TWI546864B - 具有低漏電流和改善的可靠性的增強型氮化鎵金氧半場效電晶體 - Google Patents
具有低漏電流和改善的可靠性的增強型氮化鎵金氧半場效電晶體 Download PDFInfo
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- TWI546864B TWI546864B TW100101623A TW100101623A TWI546864B TW I546864 B TWI546864 B TW I546864B TW 100101623 A TW100101623 A TW 100101623A TW 100101623 A TW100101623 A TW 100101623A TW I546864 B TWI546864 B TW I546864B
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- 230000005669 field effect Effects 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 230000004888 barrier function Effects 0.000 claims description 85
- 229910002704 AlGaN Inorganic materials 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/697,235 US8624260B2 (en) | 2010-01-30 | 2010-01-30 | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140701A TW201140701A (en) | 2011-11-16 |
| TWI546864B true TWI546864B (zh) | 2016-08-21 |
Family
ID=44320049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100101623A TWI546864B (zh) | 2010-01-30 | 2011-01-17 | 具有低漏電流和改善的可靠性的增強型氮化鎵金氧半場效電晶體 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8624260B2 (enExample) |
| JP (1) | JP5730332B2 (enExample) |
| CN (1) | CN102834920B (enExample) |
| TW (1) | TWI546864B (enExample) |
| WO (1) | WO2011094059A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8785973B2 (en) * | 2010-04-19 | 2014-07-22 | National Semiconductor Corporation | Ultra high voltage GaN ESD protection device |
| RU2615481C2 (ru) * | 2010-12-29 | 2017-04-04 | Нестек С.А. | Композиция наполнителя, содержащая инкапсулированное масло |
| US9024357B2 (en) * | 2011-04-15 | 2015-05-05 | Stmicroelectronics S.R.L. | Method for manufacturing a HEMT transistor and corresponding HEMT transistor |
| KR20130008281A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 파워소자의 제조방법 |
| US8878188B2 (en) * | 2013-02-22 | 2014-11-04 | Translucent, Inc. | REO gate dielectric for III-N device on Si substrate |
| US9202903B2 (en) | 2013-03-01 | 2015-12-01 | Cree, Inc. | Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same |
| US9178016B2 (en) * | 2013-03-01 | 2015-11-03 | Infineon Technologies Austria Ag | Charge protection for III-nitride devices |
| JP6220188B2 (ja) * | 2013-08-15 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR20150085724A (ko) * | 2014-01-16 | 2015-07-24 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
| US9640620B2 (en) * | 2014-11-03 | 2017-05-02 | Texas Instruments Incorporated | High power transistor with oxide gate barriers |
| CN105655395B (zh) * | 2015-01-27 | 2018-05-15 | 苏州捷芯威半导体有限公司 | 一种增强型高电子迁移率晶体管及其制作方法 |
| ITUB20155503A1 (it) | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Metodo di fabbricazione di un transistore hemt e transistore hemt con migliorata mobilita' elettronica |
| JP6772579B2 (ja) * | 2016-06-23 | 2020-10-21 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6640687B2 (ja) | 2016-09-09 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| CN106409901B (zh) * | 2016-10-27 | 2019-10-11 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制备方法 |
| WO2019015754A1 (en) * | 2017-07-20 | 2019-01-24 | Swegan Ab | ELECTRON HIGH MOBILITY TRANSISTOR HETERROSTRUCTURE AND METHOD FOR PRODUCING THE SAME |
| CN107634009A (zh) * | 2017-08-10 | 2018-01-26 | 北京大学深圳研究生院 | 一种GaN MOS‑HEMT器件及其制备方法 |
| TWI670775B (zh) * | 2018-08-27 | 2019-09-01 | 世界先進積體電路股份有限公司 | 半導體裝置結構及其製造方法 |
| CN110875385B (zh) * | 2018-09-04 | 2023-03-17 | 世界先进积体电路股份有限公司 | 半导体装置结构及其制造方法 |
| US10651033B1 (en) | 2019-01-07 | 2020-05-12 | Vanguard International Semiconductor Corporation | Semiconductor device structures and methods for manufacturing the same |
| TWI851591B (zh) * | 2019-08-06 | 2024-08-11 | 英商Ｉｑｅ有限公司 | 分層結構的介電鈍化 |
| US11133408B2 (en) * | 2019-08-06 | 2021-09-28 | Iqe Plc | Dielectric passivation for layered structures |
| WO2021025688A1 (en) * | 2019-08-06 | 2021-02-11 | Iqe Plc | Dielectric passivation for layered iii-nitride structures |
| CN113224155A (zh) * | 2021-04-08 | 2021-08-06 | 中山大学 | 一种具有高导通能力的氮化镓晶体管及其制备方法 |
| CN114530496B (zh) * | 2022-01-06 | 2025-06-06 | 西安电子科技大学 | 一种改善欧姆接触电阻的N面GaN基p沟道器件及其制备方法 |
| WO2023181749A1 (ja) * | 2022-03-25 | 2023-09-28 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
| WO2024205712A2 (en) * | 2023-03-17 | 2024-10-03 | The Penn State Research Foundation | High power super-heterojunction high electron mobility transistor and method of formation |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920005632B1 (ko) * | 1987-03-20 | 1992-07-10 | 가부시기가이샤 히다찌세이사꾸쇼 | 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법 |
| US6593193B2 (en) | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| WO2003032397A2 (en) | 2001-07-24 | 2003-04-17 | Cree, Inc. | INSULTING GATE AlGaN/GaN HEMT |
| US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7547928B2 (en) | 2004-06-30 | 2009-06-16 | Interuniversitair Microelektronica Centrum (Imec) | AlGaN/GaN high electron mobility transistor devices |
| US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
| JP4836111B2 (ja) * | 2004-12-15 | 2011-12-14 | 日本電信電話株式会社 | 半導体装置 |
| US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
| US7399692B2 (en) | 2005-10-03 | 2008-07-15 | International Rectifier Corporation | III-nitride semiconductor fabrication |
| JP5065595B2 (ja) * | 2005-12-28 | 2012-11-07 | 株式会社東芝 | 窒化物系半導体装置 |
| JP4580899B2 (ja) * | 2006-06-08 | 2010-11-17 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JP2008305816A (ja) * | 2007-06-05 | 2008-12-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2009076673A (ja) * | 2007-09-20 | 2009-04-09 | Furukawa Electric Co Ltd:The | Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ |
| JP2009231396A (ja) * | 2008-03-19 | 2009-10-08 | Sumitomo Chemical Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8309987B2 (en) | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| US8802516B2 (en) | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
-
2010
- 2010-01-30 US US12/697,235 patent/US8624260B2/en active Active
-
2011
- 2011-01-12 WO PCT/US2011/020916 patent/WO2011094059A2/en not_active Ceased
- 2011-01-12 JP JP2012551188A patent/JP5730332B2/ja active Active
- 2011-01-12 CN CN201180016639.3A patent/CN102834920B/zh active Active
- 2011-01-17 TW TW100101623A patent/TWI546864B/zh active
-
2013
- 2013-11-27 US US14/091,606 patent/US8940593B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011094059A3 (en) | 2011-11-10 |
| US20140094005A1 (en) | 2014-04-03 |
| CN102834920A (zh) | 2012-12-19 |
| JP5730332B2 (ja) | 2015-06-10 |
| US8940593B2 (en) | 2015-01-27 |
| WO2011094059A2 (en) | 2011-08-04 |
| US20110186855A1 (en) | 2011-08-04 |
| TW201140701A (en) | 2011-11-16 |
| CN102834920B (zh) | 2015-06-10 |
| US8624260B2 (en) | 2014-01-07 |
| JP2013518436A (ja) | 2013-05-20 |
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