ATE520152T1 - Leistungshalbleiterbauelement - Google Patents

Leistungshalbleiterbauelement

Info

Publication number
ATE520152T1
ATE520152T1 AT07820844T AT07820844T ATE520152T1 AT E520152 T1 ATE520152 T1 AT E520152T1 AT 07820844 T AT07820844 T AT 07820844T AT 07820844 T AT07820844 T AT 07820844T AT E520152 T1 ATE520152 T1 AT E520152T1
Authority
AT
Austria
Prior art keywords
layer
zone
conductivity type
main side
power semiconductor
Prior art date
Application number
AT07820844T
Other languages
English (en)
Inventor
Arnost Kopta
Original Assignee
Abb Technology Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Technology Ag filed Critical Abb Technology Ag
Application granted granted Critical
Publication of ATE520152T1 publication Critical patent/ATE520152T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
AT07820844T 2006-10-05 2007-10-02 Leistungshalbleiterbauelement ATE520152T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06405423A EP1909332A1 (de) 2006-10-05 2006-10-05 Leistungshalbleiteranordnung
PCT/EP2007/060462 WO2008040733A1 (en) 2006-10-05 2007-10-02 Power semiconductor device

Publications (1)

Publication Number Publication Date
ATE520152T1 true ATE520152T1 (de) 2011-08-15

Family

ID=37728189

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07820844T ATE520152T1 (de) 2006-10-05 2007-10-02 Leistungshalbleiterbauelement

Country Status (7)

Country Link
US (1) US9048340B2 (de)
EP (2) EP1909332A1 (de)
JP (1) JP5231426B2 (de)
CN (1) CN101558500B (de)
AT (1) ATE520152T1 (de)
ES (1) ES2370665T3 (de)
WO (1) WO2008040733A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
EP2339613B1 (de) 2009-12-22 2015-08-19 ABB Technology AG Leistungshalbleiterelement und Herstellungsverfahren dafür
EP2341528A1 (de) 2010-01-05 2011-07-06 ABB Technology AG Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
JP6301776B2 (ja) * 2010-05-26 2018-03-28 三菱電機株式会社 半導体装置
CN102934231B (zh) * 2010-06-17 2016-02-17 Abb技术有限公司 功率半导体器件
JP5321669B2 (ja) * 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
CN104969360B (zh) 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
DE102016206922A1 (de) * 2015-05-08 2016-11-10 Semiconductor Energy Laboratory Co., Ltd. Touchscreen
CN106684118A (zh) * 2016-02-25 2017-05-17 宗仁科技(平潭)有限公司 开关型功率半导体器件及其制作方法
JP6830767B2 (ja) * 2016-06-14 2021-02-17 株式会社デンソー 半導体装置
US20210391481A1 (en) 2018-11-20 2021-12-16 Abb Power Grids Switzerland Ag Power Semiconductor Device and Shadow-Mask Free Method for Producing Such Device
CN113659014B (zh) * 2021-10-20 2022-01-18 四川洪芯微科技有限公司 一种含有阴极短接槽栅结构的功率二极管

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1490051A (fr) * 1965-08-18 1967-07-28 Ass Elect Ind Perfectionnements aux dispositifs redresseurs à semiconducteurs
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
JPH0266977A (ja) * 1988-09-01 1990-03-07 Fuji Electric Co Ltd 半導体ダイオード
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JPH0936388A (ja) * 1995-07-20 1997-02-07 Mitsubishi Electric Corp 半導体装置
JP3444081B2 (ja) * 1996-02-28 2003-09-08 株式会社日立製作所 ダイオード及び電力変換装置
DE19804580C2 (de) 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
DE10330571B8 (de) 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
EP1909332A1 (de) 2008-04-09
JP2010506392A (ja) 2010-02-25
CN101558500A (zh) 2009-10-14
US9048340B2 (en) 2015-06-02
EP2070125B1 (de) 2011-08-10
US20090200574A1 (en) 2009-08-13
JP5231426B2 (ja) 2013-07-10
CN101558500B (zh) 2012-06-27
EP2070125A1 (de) 2009-06-17
WO2008040733A1 (en) 2008-04-10
ES2370665T3 (es) 2011-12-21

Similar Documents

Publication Publication Date Title
ATE520152T1 (de) Leistungshalbleiterbauelement
TW200741968A (en) Butted contact structure and method for forming the same
EP2209142A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
JP2010157636A5 (de)
EP2442374A3 (de) Lichtemittierende Vorrichtung und lichtemittierende Vorrichtungsverpackung dafür
EP2772940A3 (de) Leistungstransistor mit Heterostruktur mit AlSiN-Passivierungsschicht
EP2249392A3 (de) Rückwärtsleitende Halbleitervorrichtung
ATE545155T1 (de) Leistungshalbleiterbauelement
EP2378572A3 (de) Elektrodenanordnung für eine lichtemittierende Vorrichtung
JP2002319675A5 (de)
WO2008057438A3 (en) Power switching semiconductor devices including rectifying junction-shunts
WO2007036456A3 (de) Sic-pn-leistungsdiode
EP2439793A3 (de) Lichtemittierende Vorrichtung und Beleuchtungsinstrument damit
TW200802960A (en) Interconnects for semiconductor light emitting devices
WO2009078069A1 (ja) 半導体装置
EP2533308A3 (de) Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
TW200715555A (en) Semiconductor device with a conduction enhancement layer
MY151538A (en) Light-emitting device with improved electrode structures
JP2017212425A5 (de)
WO2009057311A1 (ja) 半導体発光素子およびそれを用いた半導体発光装置
WO2011157814A3 (en) Power semiconductor device
EP2388834A3 (de) Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem
WO2011093953A3 (en) High voltage scrmos in bicmos process technologies
WO2008155379A3 (fr) Transistor a effet de champ a contacts electriques alternes
EP2426742A3 (de) Elektrodenanordnung für eine Licht emittierende Diode

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties