JP4580899B2 - 半導体記憶装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 229910004205 SiNX Inorganic materials 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 355
- 229910004298 SiO 2 Inorganic materials 0.000 description 45
- 239000010410 layer Substances 0.000 description 36
- 239000001257 hydrogen Substances 0.000 description 34
- 229910052739 hydrogen Inorganic materials 0.000 description 34
- 238000003860 storage Methods 0.000 description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 32
- 238000000034 method Methods 0.000 description 25
- 230000014759 maintenance of location Effects 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
本発明の第1の実施形態は、シリコン(Si)が化学量論的組成より過剰なシリコン窒化膜(SiNx:0.9≦x≦1.2)(以下、SiリッチSiN膜と表す)を含む電極間絶縁膜を使用する。これによって、電極間絶縁膜のリーク特性を改善し、電荷保持特性を向上させた不揮発性半導体記憶装置及びその製造方法を提供する。
本発明の第2の実施形態は、膜中の水素濃度を1%以下に低減したSi3N4膜(以下、低水素濃度Si3N4膜と表す)を含む電極間絶縁膜を使用する。これによって、電極間絶縁膜の電流リーク特性を改善し、電荷保持特性を向上させた不揮発性半導体記憶装置及びその製造方法を提供する。
本発明の第3の実施形態は、MONOS型不揮発性半導体記憶装置において電荷蓄積膜にSiリッチSiNx膜(0.9≦x≦1.2)を使用した不揮発性半導体記憶装置及びその製造方法である。
1つの変形例によれば、MONOS型不揮発性半導体記憶装置においても、図11に示したように、電荷蓄積膜64をSiリッチSiN膜に代えて、上記の第2の実施形態と同様に低水素濃度Si3N4膜64を使用することができる。この場合にも、第2の実施形態で図9を用いて説明したものと同様のメカニズムで、電荷蓄積膜64からブロック絶縁膜56を通ってコントロールゲート電極58へのリーク電流を抑制することができる。すなわち、低水素濃度Si3N4膜からなる電荷蓄積層64のフェルミレベルを下げることができ、これにより低水素濃度Si3N4膜64とブロック絶縁膜(SiO2膜)56との間のバリアハイトを大きくできる。その結果、電荷蓄積膜64からブロック絶縁膜56を通ってコントロールゲート電極58へのリーク電流を低減することができる。したがって、電荷保持特性の優れたMONOS型不揮発性半導体記憶装置及びその製造方法を提供することができる。
Claims (5)
- 半導体基板上に形成された第1の絶縁膜と
前記第1の絶縁膜上に設けられ、フローティングゲートとして機能する第1の電極と、
前記第1の電極上に設けられ、数分子層の化学量論的組成を有するシリコン窒化膜と数原子層のシリコン膜との交互積層からなり、シリコン濃度に対する窒素濃度の比が0.9以上1.2以下(SiNx:0.9≦x≦1.2)であって化学量論的組成よりもシリコンを過剰に含むシリコン窒化膜と、前記シリコン窒化膜上に形成されたシリコン酸化膜からなる第2の絶縁膜と、
前記第2の絶縁膜上に設けられ、コントロールゲートとして機能する第2の電極と、
前記第1及び第2の電極を挟んで前記半導体基板中に設けられた拡散層と
を具備することを特徴とする半導体記憶装置。 - 前記シリコンを過剰に含むシリコン窒化膜と前記シリコン酸化膜との間のバリアハイトは、少なくとも2.2eVであることを特徴とする請求項1に記載の半導体記憶装置。
- 前記第1の電極と前記第2の絶縁膜との間に設けられた第2のシリコン酸化膜を具備することを特徴とする請求項1又は2に記載の半導体記憶装置。
- 半導体基板上に第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に第1の導電体膜を堆積する工程と、
前記第1の導電体膜をパターニングする工程と、
前記第1の導電体膜上に数分子層の化学量論的組成を有するシリコン窒化膜と数原子層のシリコン膜とを交互に積層して、シリコン濃度に対する窒素濃度の比が0.9以上1.2以下(SiNx:0.9≦x≦1.2)であって化学量論的組成よりもシリコンを過剰に含むシリコン窒化膜を堆積する工程と、
前記シリコンを過剰に含むシリコン窒化膜上にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜上に第2の導電体膜を堆積する工程と、
前記第2の導電体膜、前記シリコン酸化膜、前記シリコンを過剰に含むシリコン窒化膜及び前記第1の導電体膜をパターニングして、前記第2の導電体膜からなるコントロールゲート電極、及び前記第1の導電体膜からなるフローティングゲート電極を積層した積層ゲート電極を形成する工程と、
前記積層ゲート電極を挟んで前記半導体基板中に拡散層を形成する工程と
を具備することを特徴とする半導体記憶装置の製造方法。 - 前記シリコンを過剰に含むシリコン窒化膜中の組成を全膜厚にわたり一様にする工程を具備することを特徴とする、請求項4に記載の半導体記憶装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2006160084A JP4580899B2 (ja) | 2006-06-08 | 2006-06-08 | 半導体記憶装置及びその製造方法 |
US11/808,147 US7928496B2 (en) | 2006-06-08 | 2007-06-07 | Semiconductor memory device and manufacturing method thereof |
US13/050,473 US20110163368A1 (en) | 2006-06-08 | 2011-03-17 | Semiconductor Memory Device and Manufacturing Method Thereof |
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JP2006160084A JP4580899B2 (ja) | 2006-06-08 | 2006-06-08 | 半導体記憶装置及びその製造方法 |
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JP2007329343A JP2007329343A (ja) | 2007-12-20 |
JP4580899B2 true JP4580899B2 (ja) | 2010-11-17 |
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JP (1) | JP4580899B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672829B1 (ko) * | 2005-08-31 | 2007-01-22 | 삼성전자주식회사 | 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법 |
CN101621007A (zh) * | 2008-07-03 | 2010-01-06 | 中芯国际集成电路制造(上海)有限公司 | Sanos存储单元结构 |
US8624260B2 (en) * | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
KR20110120661A (ko) * | 2010-04-29 | 2011-11-04 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 및 그의 제조 방법 |
JP2012009700A (ja) * | 2010-06-25 | 2012-01-12 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP5620426B2 (ja) * | 2012-03-19 | 2014-11-05 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
US10176998B2 (en) * | 2017-04-25 | 2019-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device |
US11588031B2 (en) * | 2019-12-30 | 2023-02-21 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure for memory device and method for forming the same |
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JP2000174149A (ja) * | 1998-12-09 | 2000-06-23 | Toshiba Corp | 不揮発性半導体記憶装置 |
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- 2006-06-08 JP JP2006160084A patent/JP4580899B2/ja not_active Expired - Fee Related
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2007
- 2007-06-07 US US11/808,147 patent/US7928496B2/en not_active Expired - Fee Related
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- 2011-03-17 US US13/050,473 patent/US20110163368A1/en not_active Abandoned
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JP2006005006A (ja) * | 2004-06-15 | 2006-01-05 | Toshiba Corp | 不揮発性半導体メモリ装置 |
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US7928496B2 (en) | 2011-04-19 |
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JP2007329343A (ja) | 2007-12-20 |
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