JP2013518436A5 - - Google Patents
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- JP2013518436A5 JP2013518436A5 JP2012551188A JP2012551188A JP2013518436A5 JP 2013518436 A5 JP2013518436 A5 JP 2013518436A5 JP 2012551188 A JP2012551188 A JP 2012551188A JP 2012551188 A JP2012551188 A JP 2012551188A JP 2013518436 A5 JP2013518436 A5 JP 2013518436A5
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- JP
- Japan
- Prior art keywords
- region
- barrier layer
- layer
- metal
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims 57
- 239000002184 metal Substances 0.000 claims 57
- 230000004888 barrier function Effects 0.000 claims 45
- 230000007704 transition Effects 0.000 claims 21
- 229910002704 AlGaN Inorganic materials 0.000 claims 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 150000001450 anions Chemical class 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/697,235 | 2010-01-30 | ||
| US12/697,235 US8624260B2 (en) | 2010-01-30 | 2010-01-30 | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
| PCT/US2011/020916 WO2011094059A2 (en) | 2010-01-30 | 2011-01-12 | Low leakage gan mosfet |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013518436A JP2013518436A (ja) | 2013-05-20 |
| JP2013518436A5 true JP2013518436A5 (enExample) | 2014-03-20 |
| JP5730332B2 JP5730332B2 (ja) | 2015-06-10 |
Family
ID=44320049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012551188A Active JP5730332B2 (ja) | 2010-01-30 | 2011-01-12 | 低リークｇａｎｍｏｓｆｅｔ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8624260B2 (enExample) |
| JP (1) | JP5730332B2 (enExample) |
| CN (1) | CN102834920B (enExample) |
| TW (1) | TWI546864B (enExample) |
| WO (1) | WO2011094059A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8785973B2 (en) * | 2010-04-19 | 2014-07-22 | National Semiconductor Corporation | Ultra high voltage GaN ESD protection device |
| RU2615481C2 (ru) * | 2010-12-29 | 2017-04-04 | Нестек С.А. | Композиция наполнителя, содержащая инкапсулированное масло |
| US9024357B2 (en) * | 2011-04-15 | 2015-05-05 | Stmicroelectronics S.R.L. | Method for manufacturing a HEMT transistor and corresponding HEMT transistor |
| KR20130008281A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 파워소자의 제조방법 |
| US8878188B2 (en) * | 2013-02-22 | 2014-11-04 | Translucent, Inc. | REO gate dielectric for III-N device on Si substrate |
| US9202903B2 (en) | 2013-03-01 | 2015-12-01 | Cree, Inc. | Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same |
| US9178016B2 (en) * | 2013-03-01 | 2015-11-03 | Infineon Technologies Austria Ag | Charge protection for III-nitride devices |
| JP6220188B2 (ja) * | 2013-08-15 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR20150085724A (ko) * | 2014-01-16 | 2015-07-24 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| US9640620B2 (en) * | 2014-11-03 | 2017-05-02 | Texas Instruments Incorporated | High power transistor with oxide gate barriers |
| CN105655395B (zh) * | 2015-01-27 | 2018-05-15 | 苏州捷芯威半导体有限公司 | 一种增强型高电子迁移率晶体管及其制作方法 |
| ITUB20155503A1 (it) | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Metodo di fabbricazione di un transistore hemt e transistore hemt con migliorata mobilita' elettronica |
| JP6772579B2 (ja) * | 2016-06-23 | 2020-10-21 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6640687B2 (ja) | 2016-09-09 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| CN106409901B (zh) * | 2016-10-27 | 2019-10-11 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制备方法 |
| WO2019015754A1 (en) * | 2017-07-20 | 2019-01-24 | Swegan Ab | ELECTRON HIGH MOBILITY TRANSISTOR HETERROSTRUCTURE AND METHOD FOR PRODUCING THE SAME |
| CN107634009A (zh) * | 2017-08-10 | 2018-01-26 | 北京大学深圳研究生院 | 一种GaN MOS‑HEMT器件及其制备方法 |
| TWI670775B (zh) * | 2018-08-27 | 2019-09-01 | 世界先進積體電路股份有限公司 | 半導體裝置結構及其製造方法 |
| CN110875385B (zh) * | 2018-09-04 | 2023-03-17 | 世界先进积体电路股份有限公司 | 半导体装置结构及其制造方法 |
| US10651033B1 (en) | 2019-01-07 | 2020-05-12 | Vanguard International Semiconductor Corporation | Semiconductor device structures and methods for manufacturing the same |
| TWI851591B (zh) * | 2019-08-06 | 2024-08-11 | 英商Ｉｑｅ有限公司 | 分層結構的介電鈍化 |
| US11133408B2 (en) * | 2019-08-06 | 2021-09-28 | Iqe Plc | Dielectric passivation for layered structures |
| WO2021025688A1 (en) * | 2019-08-06 | 2021-02-11 | Iqe Plc | Dielectric passivation for layered iii-nitride structures |
| CN113224155A (zh) * | 2021-04-08 | 2021-08-06 | 中山大学 | 一种具有高导通能力的氮化镓晶体管及其制备方法 |
| CN114530496B (zh) * | 2022-01-06 | 2025-06-06 | 西安电子科技大学 | 一种改善欧姆接触电阻的N面GaN基p沟道器件及其制备方法 |
| WO2023181749A1 (ja) * | 2022-03-25 | 2023-09-28 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
| WO2024205712A2 (en) * | 2023-03-17 | 2024-10-03 | The Penn State Research Foundation | High power super-heterojunction high electron mobility transistor and method of formation |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920005632B1 (ko) * | 1987-03-20 | 1992-07-10 | 가부시기가이샤 히다찌세이사꾸쇼 | 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법 |
| US6593193B2 (en) | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| WO2003032397A2 (en) | 2001-07-24 | 2003-04-17 | Cree, Inc. | INSULTING GATE AlGaN/GaN HEMT |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7547928B2 (en) | 2004-06-30 | 2009-06-16 | Interuniversitair Microelektronica Centrum (Imec) | AlGaN/GaN high electron mobility transistor devices |
| US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
| JP4836111B2 (ja) * | 2004-12-15 | 2011-12-14 | 日本電信電話株式会社 | 半導体装置 |
| US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
| US7399692B2 (en) | 2005-10-03 | 2008-07-15 | International Rectifier Corporation | III-nitride semiconductor fabrication |
| JP5065595B2 (ja) * | 2005-12-28 | 2012-11-07 | 株式会社東芝 | 窒化物系半導体装置 |
| JP4580899B2 (ja) * | 2006-06-08 | 2010-11-17 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JP2008305816A (ja) * | 2007-06-05 | 2008-12-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2009076673A (ja) * | 2007-09-20 | 2009-04-09 | Furukawa Electric Co Ltd:The | Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ |
| JP2009231396A (ja) * | 2008-03-19 | 2009-10-08 | Sumitomo Chemical Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8309987B2 (en) | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| US8802516B2 (en) | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
-
2010
- 2010-01-30 US US12/697,235 patent/US8624260B2/en active Active
-
2011
- 2011-01-12 WO PCT/US2011/020916 patent/WO2011094059A2/en not_active Ceased
- 2011-01-12 JP JP2012551188A patent/JP5730332B2/ja active Active
- 2011-01-12 CN CN201180016639.3A patent/CN102834920B/zh active Active
- 2011-01-17 TW TW100101623A patent/TWI546864B/zh active
-
2013
- 2013-11-27 US US14/091,606 patent/US8940593B2/en active Active
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