SE9602880D0 - Halvledarkomponent medlinjär ström-spännings-kara kteristik - Google Patents

Halvledarkomponent medlinjär ström-spännings-kara kteristik

Info

Publication number
SE9602880D0
SE9602880D0 SE9602880A SE9602880A SE9602880D0 SE 9602880 D0 SE9602880 D0 SE 9602880D0 SE 9602880 A SE9602880 A SE 9602880A SE 9602880 A SE9602880 A SE 9602880A SE 9602880 D0 SE9602880 D0 SE 9602880D0
Authority
SE
Sweden
Prior art keywords
drift region
doped
gate
additionally
linear current
Prior art date
Application number
SE9602880A
Other languages
English (en)
Other versions
SE513284C3 (sv
SE9602880L (sv
SE513284C2 (sv
Inventor
Anders Soederbaerg
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9602880A priority Critical patent/SE513284C2/sv
Publication of SE9602880D0 publication Critical patent/SE9602880D0/sv
Priority to EP97933940A priority patent/EP0958612A2/en
Priority to CA002261719A priority patent/CA2261719A1/en
Priority to CN97198000A priority patent/CN1130776C/zh
Priority to PCT/SE1997/001222 priority patent/WO1998005075A2/en
Priority to JP10508731A priority patent/JP2000516396A/ja
Priority to AU37117/97A priority patent/AU3711797A/en
Priority to KR1019997000636A priority patent/KR100317458B1/ko
Priority to TW086110090A priority patent/TW334604B/zh
Priority to US08/900,110 priority patent/US5886384A/en
Publication of SE513284C3 publication Critical patent/SE513284C3/sv
Publication of SE9602880L publication Critical patent/SE9602880L/sv
Publication of SE513284C2 publication Critical patent/SE513284C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE9602880A 1996-07-26 1996-07-26 Halvledarkomponent med linjär ström-till-spänningskarasterik SE513284C2 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE9602880A SE513284C2 (sv) 1996-07-26 1996-07-26 Halvledarkomponent med linjär ström-till-spänningskarasterik
KR1019997000636A KR100317458B1 (ko) 1996-07-26 1997-07-04 선형 전류-전압특성을 가진 반도체 소자
PCT/SE1997/001222 WO1998005075A2 (en) 1996-07-26 1997-07-04 Semiconductor component with linear current-to-voltage characteristics
CA002261719A CA2261719A1 (en) 1996-07-26 1997-07-04 Semiconductor component with linear current-to-voltage characteristics
CN97198000A CN1130776C (zh) 1996-07-26 1997-07-04 具有线性电流电压特性的半导体元件
EP97933940A EP0958612A2 (en) 1996-07-26 1997-07-04 Semiconductor component with linear current-to-voltage characteristics
JP10508731A JP2000516396A (ja) 1996-07-26 1997-07-04 線形な電流・電圧特性を備えた半導体部品
AU37117/97A AU3711797A (en) 1996-07-26 1997-07-04 Semiconductor component with linear current-to-voltage characteristics
TW086110090A TW334604B (en) 1996-07-26 1997-07-16 Semiconductor component with linear current-to-voltage characteristics
US08/900,110 US5886384A (en) 1996-07-26 1997-07-25 Semiconductor component with linear current to voltage characteristics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9602880A SE513284C2 (sv) 1996-07-26 1996-07-26 Halvledarkomponent med linjär ström-till-spänningskarasterik

Publications (4)

Publication Number Publication Date
SE9602880D0 true SE9602880D0 (sv) 1996-07-26
SE513284C3 SE513284C3 (sv) 1998-01-27
SE9602880L SE9602880L (sv) 1998-01-27
SE513284C2 SE513284C2 (sv) 2000-08-14

Family

ID=20403484

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9602880A SE513284C2 (sv) 1996-07-26 1996-07-26 Halvledarkomponent med linjär ström-till-spänningskarasterik

Country Status (10)

Country Link
US (1) US5886384A (sv)
EP (1) EP0958612A2 (sv)
JP (1) JP2000516396A (sv)
KR (1) KR100317458B1 (sv)
CN (1) CN1130776C (sv)
AU (1) AU3711797A (sv)
CA (1) CA2261719A1 (sv)
SE (1) SE513284C2 (sv)
TW (1) TW334604B (sv)
WO (1) WO1998005075A2 (sv)

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JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6028337A (en) * 1998-11-06 2000-02-22 Philips North America Corporation Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region
SE9901575L (sv) * 1999-05-03 2000-11-04 Eklund Klas Haakan Halvledarelement
JP2001352070A (ja) * 2000-04-07 2001-12-21 Denso Corp 半導体装置およびその製造方法
GB0314390D0 (en) * 2003-06-20 2003-07-23 Koninkl Philips Electronics Nv Trench field effect transistor structure
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
CN100369264C (zh) * 2005-08-26 2008-02-13 东南大学 三维多栅高压n型横向双扩散金属氧化物半导体管
CN100369265C (zh) * 2005-08-26 2008-02-13 东南大学 三维多栅高压p型横向双扩散金属氧化物半导体管
DE102005045910B4 (de) * 2005-09-26 2010-11-11 Infineon Technologies Austria Ag Laterales SOI-Bauelement mit einem verringerten Einschaltwiderstand
US7531888B2 (en) * 2006-11-30 2009-05-12 Fairchild Semiconductor Corporation Integrated latch-up free insulated gate bipolar transistor
EP1965437A1 (en) * 2007-02-28 2008-09-03 K.N. Toosi University of Technology Nano-scale transistor device with large current handling capability
KR101019406B1 (ko) 2008-09-10 2011-03-07 주식회사 동부하이텍 Ｌｄｍｏｓ 소자 제조 방법
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
JP2010278188A (ja) * 2009-05-28 2010-12-09 Renesas Electronics Corp 半導体集積回路装置
US8236640B2 (en) * 2009-12-18 2012-08-07 Intel Corporation Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
CN102403321A (zh) * 2011-09-30 2012-04-04 上海新傲科技股份有限公司 半导体装置及制备方法
KR102016986B1 (ko) * 2013-01-25 2019-09-02 삼성전자주식회사 엘디모스 트랜지스터 기반의 다이오드 및 이를 포함하는 정전기 방전 보호 회로
CN103887332A (zh) * 2013-10-15 2014-06-25 杭州恩能科技有限公司 一种新型功率半导体器件
CN104795438B (zh) * 2015-04-10 2017-07-28 电子科技大学 一种能抑制负阻效应的sa‑ligbt
CN105977288B (zh) * 2016-05-11 2020-05-22 电子科技大学 具有超势垒集电极结构的ligbt器件及其制造方法
CN113690310A (zh) * 2021-07-14 2021-11-23 广东美的白色家电技术创新中心有限公司 Ligbt、制备方法、智能功率模块、驱动电路及电器

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EP0205635A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with bipolar on-state
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
DD258498A1 (de) * 1987-03-16 1988-07-20 Ilmenau Tech Hochschule Gategesteuertes hochspannungsbauelement mit grosser stromergiebigkeit
SE460448B (sv) * 1988-02-29 1989-10-09 Asea Brown Boveri Dubbelriktad mos-switch
EP0371785B1 (en) * 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateral conductivity modulated MOSFET
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US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
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US5710451A (en) * 1996-04-10 1998-01-20 Philips Electronics North America Corporation High-voltage lateral MOSFET SOI device having a semiconductor linkup region

Also Published As

Publication number Publication date
JP2000516396A (ja) 2000-12-05
WO1998005075A3 (en) 1998-03-05
KR20000029577A (ko) 2000-05-25
US5886384A (en) 1999-03-23
CA2261719A1 (en) 1998-02-05
KR100317458B1 (ko) 2001-12-24
CN1130776C (zh) 2003-12-10
CN1231066A (zh) 1999-10-06
AU3711797A (en) 1998-02-20
SE9602880L (sv) 1998-01-27
WO1998005075A2 (en) 1998-02-05
TW334604B (en) 1998-06-21
SE513284C2 (sv) 2000-08-14
EP0958612A2 (en) 1999-11-24

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