WO2009068006A3 - Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers - Google Patents

Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers Download PDF

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Publication number
WO2009068006A3
WO2009068006A3 PCT/DE2008/001957 DE2008001957W WO2009068006A3 WO 2009068006 A3 WO2009068006 A3 WO 2009068006A3 DE 2008001957 W DE2008001957 W DE 2008001957W WO 2009068006 A3 WO2009068006 A3 WO 2009068006A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor body
optoelectronic semiconductor
layer
buffer layer
producing
Prior art date
Application number
PCT/DE2008/001957
Other languages
English (en)
French (fr)
Other versions
WO2009068006A2 (de
Inventor
Guido Weiss
Berthold Hahn
Ulrich Zehnder
Andreas Weimar
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US12/745,683 priority Critical patent/US20110204322A1/en
Priority to CN2008801184236A priority patent/CN101878546B/zh
Priority to JP2010535212A priority patent/JP2011505073A/ja
Publication of WO2009068006A2 publication Critical patent/WO2009068006A2/de
Publication of WO2009068006A3 publication Critical patent/WO2009068006A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Es wird ein optoelektronischer Halbleiterkörper mit einer epitaktischen Halbleiterschichtenfolge (2) auf der Basis von Nitrid-Verbindungshalbleitern angegeben. Die Halbleiterschichtenfolge weist eine Pufferschicht (21), die nominell undotiert oder zumindest teilweise n-leitend dotiert ist, eine aktive Zone (24), die geeignet ist, eine elektromagnetische Strahlung zu emittieren oder zu empfangen, sowie eine zwischen der Pufferschicht und der aktiven Zone angeordnete Kontaktschicht (22) auf, die n-leitend dotiert ist. In der Kontaktschicht ist die n-Dotierstoffkonzentration größer als in der Pufferschicht. In der Halbleiterschichtenfolge ist eine Ausnehmung (3) enthalten, die sich durch die Pufferschicht hindurch erstreckt und in der ein elektrisches Kontaktmaterial (4) angeordnet ist und an die Kontaktschicht angrenzt. Weiterhin wird ein Verfahren angegeben, das geeignet ist, einen derartigen Halbleiterkörper herzustellen.
PCT/DE2008/001957 2007-11-30 2008-11-26 Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers WO2009068006A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/745,683 US20110204322A1 (en) 2007-11-30 2008-11-26 Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body
CN2008801184236A CN101878546B (zh) 2007-11-30 2008-11-26 光电子半导体本体和用于制造光电子半导体本体的方法
JP2010535212A JP2011505073A (ja) 2007-11-30 2008-11-26 オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007057756.9 2007-11-30
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers

Publications (2)

Publication Number Publication Date
WO2009068006A2 WO2009068006A2 (de) 2009-06-04
WO2009068006A3 true WO2009068006A3 (de) 2009-09-11

Family

ID=40455567

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001957 WO2009068006A2 (de) 2007-11-30 2008-11-26 Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers

Country Status (7)

Country Link
US (1) US20110204322A1 (de)
JP (1) JP2011505073A (de)
KR (1) KR20100097188A (de)
CN (1) CN101878546B (de)
DE (1) DE102007057756B4 (de)
TW (1) TWI474501B (de)
WO (1) WO2009068006A2 (de)

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Publication number Priority date Publication date Assignee Title
JP5052636B2 (ja) * 2010-03-11 2012-10-17 株式会社東芝 半導体発光素子
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
DE102010032497A1 (de) * 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
CN102694096A (zh) * 2011-03-21 2012-09-26 华新丽华股份有限公司 发光二极管及其制造方法
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

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US20020117681A1 (en) * 2001-02-23 2002-08-29 Weeks T. Warren Gallium nitride material devices and methods including backside vias

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Also Published As

Publication number Publication date
TW200933936A (en) 2009-08-01
CN101878546A (zh) 2010-11-03
DE102007057756B4 (de) 2022-03-10
US20110204322A1 (en) 2011-08-25
TWI474501B (zh) 2015-02-21
JP2011505073A (ja) 2011-02-17
WO2009068006A2 (de) 2009-06-04
DE102007057756A1 (de) 2009-06-04
CN101878546B (zh) 2012-05-23
KR20100097188A (ko) 2010-09-02

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