TWI474501B - 光電半導體本體及製造光電半導體本體之方法 - Google Patents

光電半導體本體及製造光電半導體本體之方法 Download PDF

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Publication number
TWI474501B
TWI474501B TW97145091A TW97145091A TWI474501B TW I474501 B TWI474501 B TW I474501B TW 97145091 A TW97145091 A TW 97145091A TW 97145091 A TW97145091 A TW 97145091A TW I474501 B TWI474501 B TW I474501B
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TW
Taiwan
Prior art keywords
layer
semiconductor body
recess
buffer layer
contact
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TW97145091A
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English (en)
Chinese (zh)
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TW200933936A (en
Inventor
伯索德哈恩
安德烈斯韋瑪
古朵韋氏
巫立奇曾德
Original Assignee
歐斯朗奧托半導體股份有限公司
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Publication of TW200933936A publication Critical patent/TW200933936A/zh
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Publication of TWI474501B publication Critical patent/TWI474501B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
TW97145091A 2007-11-30 2008-11-21 光電半導體本體及製造光電半導體本體之方法 TWI474501B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers

Publications (2)

Publication Number Publication Date
TW200933936A TW200933936A (en) 2009-08-01
TWI474501B true TWI474501B (zh) 2015-02-21

Family

ID=40455567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97145091A TWI474501B (zh) 2007-11-30 2008-11-21 光電半導體本體及製造光電半導體本體之方法

Country Status (7)

Country Link
US (1) US20110204322A1 (enExample)
JP (1) JP2011505073A (enExample)
KR (1) KR20100097188A (enExample)
CN (1) CN101878546B (enExample)
DE (1) DE102007057756B4 (enExample)
TW (1) TWI474501B (enExample)
WO (1) WO2009068006A2 (enExample)

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JP5052636B2 (ja) 2010-03-11 2012-10-17 株式会社東芝 半導体発光素子
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DE102010032497A1 (de) 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
CN102694096A (zh) * 2011-03-21 2012-09-26 华新丽华股份有限公司 发光二极管及其制造方法
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

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TW200518364A (en) * 2003-11-18 2005-06-01 Itswell Co Ltd Semiconductor light emitting diode and method for manufacturing the same

Also Published As

Publication number Publication date
TW200933936A (en) 2009-08-01
DE102007057756A1 (de) 2009-06-04
WO2009068006A3 (de) 2009-09-11
CN101878546A (zh) 2010-11-03
CN101878546B (zh) 2012-05-23
US20110204322A1 (en) 2011-08-25
WO2009068006A2 (de) 2009-06-04
DE102007057756B4 (de) 2022-03-10
KR20100097188A (ko) 2010-09-02
JP2011505073A (ja) 2011-02-17

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