CN101802273A - 外延SiC单晶衬底及外延SiC单晶衬底的制造方法 - Google Patents
外延SiC单晶衬底及外延SiC单晶衬底的制造方法 Download PDFInfo
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- CN101802273A CN101802273A CN200880106397A CN200880106397A CN101802273A CN 101802273 A CN101802273 A CN 101802273A CN 200880106397 A CN200880106397 A CN 200880106397A CN 200880106397 A CN200880106397 A CN 200880106397A CN 101802273 A CN101802273 A CN 101802273A
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (27)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2007236661 | 2007-09-12 | ||
JP236661/2007 | 2007-09-12 | ||
JP211757/2008 | 2008-08-20 | ||
JP2008211757 | 2008-08-20 | ||
PCT/JP2008/066571 WO2009035095A1 (ja) | 2007-09-12 | 2008-09-12 | エピタキシャルSiC単結晶基板及びエピタキシャルSiC単結晶基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101802273A true CN101802273A (zh) | 2010-08-11 |
CN101802273B CN101802273B (zh) | 2013-04-17 |
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Application Number | Title | Priority Date | Filing Date |
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CN200880106397.5A Active CN101802273B (zh) | 2007-09-12 | 2008-09-12 | 外延SiC单晶衬底及外延SiC单晶衬底的制造方法 |
Country Status (7)
Country | Link |
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US (2) | US8293623B2 (zh) |
EP (1) | EP2196566A4 (zh) |
JP (1) | JP5273741B2 (zh) |
KR (1) | KR101287787B1 (zh) |
CN (1) | CN101802273B (zh) |
TW (1) | TWI408262B (zh) |
WO (1) | WO2009035095A1 (zh) |
Cited By (20)
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CN103635615A (zh) * | 2011-05-16 | 2014-03-12 | 株式会社电装 | 碳化硅单晶、碳化硅晶片和半导体器件 |
CN104024492A (zh) * | 2011-12-02 | 2014-09-03 | 株式会社电装 | SiC单晶、SiC晶片以及半导体器件 |
CN104718601A (zh) * | 2013-03-15 | 2015-06-17 | 道康宁公司 | 具有SiC外延膜的SiC衬底 |
CN105264644A (zh) * | 2013-05-31 | 2016-01-20 | 三垦电气株式会社 | 硅系基板、半导体装置及半导体装置的制造方法 |
CN105658847A (zh) * | 2014-02-28 | 2016-06-08 | 新日铁住金株式会社 | 外延碳化硅晶片的制造方法 |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
CN107923858A (zh) * | 2015-09-03 | 2018-04-17 | 信越半导体株式会社 | 单晶晶圆的表内判断方法 |
CN108138360A (zh) * | 2015-10-07 | 2018-06-08 | 住友电气工业株式会社 | 碳化硅外延基板及用于制造碳化硅半导体装置的方法 |
US10002760B2 (en) | 2014-07-29 | 2018-06-19 | Dow Silicones Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN108463871A (zh) * | 2016-02-10 | 2018-08-28 | 住友电气工业株式会社 | 碳化硅外延衬底及制造碳化硅半导体器件的方法 |
CN108463581A (zh) * | 2016-02-15 | 2018-08-28 | 住友电气工业株式会社 | 碳化硅外延基板和制造碳化硅半导体装置的方法 |
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JP6060863B2 (ja) * | 2013-09-13 | 2017-01-18 | トヨタ自動車株式会社 | SiC単結晶及びその製造方法 |
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JP2020026376A (ja) * | 2018-08-13 | 2020-02-20 | 昭和電工株式会社 | SiC単結晶、SiCインゴットの製造方法及びSiCウェハの製造方法 |
JP7190841B2 (ja) | 2018-08-13 | 2022-12-16 | 昭和電工株式会社 | SiCインゴットの製造方法及びSiCウェハの製造方法 |
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KR102610826B1 (ko) * | 2018-08-14 | 2023-12-07 | 주식회사 엘엑스세미콘 | 에피택셜 웨이퍼 및 그 제조 방법 |
JP7129889B2 (ja) * | 2018-11-09 | 2022-09-02 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
CN112420803A (zh) * | 2019-08-23 | 2021-02-26 | 比亚迪股份有限公司 | 碳化硅衬底及其制备方法和半导体器件 |
WO2021153351A1 (ja) * | 2020-01-29 | 2021-08-05 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
CN114540954B (zh) * | 2020-11-25 | 2022-12-09 | 北京天科合达半导体股份有限公司 | 碳化硅单晶片、晶体及制备方法、半导体器件 |
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Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6773504B2 (en) * | 2001-04-12 | 2004-08-10 | Sumitomo Electric Industries, Ltd. | Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
ATE546569T1 (de) * | 2002-03-19 | 2012-03-15 | Central Res Inst Elect | Verfahren zur herstellung von sic-kristall |
US7601441B2 (en) | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
US20070290211A1 (en) | 2004-03-26 | 2007-12-20 | The Kansai Electric Power Co., Inc. | Bipolar Semiconductor Device and Process for Producing the Same |
EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
JP2006321707A (ja) * | 2005-04-22 | 2006-11-30 | Bridgestone Corp | 炭化ケイ素単結晶ウェハ及びその製造方法 |
JP2007131504A (ja) | 2005-11-14 | 2007-05-31 | Shikusuon:Kk | SiCエピタキシャルウエーハおよびそれを用いた半導体デバイス |
US7816217B2 (en) * | 2005-12-22 | 2010-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-step epitaxial process for depositing Si/SiGe |
JP2007236661A (ja) | 2006-03-09 | 2007-09-20 | Samii Kk | 遊技機 |
JP4946202B2 (ja) | 2006-06-26 | 2012-06-06 | 日立金属株式会社 | 炭化珪素半導体エピタキシャル基板の製造方法。 |
JP4842094B2 (ja) | 2006-11-02 | 2011-12-21 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法 |
JP5034772B2 (ja) | 2007-01-29 | 2012-09-26 | セイコーエプソン株式会社 | 温度補償圧電発振器 |
TWI408262B (zh) | 2007-09-12 | 2013-09-11 | Showa Denko Kk | 磊晶SiC單晶基板及磊晶SiC單晶基板之製造方法 |
US8101500B2 (en) * | 2007-09-27 | 2012-01-24 | Fairchild Semiconductor Corporation | Semiconductor device with (110)-oriented silicon |
US20100117118A1 (en) * | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
-
2008
- 2008-09-12 TW TW097135187A patent/TWI408262B/zh active
- 2008-09-12 EP EP08829974A patent/EP2196566A4/en not_active Ceased
- 2008-09-12 JP JP2009532248A patent/JP5273741B2/ja active Active
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- 2008-09-12 CN CN200880106397.5A patent/CN101802273B/zh active Active
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TW200932966A (en) | 2009-08-01 |
KR20100050562A (ko) | 2010-05-13 |
WO2009035095A1 (ja) | 2009-03-19 |
CN101802273B (zh) | 2013-04-17 |
JPWO2009035095A1 (ja) | 2010-12-24 |
US8716718B2 (en) | 2014-05-06 |
US8293623B2 (en) | 2012-10-23 |
JP5273741B2 (ja) | 2013-08-28 |
EP2196566A4 (en) | 2011-11-30 |
KR101287787B1 (ko) | 2013-07-18 |
US20130009170A1 (en) | 2013-01-10 |
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TWI408262B (zh) | 2013-09-11 |
US20110006309A1 (en) | 2011-01-13 |
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