JP2005302803A - 窒化物半導体発光素子およびその製造方法 - Google Patents
窒化物半導体発光素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000605 extraction Methods 0.000 claims abstract description 28
- 238000002310 reflectometry Methods 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
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- 229910052751 metal Inorganic materials 0.000 claims description 6
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- 238000009795 derivation Methods 0.000 abstract 1
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
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- 229910052719 titanium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】 基板上に、第一導伝型半導体層、発光層および第二導伝型半導体層が、この順番で形成され、さらに、前記第一導伝型半導体層上に第一電極が形成され、前記第二導伝型半導体層上に第二電極が形成されている窒化物半導体発光素子であって、前記第一電極および第二電極は、主とする発光波長に対して高反射率を有し、主とする光取り出し面は前記窒化物半導体発光素子の側面であることを特徴とする、窒化物半導体発光素子。
【選択図】 図1
Description
図2は、本発明により、サファイア基板上に形成されたGaN系化合物半導体で形成された発光素子の断面構造図である。また、図3は、当該発光素子を上面から見た平面図である。
図5は、本発明の窒化物半導体発光素子の構造を示す概略断面図であり、図6は、当該構造を上面からみた平面図である。図5において、本発明の窒化物半導体発光素子の構造は、サファイア基板上に形成されたGaN系化合物半導体で形成された発光素子である。
また、従来の半透明電極を用いた発光素子に比べて光取り出し効率が向上し、光出力が2倍程度になった。
図8は、本発明の窒化物半導体発光素子の構造を示す概略断面図であり、図9は、当該構造を下面からみた平面図である。図8において、本発明の窒化物半導体発光素子の構造は、GaN基板上に形成されたGaN系化合物半導体で形成された発光素子である。
また、従来の半透明電極を用いた発光素子に比べて光取り出し効率が向上し、光出力が2倍程度になった。
Claims (20)
- 基板上に、第一導伝型半導体層、発光層および第二導伝型半導体層が、この順番で形成され、さらに、少なくとも前記第二導伝型半導体層上に第二電極が形成されている窒化物半導体発光素子であって、
第二電極は、主とする発光波長に対して高反射率を有し、
主とする光取り出し面は前記窒化物半導体発光素子の側面であることを特徴とする、窒化物半導体発光素子。 - 第二電極の反射率は、主とする発光波長に対して70%以上の反射率を有することを特徴とする、請求項1に記載の窒化物半導体発光素子。
- 第二電極は、第二導伝型半導体層表面の60%以上を覆っていることを特徴とする、請求項1または2に記載の窒化物半導体発光素子。
- 前記基板は、主たる発光波長に対して透過性であることを特徴とする、請求項1〜3のいずれかに記載の窒化物半導体発光素子。
- 前記基板において、前記第一導伝型半導体層を形成した面と対向する面は、前記基板の第一導伝型半導体形成面に対して平行でない面を含むか、または凹凸形状を有することを特徴とする、請求項1〜4のいずれかに記載の窒化物半導体発光素子。
- 主たる発光波長に対して高反射率の物質が、前記基板の第一導伝型半導体形成面と対向する面を覆うように形成されていることを特徴とする、請求項1〜5のいずれかに記載の窒化物半導体発光素子。
- 前記基板は、サファイア基板、GaN基板またはSiC基板のいずれかであることを特徴とする、請求項1〜6のいずれかに記載の窒化物半導体発光素子。
- 前記第二電極は、p型電極であり、該p型電極はAgを含むことを特徴とする、請求項1〜7のいずれかに記載の窒化物半導体発光素子。
- 前記第一導伝型半導体層上または基板裏面には前記第一電極が形成されており、該第一電極はn型電極であり、該n型電極は、Alを含むことを特徴とする、請求項1〜7のいずれかに記載の窒化物半導体発光素子。
- 前記第一導伝型半導体は、n型半導体であり、前記第二導伝型半導体は、p型半導体であることを特徴とする、請求項1〜9のいずれかに記載の窒化物半導体発光素子。
- 前記第一電極は、窒化物半導体発光素子において上面方向からみて実質的に中心に形成されていることを特徴とする、請求項1〜10のいずれかに記載の窒化物半導体発光素子。
- 前記基板の第一導伝型半導体形成面と対向する面において、円錐形状の穴が形成されていることを特徴とする、請求項1〜11のいずれかに記載の窒化物半導体発光素子。
- 前記円錐形状の穴は、前記基板面の中心に形成されていることを特徴とする、請求項12に記載の窒化物半導体発光素子。
- 窒化物半導体発光素子の上面において、前記第一電極および/または前記第二電極が形成されずに前記第一導伝型半導体層および/または前記第二導伝型半導体層が露出している部分、および電極上の一部に、主たる発光波長に対して高反射率である膜が形成されていることを特徴とする、請求項1〜13のいずれかに記載の窒化物半導体発光素子。
- 前記高反射率の物質は、AgまたはAlを含むことを特徴とする請求項6に記載の窒化物半導体発光素子。
- 前記高反射率の物質は、誘電体を含む多層膜であることを特徴とする、請求項14に記載の窒化物半導体発光素子。
- 前記高反射率の物質は、主とする発光波長に対して70%以上の反射率を有することを特徴とする、請求項14または16に記載の窒化物半導体発光素子。
- 前記第二電極はAgを含み、該電極の厚さは10nm以上であることを特徴とする、請求項1〜17のいずれかに記載の窒化物半導体発光素子。
- 基板上に、第一導電型半導体層を形成する工程と、
該第一導伝型半導体層上に発光層を形成する工程と、
該発光層上に第二導伝型半導体層を形成する工程と、
該第二導伝型半導体層上に第二電極を形成する工程と、
前記第二電極、前記第二導伝型半導体層、前記発光層および前記第一導伝型半導体層の一部にエッチング処理を施し、当該処理を施した部分に第一電極を形成する工程と、を含む窒化物半導体発光素子の製造方法。 - 前記第二伝導体半導体層上に第二電極を形成する工程は、Pd、PtおよびNiのうちいずれか1つまたは2つ以上の金属を積層形成して、さらに該積層形成した金属の上にAgを10nm以上の膜厚で形成し、その後、400℃以上の温度で熱処理する工程を包含する、請求項19に記載の窒化物半導体発光素子の製造方法。
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US11/100,643 US7352009B2 (en) | 2004-04-07 | 2005-04-06 | Light emitting nitride semiconductor device and method of fabricating the same |
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JP2007173551A (ja) * | 2005-12-22 | 2007-07-05 | Showa Denko Kk | 発光ダイオード及びその製造方法 |
JP2007221141A (ja) * | 2006-02-16 | 2007-08-30 | Samsung Electro Mech Co Ltd | 端面発光型led及びその製造方法 |
JPWO2007138658A1 (ja) * | 2006-05-26 | 2009-10-01 | ローム株式会社 | 窒化物半導体発光素子 |
JP2012529167A (ja) * | 2009-06-04 | 2012-11-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニック半導体ボディ及びオプトエレクトロニック半導体チップ |
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US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US8282485B1 (en) | 2008-06-04 | 2012-10-09 | Zhang Evan Y W | Constant and shadowless light source |
TWI470832B (zh) * | 2010-03-08 | 2015-01-21 | Lg Innotek Co Ltd | 發光裝置 |
CN102255025A (zh) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | 发光二极管 |
US8344392B2 (en) | 2011-05-12 | 2013-01-01 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
JP5814968B2 (ja) * | 2013-03-22 | 2015-11-17 | 株式会社東芝 | 窒化物半導体発光装置 |
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