WO2007036456A3 - Sic-pn-leistungsdiode - Google Patents

Sic-pn-leistungsdiode Download PDF

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Publication number
WO2007036456A3
WO2007036456A3 PCT/EP2006/066482 EP2006066482W WO2007036456A3 WO 2007036456 A3 WO2007036456 A3 WO 2007036456A3 EP 2006066482 W EP2006066482 W EP 2006066482W WO 2007036456 A3 WO2007036456 A3 WO 2007036456A3
Authority
WO
WIPO (PCT)
Prior art keywords
drift zone
sic
conductivity type
zone
layer
Prior art date
Application number
PCT/EP2006/066482
Other languages
English (en)
French (fr)
Other versions
WO2007036456A2 (de
Inventor
Peter Friedrichs
Dethard Peters
Reinhold Schoerner
Dietrich Stephani
Original Assignee
Siced Elect Dev Gmbh & Co Kg
Peter Friedrichs
Dethard Peters
Reinhold Schoerner
Dietrich Stephani
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siced Elect Dev Gmbh & Co Kg, Peter Friedrichs, Dethard Peters, Reinhold Schoerner, Dietrich Stephani filed Critical Siced Elect Dev Gmbh & Co Kg
Priority to EP06793619A priority Critical patent/EP1946377A2/de
Priority to US12/088,298 priority patent/US7646026B2/en
Publication of WO2007036456A2 publication Critical patent/WO2007036456A2/de
Publication of WO2007036456A3 publication Critical patent/WO2007036456A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

Die Erfindung betrifft eine integrierte vertikale SiC-PN-Leistungsdiode, mit einem hochdotierten ausgebildeten SiC-Halbleiterkörper eines ersten Leitfähigkeitstyps, mit einer niedrig dotierten Driftzone des ersten Leitfähigkeitstyps, die emitterseitig über dem Halbleiterkörper angeordnet ist, mit einer Emitterzone eines zweiten Leitfähigkeitstyps, die auf der Driftzone aufgebracht ist, und mit zumindest einer innerhalb der Driftzone angeordneten dünnen Zwischenschicht des ersten Leitfähigkeitstyps, die eine gegenüber der Driftzone höhere Dotierungskonzentration aufweist und die die Driftzone zumindest in eine erste anodenseitige Driftzonenschicht und zumindest in eine zweite katodenseitige Driftzonenschicht unterteilt. Die Erfindung betrifft ferner eine Schaltungsanordnung mit solchen SiC-PN-Leistungsdioden.
PCT/EP2006/066482 2005-09-29 2006-09-19 Sic-pn-leistungsdiode WO2007036456A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06793619A EP1946377A2 (de) 2005-09-29 2006-09-19 Sic-pn-leistungsdiode
US12/088,298 US7646026B2 (en) 2005-09-29 2006-09-19 SiC-PN power diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005046707.5 2005-09-29
DE102005046707A DE102005046707B3 (de) 2005-09-29 2005-09-29 SiC-PN-Leistungsdiode

Publications (2)

Publication Number Publication Date
WO2007036456A2 WO2007036456A2 (de) 2007-04-05
WO2007036456A3 true WO2007036456A3 (de) 2007-06-21

Family

ID=37900115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/066482 WO2007036456A2 (de) 2005-09-29 2006-09-19 Sic-pn-leistungsdiode

Country Status (5)

Country Link
US (1) US7646026B2 (de)
EP (1) EP1946377A2 (de)
KR (1) KR20080070638A (de)
DE (1) DE102005046707B3 (de)
WO (1) WO2007036456A2 (de)

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EP1775774A4 (de) * 2004-06-11 2008-10-22 Matsushita Electric Ind Co Ltd Power-element
SE532625C2 (sv) * 2007-04-11 2010-03-09 Transic Ab Halvledarkomponent i kiselkarbid
US7687891B2 (en) * 2007-05-14 2010-03-30 Infineon Technologies Ag Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
EP2073274A1 (de) * 2007-12-19 2009-06-24 ABB Technology AG Diode
DE102008036554A1 (de) 2008-08-06 2010-02-11 Endress + Hauser Process Solutions Ag Autarkes Feldgerät oder autarker Funkadapter für ein Feldgerät der Automatisierungstechnik
WO2010137146A1 (ja) * 2009-05-28 2010-12-02 トヨタ自動車株式会社 ダイオードの製造方法、及び、ダイオード
JP5506938B2 (ja) 2010-08-24 2014-05-28 三菱電機株式会社 エピタキシャルウエハ及び半導体装置
JP6026418B2 (ja) * 2010-09-27 2016-11-16 アーベーベー・テヒノロギー・アーゲー バイポーラノンパンチスルー電力半導体デバイス
JP5872327B2 (ja) * 2011-03-10 2016-03-01 株式会社東芝 半導体整流素子
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) * 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US20140284659A1 (en) * 2013-03-21 2014-09-25 Bourns, Inc. Transient Voltage Suppressor, Design and Process
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN108292686B (zh) 2015-12-02 2021-02-12 三菱电机株式会社 碳化硅外延基板及碳化硅半导体装置
DE102016111844A1 (de) 2016-06-28 2017-12-28 Infineon Technologies Ag Leistungshalbleitervorrichtung
DE102017131354A1 (de) * 2017-12-27 2019-06-27 Infineon Technologies Ag Ein Halbleiterbauelement mit breitem Bandabstand und ein Verfahren zum Bilden eines Halbleiterbauelements mit breitem Bandabstand
DE102018100296A1 (de) * 2018-01-09 2019-07-11 TenneT TSO GmbH Gleichspannungs-Netzanbindungssystem
JP7319501B2 (ja) 2019-10-09 2023-08-02 株式会社東芝 基板の製造方法、半導体装置の製造方法、基板及び半導体装置
JP7292175B2 (ja) 2019-10-16 2023-06-16 株式会社東芝 半導体装置
CN110854208B (zh) * 2019-11-28 2021-04-02 电子科技大学 一种含埋层结构的碳化硅PiN二极管
JP7319502B2 (ja) 2020-01-09 2023-08-02 株式会社東芝 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置
JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
CN115472668A (zh) * 2022-05-05 2022-12-13 安世半导体科技(上海)有限公司 半导体器件及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
WO1998016951A1 (en) * 1996-10-14 1998-04-23 Abb Research Ltd. A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
WO1999053549A1 (de) * 1998-04-14 1999-10-21 Infineon Technologies Ag Universal-halbleiterscheibe für hochvolt-halbleiterbauelemente
WO2002099869A1 (en) * 2001-05-25 2002-12-12 Abb Research Limited A method concerning a junction barrier schottky diode, such a diode and use thereof
US6611021B1 (en) * 1999-10-20 2003-08-26 Fuji Electric Co., Ltd. Semiconductor device and the method of manufacturing the same
US20050048701A1 (en) * 2001-02-21 2005-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method for the same
WO2005088729A2 (de) * 2004-03-11 2005-09-22 Siemens Aktiengesellschaft Halbleiterbauelement, insbesondere diode, und zugehöriges herstellungsverfahren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10207522B4 (de) * 2001-02-23 2018-08-02 Fuji Electric Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
JP4539011B2 (ja) * 2002-02-20 2010-09-08 富士電機システムズ株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
WO1998016951A1 (en) * 1996-10-14 1998-04-23 Abb Research Ltd. A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
WO1999053549A1 (de) * 1998-04-14 1999-10-21 Infineon Technologies Ag Universal-halbleiterscheibe für hochvolt-halbleiterbauelemente
US6611021B1 (en) * 1999-10-20 2003-08-26 Fuji Electric Co., Ltd. Semiconductor device and the method of manufacturing the same
US20050048701A1 (en) * 2001-02-21 2005-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method for the same
WO2002099869A1 (en) * 2001-05-25 2002-12-12 Abb Research Limited A method concerning a junction barrier schottky diode, such a diode and use thereof
WO2005088729A2 (de) * 2004-03-11 2005-09-22 Siemens Aktiengesellschaft Halbleiterbauelement, insbesondere diode, und zugehöriges herstellungsverfahren

Also Published As

Publication number Publication date
EP1946377A2 (de) 2008-07-23
US20080217627A1 (en) 2008-09-11
KR20080070638A (ko) 2008-07-30
WO2007036456A2 (de) 2007-04-05
DE102005046707B3 (de) 2007-05-03
US7646026B2 (en) 2010-01-12

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