DE10330571B8 - Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür - Google Patents

Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür Download PDF

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Publication number
DE10330571B8
DE10330571B8 DE10330571A DE10330571A DE10330571B8 DE 10330571 B8 DE10330571 B8 DE 10330571B8 DE 10330571 A DE10330571 A DE 10330571A DE 10330571 A DE10330571 A DE 10330571A DE 10330571 B8 DE10330571 B8 DE 10330571B8
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DE
Germany
Prior art keywords
manufacturing
semiconductor devices
power semiconductor
edge area
method therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10330571A
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English (en)
Other versions
DE10330571A1 (de
DE10330571B4 (de
Inventor
Anton Dr. Mauder
Holger Rüthing
Gerhard Dr. Miller
Hans-Joachim Dr. Schulze
Josef Georg Bauer
Elmar Dr. Falck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
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Infineon Technologies AG
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Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10330571A priority Critical patent/DE10330571B8/de
Priority to US10/886,007 priority patent/US7233031B2/en
Publication of DE10330571A1 publication Critical patent/DE10330571A1/de
Application granted granted Critical
Publication of DE10330571B4 publication Critical patent/DE10330571B4/de
Publication of DE10330571B8 publication Critical patent/DE10330571B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10330571A 2003-07-07 2003-07-07 Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür Expired - Fee Related DE10330571B8 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10330571A DE10330571B8 (de) 2003-07-07 2003-07-07 Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US10/886,007 US7233031B2 (en) 2003-07-07 2004-07-07 Vertical power semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10330571A DE10330571B8 (de) 2003-07-07 2003-07-07 Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür

Publications (3)

Publication Number Publication Date
DE10330571A1 DE10330571A1 (de) 2005-02-17
DE10330571B4 DE10330571B4 (de) 2006-08-17
DE10330571B8 true DE10330571B8 (de) 2007-03-08

Family

ID=34071583

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10330571A Expired - Fee Related DE10330571B8 (de) 2003-07-07 2003-07-07 Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür

Country Status (2)

Country Link
US (1) US7233031B2 (de)
DE (1) DE10330571B8 (de)

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DE102005021302A1 (de) * 2005-05-09 2006-11-23 Infineon Technologies Ag Verfahren zur Einstellung der Ladungsträgerlebensdauer in einem Halbleiterkörper
DE102005063559B4 (de) * 2005-11-09 2016-06-02 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
DE102005053487B4 (de) 2005-11-09 2011-06-09 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
DE102005056426B4 (de) 2005-11-28 2012-03-15 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
EP1909332A1 (de) 2006-10-05 2008-04-09 ABB Technology AG Leistungshalbleiteranordnung
JP5036327B2 (ja) 2007-01-23 2012-09-26 三菱電機株式会社 半導体装置及びその製造方法
JP5286706B2 (ja) * 2007-07-10 2013-09-11 三菱電機株式会社 電力用半導体装置とその製造方法
TWI450401B (zh) * 2007-08-28 2014-08-21 Mosel Vitelic Inc 太陽能電池及其製造方法
JP5194273B2 (ja) * 2007-09-20 2013-05-08 三菱電機株式会社 半導体装置
US7842590B2 (en) 2008-04-28 2010-11-30 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate including laser annealing
US8159022B2 (en) 2008-09-30 2012-04-17 Infineon Technologies Austria Ag Robust semiconductor device with an emitter zone and a field stop zone
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
US8361893B2 (en) 2011-03-30 2013-01-29 Infineon Technologies Ag Semiconductor device and substrate with chalcogen doped region
DE102011076662A1 (de) * 2011-05-30 2012-12-06 Robert Bosch Gmbh Halbleiterbauelement und entsprechendes Herstellungsverfahren
US9041051B2 (en) 2011-07-05 2015-05-26 Mitsubishi Electric Corporation Semiconductor device
KR101923127B1 (ko) 2011-09-08 2018-11-28 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조방법
US8809902B2 (en) 2011-10-17 2014-08-19 Infineon Technologies Austria Ag Power semiconductor diode, IGBT, and method for manufacturing thereof
KR101604234B1 (ko) 2012-03-05 2016-03-17 미쓰비시덴키 가부시키가이샤 반도체장치
US8772126B2 (en) 2012-08-10 2014-07-08 Infineon Technologies Ag Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device
US9029944B2 (en) 2013-02-18 2015-05-12 Infineon Technologies Austria Ag Super junction semiconductor device comprising implanted zones
US8975136B2 (en) 2013-02-18 2015-03-10 Infineon Technologies Austria Ag Manufacturing a super junction semiconductor device
JP5843801B2 (ja) 2013-03-19 2016-01-13 株式会社東芝 情報処理装置およびデバッグ方法
JP6101183B2 (ja) 2013-06-20 2017-03-22 株式会社東芝 半導体装置
US9147727B2 (en) 2013-09-30 2015-09-29 Infineon Technologies Ag Semiconductor device and method for forming a semiconductor device
US9082629B2 (en) * 2013-09-30 2015-07-14 Infineon Technologies Ag Semiconductor device and method for forming a semiconductor device
US9123828B2 (en) 2013-11-14 2015-09-01 Infineon Technologies Ag Semiconductor device and method for forming a semiconductor device
US9385222B2 (en) 2014-02-14 2016-07-05 Infineon Technologies Ag Semiconductor device with insert structure at a rear side and method of manufacturing
JP2016035989A (ja) 2014-08-04 2016-03-17 株式会社東芝 半導体装置
CN104143568A (zh) * 2014-08-15 2014-11-12 无锡新洁能股份有限公司 具有终端结构的场截止型igbt器件及其制造方法
JP6987015B2 (ja) * 2018-04-26 2021-12-22 三菱電機株式会社 半導体装置
DE102018111939B4 (de) 2018-05-17 2019-12-05 Infineon Technologies Ag Leistungshalbleiterbauelement
CN109671771B (zh) * 2018-11-19 2022-04-01 全球能源互联网研究院有限公司 Igbt芯片的背面结构、igbt芯片结构及制备方法
DE102022100969A1 (de) 2022-01-17 2023-07-20 Infineon Technologies Ag Halbleiterchip, chipsystem, verfahren zum herstellen eines halbleiterchips und verfahren zum herstellen eines chipsystems

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EP0419898A2 (de) * 1989-09-28 1991-04-03 Siemens Aktiengesellschaft Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements
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Publication number Priority date Publication date Assignee Title
DE2738152A1 (de) * 1977-02-28 1978-08-31 Electric Power Res Inst Festkoerperbauelement und verfahren zu seiner herstellung
EP0419898A2 (de) * 1989-09-28 1991-04-03 Siemens Aktiengesellschaft Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements
DE3932490A1 (de) * 1989-09-28 1991-04-11 Siemens Ag Thyristor mit grosser sperrfaehigkeit in blockierrichtung
DE4313170A1 (de) * 1993-04-22 1994-10-27 Abb Management Ag Leistungshalbleiterbauelement
DE4410461C1 (de) * 1994-03-25 1995-06-01 Siemens Ag Halbleiterbauelement mit anodenseitiger Getterung
DE19611689A1 (de) * 1995-07-20 1997-01-23 Mitsubishi Electric Corp Halbleiterbauelement
DE19804580A1 (de) * 1998-02-05 1999-08-19 Siemens Ag Leistungshalbleiterdiode

Also Published As

Publication number Publication date
US7233031B2 (en) 2007-06-19
US20050035405A1 (en) 2005-02-17
DE10330571A1 (de) 2005-02-17
DE10330571B4 (de) 2006-08-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: RUETHING, HOLGER, 80639 MUENCHEN, DE

Inventor name: FALCK, ELMAR, DR., 86415 MERING, DE

Inventor name: MAUDER, ANTON, DR., 83059 KOLBERMOOR, DE

Inventor name: MILLER, GERHARD, DR., 86929 PENZING, DE

Inventor name: SCHULZE, HANS-JOACHIM, DR., 85521 OTTOBRUNN, DE

Inventor name: BAUER, JOSEF GEORG, 85229 MARKT INDERSDORF, DE

8396 Reprint of erroneous front page
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee