KR20100097188A - 광전 반도체 몸체 및 광전 반도체 몸체의 제조 방법 - Google Patents

광전 반도체 몸체 및 광전 반도체 몸체의 제조 방법 Download PDF

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Publication number
KR20100097188A
KR20100097188A KR1020107014175A KR20107014175A KR20100097188A KR 20100097188 A KR20100097188 A KR 20100097188A KR 1020107014175 A KR1020107014175 A KR 1020107014175A KR 20107014175 A KR20107014175 A KR 20107014175A KR 20100097188 A KR20100097188 A KR 20100097188A
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KR
South Korea
Prior art keywords
layer
contact
recess
semiconductor
buffer layer
Prior art date
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Ceased
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KR1020107014175A
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English (en)
Korean (ko)
Inventor
귀도 웨이스
베르톨드 한
울리츠 젠더
안드레아스 웨이마르
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100097188A publication Critical patent/KR20100097188A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
KR1020107014175A 2007-11-30 2008-11-26 광전 반도체 몸체 및 광전 반도체 몸체의 제조 방법 Ceased KR20100097188A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102007057756.9 2007-11-30

Publications (1)

Publication Number Publication Date
KR20100097188A true KR20100097188A (ko) 2010-09-02

Family

ID=40455567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107014175A Ceased KR20100097188A (ko) 2007-11-30 2008-11-26 광전 반도체 몸체 및 광전 반도체 몸체의 제조 방법

Country Status (7)

Country Link
US (1) US20110204322A1 (enExample)
JP (1) JP2011505073A (enExample)
KR (1) KR20100097188A (enExample)
CN (1) CN101878546B (enExample)
DE (1) DE102007057756B4 (enExample)
TW (1) TWI474501B (enExample)
WO (1) WO2009068006A2 (enExample)

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DE102010032497A1 (de) 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
US8829487B2 (en) * 2011-03-21 2014-09-09 Walsin Lihwa Corporation Light emitting diode and method for manufacturing the same
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

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WO2005106972A1 (de) 2004-04-29 2005-11-10 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips
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JP2007150259A (ja) * 2005-11-02 2007-06-14 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP4895587B2 (ja) * 2005-11-29 2012-03-14 ローム株式会社 窒化物半導体発光素子
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
TWI288491B (en) * 2006-03-02 2007-10-11 Nat Univ Chung Hsing High extraction efficiency of solid-state light emitting device
CN100438108C (zh) * 2006-06-15 2008-11-26 厦门大学 树叶脉络形大功率氮化镓基发光二极管芯片的p、n电极
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same

Also Published As

Publication number Publication date
CN101878546B (zh) 2012-05-23
WO2009068006A2 (de) 2009-06-04
TWI474501B (zh) 2015-02-21
DE102007057756B4 (de) 2022-03-10
TW200933936A (en) 2009-08-01
WO2009068006A3 (de) 2009-09-11
US20110204322A1 (en) 2011-08-25
JP2011505073A (ja) 2011-02-17
CN101878546A (zh) 2010-11-03
DE102007057756A1 (de) 2009-06-04

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