JP2011505073A5 - - Google Patents

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Publication number
JP2011505073A5
JP2011505073A5 JP2010535212A JP2010535212A JP2011505073A5 JP 2011505073 A5 JP2011505073 A5 JP 2011505073A5 JP 2010535212 A JP2010535212 A JP 2010535212A JP 2010535212 A JP2010535212 A JP 2010535212A JP 2011505073 A5 JP2011505073 A5 JP 2011505073A5
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JP
Japan
Prior art keywords
semiconductor body
optoelectronic semiconductor
electrical contact
recess
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010535212A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011505073A (ja
Filing date
Publication date
Priority claimed from DE102007057756.9A external-priority patent/DE102007057756B4/de
Application filed filed Critical
Publication of JP2011505073A publication Critical patent/JP2011505073A/ja
Publication of JP2011505073A5 publication Critical patent/JP2011505073A5/ja
Pending legal-status Critical Current

Links

JP2010535212A 2007-11-30 2008-11-26 オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法 Pending JP2011505073A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
PCT/DE2008/001957 WO2009068006A2 (de) 2007-11-30 2008-11-26 Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers

Publications (2)

Publication Number Publication Date
JP2011505073A JP2011505073A (ja) 2011-02-17
JP2011505073A5 true JP2011505073A5 (enExample) 2012-01-05

Family

ID=40455567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010535212A Pending JP2011505073A (ja) 2007-11-30 2008-11-26 オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法

Country Status (7)

Country Link
US (1) US20110204322A1 (enExample)
JP (1) JP2011505073A (enExample)
KR (1) KR20100097188A (enExample)
CN (1) CN101878546B (enExample)
DE (1) DE102007057756B4 (enExample)
TW (1) TWI474501B (enExample)
WO (1) WO2009068006A2 (enExample)

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JP5052636B2 (ja) * 2010-03-11 2012-10-17 株式会社東芝 半導体発光素子
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
DE102010032497A1 (de) 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
US8829487B2 (en) * 2011-03-21 2014-09-09 Walsin Lihwa Corporation Light emitting diode and method for manufacturing the same
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

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