CN101878546B - 光电子半导体本体和用于制造光电子半导体本体的方法 - Google Patents

光电子半导体本体和用于制造光电子半导体本体的方法 Download PDF

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Publication number
CN101878546B
CN101878546B CN2008801184236A CN200880118423A CN101878546B CN 101878546 B CN101878546 B CN 101878546B CN 2008801184236 A CN2008801184236 A CN 2008801184236A CN 200880118423 A CN200880118423 A CN 200880118423A CN 101878546 B CN101878546 B CN 101878546B
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semiconductor body
layer
recess
contact
resilient coating
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CN101878546A (zh
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吉多·韦斯
贝特霍尔德·哈恩
乌尔里克·策恩德
安德烈亚斯·魏玛
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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CN2008801184236A 2007-11-30 2008-11-26 光电子半导体本体和用于制造光电子半导体本体的方法 Active CN101878546B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007057756.9 2007-11-30
DE102007057756.9A DE102007057756B4 (de) 2007-11-30 2007-11-30 Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
PCT/DE2008/001957 WO2009068006A2 (de) 2007-11-30 2008-11-26 Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers

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CN101878546A CN101878546A (zh) 2010-11-03
CN101878546B true CN101878546B (zh) 2012-05-23

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US (1) US20110204322A1 (enExample)
JP (1) JP2011505073A (enExample)
KR (1) KR20100097188A (enExample)
CN (1) CN101878546B (enExample)
DE (1) DE102007057756B4 (enExample)
TW (1) TWI474501B (enExample)
WO (1) WO2009068006A2 (enExample)

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JP5052636B2 (ja) 2010-03-11 2012-10-17 株式会社東芝 半導体発光素子
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
DE102010032497A1 (de) 2010-07-28 2012-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
US8829487B2 (en) * 2011-03-21 2014-09-09 Walsin Lihwa Corporation Light emitting diode and method for manufacturing the same
US8664679B2 (en) * 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102020126442A1 (de) * 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung mit einer kontaktschicht und einer darüber angeordneten aufrauschicht sowie herstellungsverfahren

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US6060730A (en) * 1997-07-10 2000-05-09 Rohm Co., Ltd. Semiconductor light emitting device
CN1870313A (zh) * 2006-06-15 2006-11-29 厦门大学 树叶脉络形大功率氮化镓基发光二极管芯片的p、n电极

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Publication number Publication date
WO2009068006A2 (de) 2009-06-04
JP2011505073A (ja) 2011-02-17
TWI474501B (zh) 2015-02-21
DE102007057756A1 (de) 2009-06-04
CN101878546A (zh) 2010-11-03
KR20100097188A (ko) 2010-09-02
US20110204322A1 (en) 2011-08-25
WO2009068006A3 (de) 2009-09-11
TW200933936A (en) 2009-08-01
DE102007057756B4 (de) 2022-03-10

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