JP4907999B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4907999B2 JP4907999B2 JP2006012649A JP2006012649A JP4907999B2 JP 4907999 B2 JP4907999 B2 JP 4907999B2 JP 2006012649 A JP2006012649 A JP 2006012649A JP 2006012649 A JP2006012649 A JP 2006012649A JP 4907999 B2 JP4907999 B2 JP 4907999B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- gate electrode
- forming
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 95
- 239000010703 silicon Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 239000007800 oxidant agent Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 23
- 230000001590 oxidative effect Effects 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 91
- 229910052581 Si3N4 Inorganic materials 0.000 description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 26
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 24
- 230000008569 process Effects 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 16
- 230000014759 maintenance of location Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下、本発明の第1の実施形態に係る半導体装置として、電気的に消去可能な不揮発性半導体記憶装置であるNAND型フラッシュメモリを例に説明する。
次に、本発明の第2の実施形態に係る半導体装置(不揮発性メモリ)について説明する。なお、基本的な構造及び基本的な製造方法は第1の実施形態と同様であるため、第1の実施形態で説明した事項については説明を省略する。
13…フローティングゲート電極膜 14…素子分離溝
15…延伸構造 16…シリコン酸窒化膜
16a…シリコン酸窒化膜(第2の絶縁膜)
16b…シリコン酸窒化膜(第3の絶縁膜)
17…トンネル絶縁膜 18…素子分離絶縁膜
19…電極間絶縁膜 21…コントロールゲート電極膜
22…マスク膜 23…ゲート構造
24…ゲート側壁絶縁膜 25…ソース/ドレイン拡散層
26…層間絶縁膜
Claims (3)
- シリコンを含んだ半導体基板上に、第1の誘電率を有し、窒化膜又は金属酸化物膜からなり且つトンネル絶縁膜の一部となる第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に、シリコンを含んだ半導体膜で形成されたフローティングゲート電極膜を形成する工程と、
前記フローティングゲート電極膜、前記第1の絶縁膜及び前記半導体基板をパターニングし、このパターニングによって露出した第1の側面を有する第1の構造を形成する工程と、
前記第1の構造を酸化剤を含む雰囲気に晒す工程と、
前記酸化剤によって前記フローティングゲート電極膜の前記第1の絶縁膜と前記フローティングゲート電極膜との境界に対応した部分を酸化して、前記第1の誘電率よりも低い第2の誘電率を有し且つトンネル絶縁膜の一部となる第2の絶縁膜を形成するとともに、前記酸化剤によって前記半導体基板の前記第1の絶縁膜と前記半導体基板との境界に対応した部分を酸化して、前記第1の誘電率よりも低い第3の誘電率を有し且つトンネル絶縁膜の一部となる第3の絶縁膜を形成する工程と、
前記第1の構造上に電極間絶縁膜を形成する工程と、
前記電極間絶縁膜上にコントロールゲート電極膜を形成する工程と、
前記コントロールゲート電極膜、前記電極間絶縁膜及び前記フローティングゲート電極膜をパターニングして、前記第1の側面に垂直な第2の側面を有する第2の構造を形成する工程と、
を備え、
前記酸化剤は、NOガス、N2Oガス、NO2ガス、又はNH3/O2混合ガスであり、
前記第2の絶縁膜は、厚さ方向に窒素濃度分布を有し前記フローティングゲート電極膜との界面近傍で窒素濃度が高い酸窒化膜で形成されている
ことを特徴とする半導体装置の製造方法。 - シリコンを含んだ半導体基板上に、第1の誘電率を有し、窒化膜又は金属酸化物膜からなり且つトンネル絶縁膜の一部となる第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に、シリコンを含んだ半導体膜で形成されたフローティングゲート電極膜を形成する工程と、
前記フローティングゲート電極膜、前記第1の絶縁膜及び前記半導体基板をパターニングし、このパターニングによって露出した第1の側面を有する第1の構造を形成する工程と、
前記第1の構造上に電極間絶縁膜を形成する工程と、
前記電極間絶縁膜上にコントロールゲート電極膜を形成する工程と、
前記コントロールゲート電極膜、前記電極間絶縁膜及び前記フローティングゲート電極膜をパターニングし、このパターニングによって露出した第2の側面であって前記第1の側面に垂直な第2の側面を有する第2の構造を形成する工程と、
前記第2の構造を酸化剤を含む雰囲気に晒す工程と、
前記酸化剤によって前記フローティングゲート電極膜の前記第1の絶縁膜と前記フローティングゲート電極膜との境界に対応した部分を酸化して、前記第1の誘電率よりも低い第2の誘電率を有し且つトンネル絶縁膜の一部となる第2の絶縁膜を形成するとともに、前記酸化剤によって前記半導体基板の前記第1の絶縁膜と前記半導体基板との境界に対応した部分を酸化して、前記第1の誘電率よりも低い第3の誘電率を有し且つトンネル絶縁膜の一部となる第3の絶縁膜を形成する工程と、
を備え、
前記酸化剤は、NOガス、N2Oガス、NO2ガス、又はNH3/O2混合ガスであり、
前記第2の絶縁膜は、厚さ方向に窒素濃度分布を有し前記フローティングゲート電極膜との界面近傍で窒素濃度が高い酸窒化膜で形成されている
ことを特徴とする半導体装置の製造方法。 - 前記第1の絶縁膜は、前記半導体基板の表面を窒化することで得られた窒化膜で形成されている
ことを特徴とする請求項1又は2に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006012649A JP4907999B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置の製造方法 |
US11/525,118 US7897455B2 (en) | 2006-01-20 | 2006-09-22 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006012649A JP4907999B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007194483A JP2007194483A (ja) | 2007-08-02 |
JP4907999B2 true JP4907999B2 (ja) | 2012-04-04 |
Family
ID=38286068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006012649A Expired - Fee Related JP4907999B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7897455B2 (ja) |
JP (1) | JP4907999B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047729A (ja) * | 2006-08-17 | 2008-02-28 | Toshiba Corp | 半導体記憶装置 |
JP4316605B2 (ja) * | 2006-12-22 | 2009-08-19 | 株式会社東芝 | 不揮発性半導体記憶装置およびその製造方法 |
JP2009152498A (ja) | 2007-12-21 | 2009-07-09 | Toshiba Corp | 不揮発性半導体メモリ |
JP5086800B2 (ja) * | 2007-12-28 | 2012-11-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2011071334A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
US10217794B2 (en) | 2017-05-24 | 2019-02-26 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with vertical capacitors and methods for producing the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065028A (ja) * | 1996-08-23 | 1998-03-06 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JPH10335500A (ja) * | 1997-06-05 | 1998-12-18 | Toshiba Microelectron Corp | 半導体装置の製造方法 |
US6100559A (en) * | 1998-08-14 | 2000-08-08 | Advanced Micro Devices, Inc. | Multipurpose graded silicon oxynitride cap layer |
KR100369236B1 (ko) * | 2000-09-16 | 2003-01-24 | 삼성전자 주식회사 | 바람직한 게이트 프로파일을 갖는 반도체 장치 및 그제조방법 |
EP1253646B1 (en) * | 2001-04-27 | 2011-09-14 | Imec | Insulating barrier for non-volatile memory device |
US7042043B2 (en) * | 2001-08-30 | 2006-05-09 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US6867119B2 (en) * | 2002-10-30 | 2005-03-15 | Advanced Micro Devices, Inc. | Nitrogen oxidation to reduce encroachment |
JP4489359B2 (ja) * | 2003-01-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP3845073B2 (ja) * | 2003-05-27 | 2006-11-15 | 株式会社東芝 | 半導体装置 |
JP2005197624A (ja) * | 2004-01-09 | 2005-07-21 | Genusion:Kk | 不揮発性記憶装置 |
JP2005235987A (ja) * | 2004-02-19 | 2005-09-02 | Toshiba Corp | 半導体記憶装置及び半導体記憶装置の製造方法 |
JP2005285818A (ja) * | 2004-03-26 | 2005-10-13 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4296128B2 (ja) * | 2004-06-23 | 2009-07-15 | 株式会社東芝 | 不揮発性半導体メモリ装置及びその製造方法 |
-
2006
- 2006-01-20 JP JP2006012649A patent/JP4907999B2/ja not_active Expired - Fee Related
- 2006-09-22 US US11/525,118 patent/US7897455B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7897455B2 (en) | 2011-03-01 |
US20070173020A1 (en) | 2007-07-26 |
JP2007194483A (ja) | 2007-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9450108B2 (en) | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell | |
JP5361328B2 (ja) | 不揮発性半導体記憶装置の製造方法 | |
JP2004165553A (ja) | 半導体記憶装置 | |
KR101139556B1 (ko) | 반도체 장치 및 그 제조 방법 | |
US7692233B2 (en) | Semiconductor device and manufacturing method thereof | |
JP2010080646A (ja) | 不揮発性半導体記憶装置 | |
JP5538828B2 (ja) | 半導体装置およびその製造方法 | |
JP2008277530A (ja) | 不揮発性半導体記憶装置 | |
JP4907999B2 (ja) | 半導体装置の製造方法 | |
JP2009054942A (ja) | 不揮発性半導体記憶装置 | |
US8450787B2 (en) | Nonvolatile semiconductor memory and method of manufacturing the same | |
JP2007311721A (ja) | 半導体装置 | |
JP5132330B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
JP2009147135A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
JP5351274B2 (ja) | 不揮発性半導体記憶装置 | |
JP2010027967A (ja) | 不揮発性半導体記憶装置の製造方法 | |
JP2009076635A (ja) | 半導体装置およびその製造方法 | |
JP2006332098A (ja) | 半導体装置およびその製造方法 | |
JP2010123591A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
JP2007067038A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080728 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111213 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120112 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150120 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4907999 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150120 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |