JP2011505073A5 - - Google Patents

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Publication number
JP2011505073A5
JP2011505073A5 JP2010535212A JP2010535212A JP2011505073A5 JP 2011505073 A5 JP2011505073 A5 JP 2011505073A5 JP 2010535212 A JP2010535212 A JP 2010535212A JP 2010535212 A JP2010535212 A JP 2010535212A JP 2011505073 A5 JP2011505073 A5 JP 2011505073A5
Authority
JP
Japan
Prior art keywords
semiconductor body
optoelectronic semiconductor
electrical contact
recess
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010535212A
Other languages
English (en)
Japanese (ja)
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JP2011505073A (ja
Filing date
Publication date
Priority claimed from DE102007057756.9A external-priority patent/DE102007057756B4/de
Application filed filed Critical
Publication of JP2011505073A publication Critical patent/JP2011505073A/ja
Publication of JP2011505073A5 publication Critical patent/JP2011505073A5/ja
Pending legal-status Critical Current

Links

JP2010535212A 2007-11-30 2008-11-26 オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法 Pending JP2011505073A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
PCT/DE2008/001957 WO2009068006A2 (de) 2007-11-30 2008-11-26 Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers

Publications (2)

Publication Number Publication Date
JP2011505073A JP2011505073A (ja) 2011-02-17
JP2011505073A5 true JP2011505073A5 (enExample) 2012-01-05

Family

ID=40455567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010535212A Pending JP2011505073A (ja) 2007-11-30 2008-11-26 オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法

Country Status (7)

Country Link
US (1) US20110204322A1 (enExample)
JP (1) JP2011505073A (enExample)
KR (1) KR20100097188A (enExample)
CN (1) CN101878546B (enExample)
DE (1) DE102007057756B4 (enExample)
TW (1) TWI474501B (enExample)
WO (1) WO2009068006A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5052636B2 (ja) 2010-03-11 2012-10-17 株式会社東芝 半導体発光素子
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
DE102010032497A1 (de) 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
CN102694096A (zh) * 2011-03-21 2012-09-26 华新丽华股份有限公司 发光二极管及其制造方法
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US104081A (en) * 1870-06-07 Improvement in scaffold-bracket
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3374737B2 (ja) * 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
JPH10294491A (ja) 1997-04-22 1998-11-04 Toshiba Corp 半導体発光素子およびその製造方法ならびに発光装置
JP4119501B2 (ja) * 1997-07-10 2008-07-16 ローム株式会社 半導体発光素子
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3804335B2 (ja) 1998-11-26 2006-08-02 ソニー株式会社 半導体レーザ
JP4040192B2 (ja) 1998-11-26 2008-01-30 ソニー株式会社 半導体発光素子の製造方法
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US7319247B2 (en) 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6429460B1 (en) * 2000-09-28 2002-08-06 United Epitaxy Company, Ltd. Highly luminous light emitting device
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6649942B2 (en) 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP2004343139A (ja) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd 化合物半導体発光素子
JP4148494B2 (ja) * 2001-12-04 2008-09-10 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP2007116192A (ja) * 2002-03-26 2007-05-10 Sanyo Electric Co Ltd 窒化物系半導体装置
TW200414563A (en) * 2003-01-30 2004-08-01 South Epitaxy Corp Light emitting diode and a method of manufacturing the same
TW200509408A (en) * 2003-08-20 2005-03-01 Epistar Corp Nitride light-emitting device with high light-emitting efficiency
JP2005085932A (ja) * 2003-09-08 2005-03-31 Toyoda Gosei Co Ltd 発光ダイオード及びその製造方法
TWI234295B (en) 2003-10-08 2005-06-11 Epistar Corp High-efficiency nitride-based light-emitting device
JP2005150675A (ja) * 2003-11-18 2005-06-09 Itswell Co Ltd 半導体発光ダイオードとその製造方法
JP2005197573A (ja) * 2004-01-09 2005-07-21 Sharp Corp Ｉｉｉ族窒化物半導体発光素子
JP4368225B2 (ja) * 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
TWI244222B (en) * 2004-03-11 2005-11-21 Epistar Corp A ternary nitride buffer layer containing nitride light-emitting device and manufacturing method of the same
KR101361630B1 (ko) 2004-04-29 2014-02-11 오스람 옵토 세미컨덕터스 게엠베하 방사선 방출 반도체 칩의 제조 방법
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
JP2006135311A (ja) * 2004-10-08 2006-05-25 Mitsubishi Cable Ind Ltd 窒化物半導体を用いた発光ダイオード
US8012783B2 (en) * 2005-04-08 2011-09-06 Mitsubishi Chemical Corporation Semiconductor element and method for manufacturing same
JP4297084B2 (ja) * 2005-06-13 2009-07-15 住友電気工業株式会社 発光装置の製造方法および発光装置
JP2007096090A (ja) * 2005-09-29 2007-04-12 Sanyo Electric Co Ltd 半導体発光素子及び半導体発光素子の製造方法
JP2007150259A (ja) * 2005-11-02 2007-06-14 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP4895587B2 (ja) * 2005-11-29 2012-03-14 ローム株式会社 窒化物半導体発光素子
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
TWI288491B (en) * 2006-03-02 2007-10-11 Nat Univ Chung Hsing High extraction efficiency of solid-state light emitting device
CN100438108C (zh) * 2006-06-15 2008-11-26 厦门大学 树叶脉络形大功率氮化镓基发光二极管芯片的p、n电极
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same

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