CN102834920B - 低泄漏GaN MOSFET - Google Patents

低泄漏GaN MOSFET Download PDF

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Publication number
CN102834920B
CN102834920B CN201180016639.3A CN201180016639A CN102834920B CN 102834920 B CN102834920 B CN 102834920B CN 201180016639 A CN201180016639 A CN 201180016639A CN 102834920 B CN102834920 B CN 102834920B
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layer
region
barrier layer
algan
metal
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CN102834920A (zh
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J·拉达尼
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National Semiconductor Corp
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National Semiconductor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
CN201180016639.3A 2010-01-30 2011-01-12 低泄漏GaN MOSFET Active CN102834920B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/697,235 2010-01-30
US12/697,235 US8624260B2 (en) 2010-01-30 2010-01-30 Enhancement-mode GaN MOSFET with low leakage current and improved reliability
PCT/US2011/020916 WO2011094059A2 (en) 2010-01-30 2011-01-12 Low leakage gan mosfet

Publications (2)

Publication Number Publication Date
CN102834920A CN102834920A (zh) 2012-12-19
CN102834920B true CN102834920B (zh) 2015-06-10

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CN201180016639.3A Active CN102834920B (zh) 2010-01-30 2011-01-12 低泄漏GaN MOSFET

Country Status (5)

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US (2) US8624260B2 (enExample)
JP (1) JP5730332B2 (enExample)
CN (1) CN102834920B (enExample)
TW (1) TWI546864B (enExample)
WO (1) WO2011094059A2 (enExample)

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US8878188B2 (en) * 2013-02-22 2014-11-04 Translucent, Inc. REO gate dielectric for III-N device on Si substrate
US9178016B2 (en) * 2013-03-01 2015-11-03 Infineon Technologies Austria Ag Charge protection for III-nitride devices
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KR20150085724A (ko) * 2014-01-16 2015-07-24 엘지전자 주식회사 질화물 반도체 소자 및 그 제조 방법
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CN106409901B (zh) * 2016-10-27 2019-10-11 苏州捷芯威半导体有限公司 一种半导体器件及其制备方法
EP3655989A1 (en) * 2017-07-20 2020-05-27 Swegan AB A heterostructure for a high electron mobility transistor and a method of producing the same
CN107634009A (zh) * 2017-08-10 2018-01-26 北京大学深圳研究生院 一种GaN MOS‑HEMT器件及其制备方法
TWI670775B (zh) * 2018-08-27 2019-09-01 世界先進積體電路股份有限公司 半導體裝置結構及其製造方法
CN110875385B (zh) * 2018-09-04 2023-03-17 世界先进积体电路股份有限公司 半导体装置结构及其制造方法
US10651033B1 (en) 2019-01-07 2020-05-12 Vanguard International Semiconductor Corporation Semiconductor device structures and methods for manufacturing the same
TWI851591B (zh) * 2019-08-06 2024-08-11 英商Ｉｑｅ有限公司 分層結構的介電鈍化
CN114270501A (zh) * 2019-08-06 2022-04-01 Iqe公开有限公司 用于层状iii族氮化物结构的电介质钝化
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CN113224155A (zh) * 2021-04-08 2021-08-06 中山大学 一种具有高导通能力的氮化镓晶体管及其制备方法
CN114530496B (zh) * 2022-01-06 2025-06-06 西安电子科技大学 一种改善欧姆接触电阻的N面GaN基p沟道器件及其制备方法
JP7578862B2 (ja) * 2022-03-25 2024-11-06 ヌヴォトンテクノロジージャパン株式会社 半導体装置
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Also Published As

Publication number Publication date
TWI546864B (zh) 2016-08-21
CN102834920A (zh) 2012-12-19
JP5730332B2 (ja) 2015-06-10
JP2013518436A (ja) 2013-05-20
US8624260B2 (en) 2014-01-07
US20110186855A1 (en) 2011-08-04
TW201140701A (en) 2011-11-16
WO2011094059A3 (en) 2011-11-10
US20140094005A1 (en) 2014-04-03
WO2011094059A2 (en) 2011-08-04
US8940593B2 (en) 2015-01-27

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