JP7319502B2 - 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置 - Google Patents
炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置 Download PDFInfo
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- JP7319502B2 JP7319502B2 JP2020002078A JP2020002078A JP7319502B2 JP 7319502 B2 JP7319502 B2 JP 7319502B2 JP 2020002078 A JP2020002078 A JP 2020002078A JP 2020002078 A JP2020002078 A JP 2020002078A JP 7319502 B2 JP7319502 B2 JP 7319502B2
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- 239000000758 substrate Substances 0.000 title claims description 193
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 71
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 title description 42
- 238000000034 method Methods 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005092 sublimation method Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Description
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、第1実施形態に係る炭化珪素基体の製造方法を例示するフローチャート図である。
図2(a)~図2(d)、図3(a)~図3(c)、図4(a)~図4(d)、及び、図5(a)~図5(c)は、第1実施形態に係る炭化珪素基体の製造方法を例示する模式図である。
図2(a)、図3(a)、図4(a)及び図5(a)は、模式的平面図である。図2(b)、図3(b)、図4(b)及び図5(b)は、図2(a)、図3(a)、図4(a)及び図5(a)のそれぞれにおけるB1-B2線断面図に対応する。図2(c)、図3(c)、図4(c)及び図5(c)は、図2(a)、図3(a)、図4(a)及び図5(a)のそれぞれにおけるA1-A2線断面図に対応する。図2(d)及び図4(d)は、平面図である。
これらの図は、第1基体71の熱処理(ステップS120)における基底面転位71Bを例示している。図6(a)は、平面図である。図6(b)は、断面図である。
これらの図は、第1層10を例示している。図7(a)は、平面図である。図7(b)は、断面図である。
図8(a)に示すように、基底面転位10Bが、貫通刃状転位10Tに変化する。貫通刃状転位10Tの深さを深さd1とする。図8(b)に示すように、基底面転位10Bの長さL1は、d1/(sinθ2)で表される。
図9は、第1実施形態に関する作用の例を説明するためのグラフ図である。図9の横軸は、第4角度θ4(図4(d)参照)である。第4角度θ4は、[-1100]方向から[11-20]方向への時計回りの回転角の大きさに対応する。図9の縦軸は、[11-20]方向の基底面転位71Bに働く鏡像力の強さRIF(相対値)である。
第2実施形態は、半導体装置の製造方法に係る。実施形態は、半導体装置の製造方法は、上記の、ステップS110、ステップS130、ステップS140及びステップS150を含む(図1参照)。半導体装置の製造方法は、ステップS120を含んでも良い。または、ステップS110において、ステップS120が実施された後の第1基体71が準備されても良い。実施形態においては、第2層20は、第1層10に含まれる基底面転位10Bと繋がる貫通刃状転位10Tを含む。基底面転位10Bが貫通刃状転位10Tに変化することで、基底面転位10Bの密度を低減できる。
第3実施形態は、炭化珪素基体210(図4(a)~図4(d)参照)に係る。
図4(a)~図4(c)に示すように、炭化珪素基体210は、第1基体71及び第1層10を含む。
第4実施形態は、半導体装置(例えば、半導体装置310)に係る。図5(a)~図5(c)に示すように、半導体装置310は、第1基体71、第1層10及び第2層20を含む。半導体装置310においては、基底面転位の密度を低減できる。高品位の半導体装置が得られる。
図10に示すように、半導体装置120は、第1基体71、第1層10及び第2層20を含む。この例では、半導体装置120は、第3層30、第4層40、第2基体72、第1電極51、第2電極52、第3電極53及び絶縁部61を含む。
図11に示すように、実施形態に係る半導体装置131は、第1基体71、第1層10、第2層20、第3層30、第1電極51及び第2電極52を含む。半導体装置131は、pn接合ダイオードである。
Claims (12)
- 第1基体面を含み炭化珪素を含む第1基体であって、前記第1基体面は、前記第1基体の(0001)面に対して傾斜し、前記第1基体の前記(0001)面と、前記第1基体面と、が交差する第1線分は、前記第1基体の[11-20]方向に沿う、前記第1基体を準備し、
前記第1基体面に炭化珪素を含む第1層を形成し、
前記第1層の一部を除去し、
前記一部の前記除去で露出した前記第1層の第1層面は、前記第1層の(0001)面に対して傾斜し、前記第1層の前記(0001)面と、前記第1層面と、が交差する第2線分は、[-1100]方向に沿い、
前記第1層の前記形成の前に、前記第1基体を熱処理する、炭化珪素基体の製造方法。 - 前記熱処理の温度は、1100℃以上1600℃以下あり、
前記熱処理の時間は、10分以上である、請求項1記載の炭化珪素基体の製造方法。 - 前記熱処理の雰囲気は、アルゴン、ヘリウム、ネオン及び窒素よりなる群から選択された少なくとも1つを含む、請求項1または2に記載の炭化珪素基体の製造方法。
- 前記第1基体面は、前記第1基体の前記(0001)面に対して、<-1100>方向に傾斜する、請求項1~3のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1線分と、前記第1基体の前記[11-20]方向と、の間の第3角度は、±5度以下である、請求項1~3のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1基体の前記(0001)面と、前記第1基体面と、の間の第1角度は、2度以上8度以下である、請求項1~5のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1層面は、前記第1基体の前記(0001)面に対して、<11-20>方向に傾斜する、請求項1~6のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第2線分と、前記第1層の前記[-1100]方向と、の間の第4角度は、±5度以下である、請求項1~6のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1層の前記(0001)面と、前記第1層面と、の間の第2角度θ2は、2度以上8度以下である、請求項1~8のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1層の前記一部の除去の前における、前記第1基体の前記(0001)面に対して垂直な方向に沿う、前記第1層の厚さは、(tanθ2)×L1よりも大きく、
前記L1は、前記第1基体の前記[11-20]方向に沿う、前記第1基体の長さである、請求項9記載の炭化珪素基体の製造方法。 - 前記第1層の形成は、昇華法及び化学気相成長法の少なくともいずれかで前記第1層を形成することを含む、請求項1~10のいずれか1つに記載の炭化珪素基体の製造方法。
- 前記第1層の形成は、前記第1層の少なくとも一部をステップフロー成長により形成することを含む、請求項1~11のいずれか1つに記載の炭化珪素基体の製造方法。
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