DE602005009333D1 - Halbleiterbauelement und verfahren mit nanoröhren-kontakten - Google Patents

Halbleiterbauelement und verfahren mit nanoröhren-kontakten

Info

Publication number
DE602005009333D1
DE602005009333D1 DE602005009333T DE602005009333T DE602005009333D1 DE 602005009333 D1 DE602005009333 D1 DE 602005009333D1 DE 602005009333 T DE602005009333 T DE 602005009333T DE 602005009333 T DE602005009333 T DE 602005009333T DE 602005009333 D1 DE602005009333 D1 DE 602005009333D1
Authority
DE
Germany
Prior art keywords
semiconductor element
nanotube contacts
nanotube
contacts
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005009333T
Other languages
English (en)
Inventor
Andrew Gabriel Rinzler
Stepehen J Pearton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Florida
University of Florida Research Foundation Inc
Original Assignee
University of Florida
University of Florida Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Florida, University of Florida Research Foundation Inc filed Critical University of Florida
Publication of DE602005009333D1 publication Critical patent/DE602005009333D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
DE602005009333T 2004-02-20 2005-02-22 Halbleiterbauelement und verfahren mit nanoröhren-kontakten Active DE602005009333D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54648304P 2004-02-20 2004-02-20
PCT/US2005/005575 WO2005083751A2 (en) 2004-02-20 2005-02-22 Semiconductor device and method using nanotube contacts

Publications (1)

Publication Number Publication Date
DE602005009333D1 true DE602005009333D1 (de) 2008-10-09

Family

ID=34910778

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005009333T Active DE602005009333D1 (de) 2004-02-20 2005-02-22 Halbleiterbauelement und verfahren mit nanoröhren-kontakten

Country Status (6)

Country Link
US (1) US8168965B2 (de)
EP (1) EP1719155B1 (de)
JP (1) JP5021321B2 (de)
KR (1) KR101216124B1 (de)
DE (1) DE602005009333D1 (de)
WO (1) WO2005083751A2 (de)

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CN101437663B (zh) 2004-11-09 2013-06-19 得克萨斯大学体系董事会 纳米纤维带和板以及加捻和无捻纳米纤维纱线的制造和应用
KR100640661B1 (ko) * 2005-08-05 2006-11-01 삼성전자주식회사 ｐ형 광대역 밴드 갭 화합물 반도체층에의 저저항 접촉콘택을 가지는 반도체 소자 및 제조 방법
CN100550446C (zh) * 2005-08-19 2009-10-14 浦项工科大学 以传导纳米棒作为透明电极的发光装置
US7754964B2 (en) 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
EP1917557A4 (de) 2005-08-24 2015-07-22 Trustees Boston College Vorrichtung und verfahren zur sonnenenergieumwandlung unter verwendung nanoskaliger cometallstrukturen
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
KR100691276B1 (ko) * 2005-08-25 2007-03-12 삼성전기주식회사 나노와이어 발광 소자 및 제조방법
JP2009509358A (ja) * 2005-09-21 2009-03-05 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド パターン化導電性薄膜を形成するための低温法およびそれに由来するパターン化物品
DE102007001743A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen
EP1906496B1 (de) * 2006-09-29 2010-01-06 OSRAM Opto Semiconductors GmbH Halbleiterlaser und Verfahren zur Herstellung eines solchen
DE102006049241B4 (de) * 2006-10-18 2011-04-21 Bruker Daltonik Gmbh Ionenquelle für Elektronentransfer-Dissoziation und Deprotonierung
US8093580B2 (en) 2006-11-22 2012-01-10 Nec Corporation Semiconductor device and method of manufacturing the same
KR100872281B1 (ko) * 2006-12-15 2008-12-05 삼성전기주식회사 나노와이어 구조체를 이용한 반도체 발광소자 및 그제조방법
CA2698093A1 (en) * 2007-08-29 2009-03-12 Northwestern University Transparent electrical conductors prepared from sorted carbon nanotubes and methods of preparing same
CN101409961B (zh) * 2007-10-10 2010-06-16 清华大学 面热光源,其制备方法及应用其加热物体的方法
US8946848B2 (en) * 2008-06-05 2015-02-03 Omnivision Technologies, Inc. Apparatus and method for image sensor with carbon nanotube based transparent conductive coating
CN101752477A (zh) * 2008-11-28 2010-06-23 清华大学 发光二极管
TWI495161B (zh) * 2008-12-26 2015-08-01 Hon Hai Prec Ind Co Ltd 發光二極體
US8273486B2 (en) 2009-01-30 2012-09-25 Honeywell International, Inc. Protecting a PEM fuel cell catalyst against carbon monoxide poisoning
CN101820036B (zh) * 2009-02-27 2013-08-28 清华大学 一种发光二极管的制备方法
CA2759947A1 (en) 2009-04-30 2010-11-04 Andrew Gabriel Rinzler Single wall carbon nanotube based air cathodes
KR101047721B1 (ko) * 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR20120003775A (ko) * 2010-07-05 2012-01-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
RU2013132367A (ru) 2010-12-17 2015-01-27 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Окисление и генерирование водорода на углеродных пленках
FR2972077B1 (fr) * 2011-02-24 2013-08-30 Thales Sa Composant electronique, procede de fabrication et utilisation de graphene dans un composant electronique
SG193937A1 (en) 2011-04-04 2013-11-29 Univ Florida Nanotube dispersants and dispersant free nanotube films therefrom
CN102760802B (zh) * 2011-04-29 2015-03-11 清华大学 发光二极管
CN102760797B (zh) * 2011-04-29 2015-04-01 清华大学 发光二极管
CN102760799B (zh) * 2011-04-29 2015-01-21 清华大学 发光二极管的制备方法
CN102244162B (zh) * 2011-07-14 2013-03-13 北京燕园中镓半导体工程研发中心有限公司 一种发光二极管的制备方法
KR20130101297A (ko) * 2012-03-05 2013-09-13 삼성전자주식회사 반도체 발광소자
KR101908546B1 (ko) * 2012-04-27 2018-10-17 엘지이노텍 주식회사 발광소자
KR101321353B1 (ko) * 2012-05-14 2013-10-23 고려대학교 산학협력단 투명 전극 형성 방법 및 이를 이용하여 제조된 반도체 장치
CN105764838B (zh) 2013-11-20 2019-03-01 佛罗里达大学研究基金会有限公司 含碳材料上的二氧化碳还原
CN104009141B (zh) * 2014-05-24 2017-10-13 北京工业大学 碳纳米管银纳米线复合电流扩展层发光二极管及其制作方法
JP2018534760A (ja) 2015-09-11 2018-11-22 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. 縦型電界効果トランジスタ
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CN110323668B (zh) * 2019-07-05 2020-12-11 清华大学 一种红外窄带辐射器
CN112786755B (zh) * 2019-11-08 2023-03-17 清华大学 发光二极管

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Also Published As

Publication number Publication date
US20050199894A1 (en) 2005-09-15
JP5021321B2 (ja) 2012-09-05
US8168965B2 (en) 2012-05-01
EP1719155B1 (de) 2008-08-27
KR101216124B1 (ko) 2012-12-27
JP2007523495A (ja) 2007-08-16
KR20070026389A (ko) 2007-03-08
WO2005083751A2 (en) 2005-09-09
WO2005083751A3 (en) 2007-03-22
EP1719155A2 (de) 2006-11-08

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