JP7187620B1 - SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 - Google Patents
SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 Download PDFInfo
- Publication number
- JP7187620B1 JP7187620B1 JP2021115760A JP2021115760A JP7187620B1 JP 7187620 B1 JP7187620 B1 JP 7187620B1 JP 2021115760 A JP2021115760 A JP 2021115760A JP 2021115760 A JP2021115760 A JP 2021115760A JP 7187620 B1 JP7187620 B1 JP 7187620B1
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sic
- nitrogen concentration
- less
- sic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 60
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 101
- 229910010271 silicon carbide Inorganic materials 0.000 description 99
- 235000012431 wafers Nutrition 0.000 description 27
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 19
- 238000005259 measurement Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
に関する。
窒素濃度が6.0×1018cm-3以上1.5×1019cm-3以下の範囲内であるSiC基板を準備した。SiC基板のサイズは6インチとした。当該SiC基板上に、エピタキシャル層として第1層、第2層、第3層を順に積層した。第1層の窒素濃度は1.0×1018cm-3とした。第2層の窒素濃度は3.5×1018cm-3とした。第3層の窒素濃度は1.0×1016cm-3とした。
比較例1は、第2層の窒素濃度を6.5×1018cm-3とした点のみが実施例1と異なる。その他の条件を実施例1と同一として、9カ所の測定点p1~p9のそれぞれで、エピタキシャル層の膜厚をFT-IR測定した。
窒素濃度が約7.0×1018cm-3のSiCインゴットからSiC基板を切り出した。当該SiC基板上に、エピタキシャル層として第1層、第2層、第3層を順に積層した。第1層の窒素濃度は1.0×1018cm-3とした。第2層の窒素濃度は3.7×1018cm-3とした。第3層の窒素濃度は1.0×1016cm-3とした。そして、測定点p1におけるエピタキシャル層の総厚をFT-IRで測定した。
実施例3は、窒素濃度が約7.5×1018cm-3のSiCインゴットからSiC基板を切り出した点が実施例2と異なる。SiC基板は6枚取り出し、それぞれのSiC基板上にエピタキシャル層を成膜した。それぞれのエピタキシャル層の構成は、実施例2と同じとした。そして、測定点p1におけるエピタキシャル層の総厚をFT-IRで測定した。
実施例4は、窒素濃度が約6.5×1018cm-3の別のSiCインゴットからSiC基板を切り出した点が実施例2と異なる。SiC基板上にエピタキシャル層を成膜した。エピタキシャル層の構成は、実施例2と同じとした。そして、測定点p1におけるエピタキシャル層の総厚をFT-IRで測定した。
比較例2は、窒素濃度が約5.7×1018cm-3のSiCインゴットからSiC基板を切り出した点が実施例2と異なる。SiC基板は2枚取り出し、それぞれのSiC基板上にエピタキシャル層を成膜した。それぞれのエピタキシャル層の構成は、実施例2と同じとした。そして、測定点p1におけるエピタキシャル層の総厚をFT-IRで測定した。
比較例3は、窒素濃度が約5.5×1018cm-3のSiCインゴットからSiC基板を切り出した点が実施例2と異なる。SiC基板は4枚取り出し、それぞれのSiC基板上にエピタキシャル層を成膜した。それぞれのエピタキシャル層の構成は、実施例2と同じとした。そして、測定点p1におけるエピタキシャル層の総厚をFT-IRで測定した。
(「実測膜厚」-「設定膜厚」)/「設定膜厚」×100 (%)
Claims (4)
- SiC基板と、前記SiC基板上に積層されたSiCエピタキシャル層と、を備え、
前記SiCエピタキシャル層は、前記SiC基板側から順に第1層、第2層、第3層を有し、
前記SiC基板の窒素濃度は、6.0×1018cm-3以上1.5×1019cm-3以下であり、
前記第1層の窒素濃度は、1.0×1017cm-3以上1.5×1018cm-3以下であり、
前記第2層の窒素濃度は、1.0×1018cm-3以上5.0×1018cm-3以下であり、
前記第3層の窒素濃度は、5.0×1013cm-3以上1.0×1017cm-3以下である、SiCエピタキシャルウェハ。 - 前記第2層の膜厚は、2.0μm以上である、請求項1に記載のSiCエピタキシャルウェハ。
- 前記第1層の膜厚は、0.2μm以上2.0μm以下である、請求項1又は2に記載のSiCエピタキシャルウェハ。
- 窒素濃度が6.0×1018cm-3以上1.5×1019cm-3以下のSiC基板上に、窒素濃度が1.0×1017cm-3以上1.5×1018cm-3以下のSiCエピタキシャル層の第1層を積層する工程と、
前記第1層上に、窒素濃度が1.0×1018cm-3以上5.0×1018cm-3以下のSiCエピタキシャル層の第2層を積層する工程と、
前記第2層上に、窒素濃度が5.0×1013cm-3以上1.0×1017cm-3以下のSiCエピタキシャル層の第3層を積層する工程と、を有する、SiCエピタキシャルウェハの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021115760A JP7187620B1 (ja) | 2021-07-13 | 2021-07-13 | SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 |
CN202410004688.4A CN117832061A (zh) | 2021-07-13 | 2022-07-11 | SiC器件和SiC器件的制造方法 |
CN202210812815.4A CN115621113B (zh) | 2021-07-13 | 2022-07-11 | SiC外延晶片和SiC外延晶片的制造方法 |
US17/862,933 US20230026927A1 (en) | 2021-07-13 | 2022-07-12 | SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER |
JP2022189408A JP7216248B1 (ja) | 2021-07-13 | 2022-11-28 | SiCデバイス及びSiCデバイスの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021115760A JP7187620B1 (ja) | 2021-07-13 | 2021-07-13 | SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022189408A Division JP7216248B1 (ja) | 2021-07-13 | 2022-11-28 | SiCデバイス及びSiCデバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP7187620B1 true JP7187620B1 (ja) | 2022-12-12 |
JP2023012239A JP2023012239A (ja) | 2023-01-25 |
Family
ID=84418202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021115760A Active JP7187620B1 (ja) | 2021-07-13 | 2021-07-13 | SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20230026927A1 (ja) |
JP (1) | JP7187620B1 (ja) |
CN (2) | CN117832061A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017094764A1 (ja) | 2015-12-02 | 2017-06-08 | 三菱電機株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
JP2019021694A (ja) | 2017-07-13 | 2019-02-07 | 日立金属株式会社 | 炭化ケイ素積層基板およびその製造方法 |
JP2019099438A (ja) | 2017-12-06 | 2019-06-24 | 昭和電工株式会社 | SiCエピタキシャルウェハの評価方法及び製造方法 |
JP2020077807A (ja) | 2018-11-09 | 2020-05-21 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3527496B2 (ja) * | 2000-03-03 | 2004-05-17 | 松下電器産業株式会社 | 半導体装置 |
WO2002043157A1 (fr) * | 2000-11-21 | 2002-05-30 | Matsushita Electric Industrial Co.,Ltd. | Dispositif a semi-conducteur et procede de fabrication associe |
DE10207522B4 (de) * | 2001-02-23 | 2018-08-02 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
JP3811624B2 (ja) * | 2001-04-27 | 2006-08-23 | 松下電器産業株式会社 | 半導体装置 |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
US7473929B2 (en) * | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
JP2005167035A (ja) * | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
US7391058B2 (en) * | 2005-06-27 | 2008-06-24 | General Electric Company | Semiconductor devices and methods of making same |
DE102005046707B3 (de) * | 2005-09-29 | 2007-05-03 | Siced Electronics Development Gmbh & Co. Kg | SiC-PN-Leistungsdiode |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4309967B2 (ja) * | 2007-10-15 | 2009-08-05 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2009130266A (ja) * | 2007-11-27 | 2009-06-11 | Toshiba Corp | 半導体基板および半導体装置、半導体装置の製造方法 |
JP5458509B2 (ja) * | 2008-06-04 | 2014-04-02 | 日立金属株式会社 | 炭化珪素半導体基板 |
CN102171832A (zh) * | 2009-04-10 | 2011-08-31 | 住友电气工业株式会社 | 绝缘栅场效应晶体管 |
KR101375494B1 (ko) * | 2010-01-08 | 2014-03-17 | 미쓰비시덴키 가부시키가이샤 | 에피택셜 웨이퍼 및 반도체 소자 |
DE112011102787B4 (de) * | 2010-08-24 | 2022-02-10 | Mitsubishi Electric Corp. | Epitaxialwafer und Halbleitereinrichtung |
JP5577478B1 (ja) * | 2012-10-30 | 2014-08-20 | パナソニック株式会社 | 半導体装置 |
JP6122704B2 (ja) * | 2013-06-13 | 2017-04-26 | 昭和電工株式会社 | SiCエピタキシャルウェハ及びその製造方法 |
US9515211B2 (en) * | 2013-07-26 | 2016-12-06 | University Of South Carolina | Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer |
JP2015053462A (ja) * | 2013-08-06 | 2015-03-19 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6441190B2 (ja) * | 2015-09-11 | 2018-12-19 | 株式会社東芝 | 半導体装置の製造方法 |
JP2017168666A (ja) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
US10707075B2 (en) * | 2016-11-28 | 2020-07-07 | Mitsubishi Electric Corporation | Semiconductor wafer, semiconductor device, and method for producing semiconductor device |
DE112018002540T5 (de) * | 2017-05-17 | 2020-02-20 | Mitsubishi Electric Corporation | SIC-Epitaxiewafer und Verfahren zum Herstellen desselben |
JP2019091798A (ja) * | 2017-11-14 | 2019-06-13 | 昭和電工株式会社 | SiCエピタキシャルウェハ |
JP7046026B2 (ja) * | 2019-03-01 | 2022-04-01 | 三菱電機株式会社 | SiCエピタキシャルウエハ、半導体装置、電力変換装置 |
-
2021
- 2021-07-13 JP JP2021115760A patent/JP7187620B1/ja active Active
-
2022
- 2022-07-11 CN CN202410004688.4A patent/CN117832061A/zh active Pending
- 2022-07-11 CN CN202210812815.4A patent/CN115621113B/zh active Active
- 2022-07-12 US US17/862,933 patent/US20230026927A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017094764A1 (ja) | 2015-12-02 | 2017-06-08 | 三菱電機株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
JP2019021694A (ja) | 2017-07-13 | 2019-02-07 | 日立金属株式会社 | 炭化ケイ素積層基板およびその製造方法 |
JP2019099438A (ja) | 2017-12-06 | 2019-06-24 | 昭和電工株式会社 | SiCエピタキシャルウェハの評価方法及び製造方法 |
JP2020077807A (ja) | 2018-11-09 | 2020-05-21 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20230026927A1 (en) | 2023-01-26 |
CN117832061A (zh) | 2024-04-05 |
CN115621113B (zh) | 2024-01-23 |
CN115621113A (zh) | 2023-01-17 |
JP2023012239A (ja) | 2023-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110192266B (zh) | SiC外延晶片及其制造方法 | |
KR101410436B1 (ko) | 에피택셜 탄화규소 단결정 기판의 제조 방법 및 이 방법에 의하여 얻은 에피택셜 탄화규소 단결정 기판 | |
KR101430217B1 (ko) | 에피택셜 탄화규소 단결정 기판 및 그 제조 방법 | |
CN101802273A (zh) | 外延SiC单晶衬底及外延SiC单晶衬底的制造方法 | |
US20140054609A1 (en) | Large high-quality epitaxial wafers | |
US10985079B2 (en) | Method of manufacturing SiC epitaxial wafer | |
JP2019091798A (ja) | SiCエピタキシャルウェハ | |
US10964785B2 (en) | SiC epitaxial wafer and manufacturing method of the same | |
JP2023093554A (ja) | SiCエピタキシャルウェハ | |
JP2018199595A (ja) | SiCエピタキシャルウェハ及びその製造方法 | |
JP7187620B1 (ja) | SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 | |
JP7216248B1 (ja) | SiCデバイス及びSiCデバイスの製造方法 | |
US20240011191A1 (en) | SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER | |
JP2015185576A (ja) | Iii族窒化物半導体素子、iii族窒化物半導体エピタキシャル基板およびiii族窒化物半導体素子の製造方法 | |
JP6535204B2 (ja) | Ga2O3系結晶膜の形成方法 | |
JP2011213557A (ja) | 導電性iii族窒化物単結晶基板の製造方法 | |
US20240200227A1 (en) | SiC WAFER AND SiC EPITAXIAL WAFER | |
JP7415831B2 (ja) | 炭化ケイ素半導体エピタキシャル基板の製造方法 | |
RU2822539C1 (ru) | Способ изготовления эпитаксиальной структуры кремния | |
US20220310795A1 (en) | Silicon carbide epitaxial substrate and method for manufacturing same | |
WO2024117953A1 (en) | Production of silicon carbide epitaxial wafers | |
JP2024148750A (ja) | 積層基板 | |
KR20150002062A (ko) | 에피택셜 웨이퍼 | |
KR20150000317A (ko) | 에피택셜 웨이퍼 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220301 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20220301 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221018 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221101 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7187620 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |