en) | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
| KR20170066319A (ko) | 2014-08-12 | 2017-06-14 | 글로 에이비 | 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 |
| WO2016049507A1 (en) | 2014-09-26 | 2016-03-31 | Glo Ab | Monolithic image chip for near-to-eye display |
| DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
| KR101787435B1 (ko) | 2016-02-29 | 2017-10-19 | 피에스아이 주식회사 | 나노 로드 제조방법 |
| US9978808B2 (en) | 2016-05-04 | 2018-05-22 | Glo Ab | Monolithic multicolor direct view display containing different color LEDs and method of making thereof |
| TWI718343B (zh) | 2016-10-24 | 2021-02-11 | 瑞典商Ｇｌｏ公司 | 發光二極體、顯示裝置及直視顯示裝置 |
| CN107749437A (zh) * | 2017-11-17 | 2018-03-02 | 广州市香港科大霍英东研究院 | 可挠性发光二极管制程及其结构 |
| US11605668B2 (en) * | 2018-05-21 | 2023-03-14 | Intel Corporation | Pixel architectures for low power micro light-emitting diode displays |
| CN109037401A (zh) * | 2018-06-21 | 2018-12-18 | 中国工程物理研究院电子工程研究所 | 一种氮化镓基水平纳米柱壳核结构阵列led的制备方法 |
| CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| US11610868B2 (en) | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11156759B2 (en) | 2019-01-29 | 2021-10-26 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| DE112020000561A5 (de) | 2019-01-29 | 2021-12-02 | Osram Opto Semiconductors Gmbh | Videowand, treiberschaltung, ansteuerungen und verfahren derselben |
| CN109860355A (zh) * | 2019-02-02 | 2019-06-07 | 苏州汉骅半导体有限公司 | 深紫外led制备方法 |
| JP7642549B2 (ja) | 2019-02-11 | 2025-03-10 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、光電子配置構造体および方法 |
| WO2020216549A1 (de) | 2019-04-23 | 2020-10-29 | Osram Opto Semiconductors Gmbh | Led modul, led displaymodul und verfahren zu dessen herstellung |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7608368B2 (ja) | 2019-05-13 | 2025-01-06 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | マルチチップ用キャリア構造体 |
| JP7494215B2 (ja) | 2019-05-23 | 2024-06-03 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | 照明配置構造体、光誘導配置構造体およびそれらに関する方法 |
| US10930747B2 (en) * | 2019-06-04 | 2021-02-23 | Nxp B.V. | Semiconductor device with an encircled electrode |
| JP7336767B2 (ja) * | 2019-10-03 | 2023-09-01 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
| JP7594578B2 (ja) | 2019-09-20 | 2024-12-04 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、半導体構造およびそれらに関する方法 |
| US11784285B2 (en) | 2020-02-04 | 2023-10-10 | Samsung Electronics Co., Ltd. | Three dimensionally structured semiconductor light emitting diode and display apparatus |
| CN116014043B (zh) * | 2023-03-24 | 2023-06-02 | 江西兆驰半导体有限公司 | 深紫外发光二极管外延片及其制备方法、led |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3660446B2 (ja) * | 1996-11-07 | 2005-06-15 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
| JP3282174B2 (ja) | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP4158519B2 (ja) * | 2002-12-26 | 2008-10-01 | 住友電気工業株式会社 | 白色発光素子およびその製造方法 |
| US7968359B2 (en) | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
| US20140012224A1 (en) | 2006-04-07 | 2014-01-09 | The Regents Of The University Of California | Targeted hollow gold nanostructures and methods of use |
| JP5453105B2 (ja) | 2006-12-22 | 2014-03-26 | クナノ アーベー | ナノ構造のｌｅｄ及びデバイス |
| CN101681813B (zh) | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| US8188513B2 (en) * | 2007-10-04 | 2012-05-29 | Stc.Unm | Nanowire and larger GaN based HEMTS |
| JP2009105088A (ja) | 2007-10-19 | 2009-05-14 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| JP4856666B2 (ja) * | 2008-03-26 | 2012-01-18 | 独立行政法人科学技術振興機構 | 発光ダイオード素子及びその製造方法 |
| US8138493B2 (en) | 2008-07-09 | 2012-03-20 | Qunano Ab | Optoelectronic semiconductor device |
| KR101549620B1 (ko) | 2009-01-30 | 2015-09-02 | 삼성전자주식회사 | ｐｎ 구조를 지닌 Ｚｎ 산화물 나노 와이어 및 그 제조 방법 |
| KR20110064702A (ko) | 2009-12-08 | 2011-06-15 | 삼성전자주식회사 | 요철 구조를 지닌 코어-쉘 나노 와이어 및 이를 이용한 열전 소자 |
| US9112240B2 (en) | 2010-01-04 | 2015-08-18 | Nanotek Instruments, Inc. | Lithium metal-sulfur and lithium ion-sulfur secondary batteries containing a nano-structured cathode and processes for producing same |
| US8138439B2 (en) | 2010-02-11 | 2012-03-20 | Eaton Corporation | Limiter including a number of gas channels and electrical switching apparatus employing the same |
| EP2553696A4 (en) | 2010-04-02 | 2016-07-06 | Intel Corp | LOAD MEMORY DEVICE, METHOD OF MANUFACTURING THEREFOR, METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE STRUCTURE THEREFOR, MOBILE ELECTRONIC DEVICE THEREWITH AND MICROELECTRONIC DEVICE THEREWITH |
| EP2586062A4 (en) | 2010-06-24 | 2015-06-03 | Glo Ab | SUBSTRATE WITH BUFFER LAYER FOR ALIGNED NANODRAHT GROWTH |
| FR2975532B1 (fr) * | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
| KR101691906B1 (ko) * | 2010-09-14 | 2017-01-02 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광 소자 제조방법 |
| KR20120052651A (ko) * | 2010-11-16 | 2012-05-24 | 삼성엘이디 주식회사 | 나노로드 발광소자 |
| KR20120059064A (ko) | 2010-11-30 | 2012-06-08 | 삼성엘이디 주식회사 | 발광소자 및 그 제조방법 |
| US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| TWI476953B (zh) * | 2012-08-10 | 2015-03-11 | Univ Nat Taiwan | 半導體發光元件及其製作方法 |
| WO2014066379A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| JP6070257B2 (ja) * | 2013-02-21 | 2017-02-01 | 株式会社リコー | １３族窒化物結晶の製造方法、及び１３族窒化物結晶の製造装置 |
| US9054233B2 (en) | 2013-06-07 | 2015-06-09 | Glo Ab | Multicolor LED and method of fabricating thereof |
| EP3084847B1 (en) * | 2013-12-17 | 2018-02-14 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| WO2016022824A1 (en) * | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
| KR20170066319A (ko) | 2014-08-12 | 2017-06-14 | 글로 에이비 | 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 |
-
2015
- 2015-08-07 KR KR1020177005165A patent/KR20170066319A/ko not_active Withdrawn
- 2015-08-07 US US15/502,758 patent/US9882086B2/en active Active
- 2015-08-07 EP EP15832263.6A patent/EP3180806A4/en not_active Withdrawn
- 2015-08-07 CN CN201580050665.6A patent/CN107251239B/zh not_active Expired - Fee Related
- 2015-08-07 JP JP2017507866A patent/JP6505208B2/ja active Active
- 2015-08-07 WO PCT/US2015/044245 patent/WO2016025325A1/en not_active Ceased
-
2018
- 2018-01-03 US US15/861,013 patent/US10205054B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107251239B (zh) | 2019-06-28 |
| CN107251239A (zh) | 2017-10-13 |
| EP3180806A1 (en) | 2017-06-21 |
| WO2016025325A1 (en) | 2016-02-18 |
| WO2016025325A9 (en) | 2017-03-23 |
| US20180145218A1 (en) | 2018-05-24 |
| US9882086B2 (en) | 2018-01-30 |
| US20170236975A1 (en) | 2017-08-17 |
| EP3180806A4 (en) | 2018-03-07 |
| JP2017525159A (ja) | 2017-08-31 |
| US10205054B2 (en) | 2019-02-12 |
| KR20170066319A (ko) | 2017-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6505208B2 (ja) | ひずみ改質された表面活性領域を有するｉｉｉ族窒化物ナノワイヤｌｅｄおよびその製造方法 | |
| US10026866B2 (en) | III-nitride nanowire LED with strain modified surface active region and method of making thereof | |
| JP6486519B2 (ja) | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 | |
| JP5838090B2 (ja) | オプトエレクトロニクス半導体デバイス | |
| US9368672B2 (en) | Removal of 3D semiconductor structures by dry etching | |
| US9640723B2 (en) | Insulating layer for planarization and definition of the active region of a nanowire device | |
| US9196787B2 (en) | Nanowire LED structure with decreased leakage and method of making same | |
| US20220352398A1 (en) | Composition of matter | |
| US9196792B2 (en) | Nanowire LED structure with decreased leakage and method of making same | |
| Samuelson | Nanowire LEDs and Solar Cells | |
| Samuelson | Nanowire-based LEDs and photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180806 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180806 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180806 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181015 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20181018 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181029 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190125 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190301 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190326 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6505208 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |