ATE520152T1 - Leistungshalbleiterbauelement - Google Patents
LeistungshalbleiterbauelementInfo
- Publication number
- ATE520152T1 ATE520152T1 AT07820844T AT07820844T ATE520152T1 AT E520152 T1 ATE520152 T1 AT E520152T1 AT 07820844 T AT07820844 T AT 07820844T AT 07820844 T AT07820844 T AT 07820844T AT E520152 T1 ATE520152 T1 AT E520152T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- zone
- conductivity type
- main side
- power semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06405423A EP1909332A1 (de) | 2006-10-05 | 2006-10-05 | Leistungshalbleiteranordnung |
| PCT/EP2007/060462 WO2008040733A1 (en) | 2006-10-05 | 2007-10-02 | Power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE520152T1 true ATE520152T1 (de) | 2011-08-15 |
Family
ID=37728189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07820844T ATE520152T1 (de) | 2006-10-05 | 2007-10-02 | Leistungshalbleiterbauelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9048340B2 (de) |
| EP (2) | EP1909332A1 (de) |
| JP (1) | JP5231426B2 (de) |
| CN (1) | CN101558500B (de) |
| AT (1) | ATE520152T1 (de) |
| ES (1) | ES2370665T3 (de) |
| WO (1) | WO2008040733A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4743447B2 (ja) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
| EP2339613B1 (de) | 2009-12-22 | 2015-08-19 | ABB Technology AG | Leistungshalbleiterelement und Herstellungsverfahren dafür |
| EP2341528A1 (de) | 2010-01-05 | 2011-07-06 | ABB Technology AG | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
| JP6301776B2 (ja) * | 2010-05-26 | 2018-03-28 | 三菱電機株式会社 | 半導体装置 |
| GB2496067B (en) * | 2010-06-17 | 2014-12-24 | Abb Technology Ag | Power semiconductor device |
| JP5321669B2 (ja) * | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
| EP2980856B1 (de) | 2013-03-25 | 2020-07-22 | Fuji Electric Co., Ltd. | Halbleiterbauelement und verfahren zu dessen herstellung |
| DE102016206922A1 (de) * | 2015-05-08 | 2016-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Touchscreen |
| CN206532784U (zh) * | 2016-02-25 | 2017-09-29 | 宗仁科技(平潭)有限公司 | 开关型功率半导体器件 |
| JP6830767B2 (ja) * | 2016-06-14 | 2021-02-17 | 株式会社デンソー | 半導体装置 |
| CN113056812B (zh) | 2018-11-20 | 2022-12-20 | 日立能源瑞士股份公司 | 功率半导体器件和用于生产这种器件的无荫罩的方法 |
| CN113659014B (zh) * | 2021-10-20 | 2022-01-18 | 四川洪芯微科技有限公司 | 一种含有阴极短接槽栅结构的功率二极管 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1490051A (fr) * | 1965-08-18 | 1967-07-28 | Ass Elect Ind | Perfectionnements aux dispositifs redresseurs à semiconducteurs |
| CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
| JPH0266977A (ja) * | 1988-09-01 | 1990-03-07 | Fuji Electric Co Ltd | 半導体ダイオード |
| JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
| JPH0936388A (ja) * | 1995-07-20 | 1997-02-07 | Mitsubishi Electric Corp | 半導体装置 |
| JP3444081B2 (ja) * | 1996-02-28 | 2003-09-08 | 株式会社日立製作所 | ダイオード及び電力変換装置 |
| DE19804580C2 (de) | 1998-02-05 | 2002-03-14 | Infineon Technologies Ag | Leistungsdiode in Halbleitermaterial |
| DE10330571B8 (de) * | 2003-07-07 | 2007-03-08 | Infineon Technologies Ag | Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür |
| JP5011748B2 (ja) * | 2006-02-24 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
-
2006
- 2006-10-05 EP EP06405423A patent/EP1909332A1/de not_active Withdrawn
-
2007
- 2007-10-02 ES ES07820844T patent/ES2370665T3/es active Active
- 2007-10-02 WO PCT/EP2007/060462 patent/WO2008040733A1/en active Application Filing
- 2007-10-02 EP EP07820844A patent/EP2070125B1/de active Active
- 2007-10-02 AT AT07820844T patent/ATE520152T1/de not_active IP Right Cessation
- 2007-10-02 CN CN200780045147.0A patent/CN101558500B/zh active Active
- 2007-10-02 JP JP2009530874A patent/JP5231426B2/ja active Active
-
2009
- 2009-04-03 US US12/417,774 patent/US9048340B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2370665T3 (es) | 2011-12-21 |
| EP1909332A1 (de) | 2008-04-09 |
| CN101558500A (zh) | 2009-10-14 |
| EP2070125B1 (de) | 2011-08-10 |
| US20090200574A1 (en) | 2009-08-13 |
| WO2008040733A1 (en) | 2008-04-10 |
| US9048340B2 (en) | 2015-06-02 |
| JP5231426B2 (ja) | 2013-07-10 |
| EP2070125A1 (de) | 2009-06-17 |
| CN101558500B (zh) | 2012-06-27 |
| JP2010506392A (ja) | 2010-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |