JP2008227501A - 窒化物ベースのトランジスタのための窒化アルミニウムを含むキャップ層およびその作製方法 - Google Patents
窒化物ベースのトランジスタのための窒化アルミニウムを含むキャップ層およびその作製方法 Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 96
- 150000004767 nitrides Chemical class 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 138
- 238000002161 passivation Methods 0.000 claims abstract description 77
- 229910002601 GaN Inorganic materials 0.000 claims description 77
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 54
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 18
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 239000001301 oxygen Substances 0.000 abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 531
- 239000002019 doping agent Substances 0.000 description 53
- 229910010271 silicon carbide Inorganic materials 0.000 description 50
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 48
- 239000000463 material Substances 0.000 description 32
- 239000011241 protective layer Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 17
- 238000000137 annealing Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- -1 Al x Ga 1-x N Chemical class 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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Abstract
【解決手段】キャップ層がその上に提供されるバリア層から離れたキャップ層の表面近くに高アルミニウム濃度を有する、不均一なアルミニウム濃度のAlGaNベースのキャップ層を含む、高電子移動度トランジスタが提供される。キャップ層がその上に提供されるバリア層から離れたキャップ層の表面近くにドープ領域を有するキャップ層を含む、高電子移動度トランジスタが提供される。ワイドバンドギャップ半導体デバイスのための黒鉛状BN不動態化構造が提供される。III族窒化物半導体デバイスのためのSiC不動態化構造が提供される。不動態化構造の酸素アニールもまた提供される。リセスのないオーミックコンタクトもまた提供される。
【選択図】図1
Description
Claims (36)
- III族窒化物ベースのチャネル層と、
前記チャネル層上のIII族窒化物ベースのバリア層と、
前記バリア層上の多層キャップ層であって、前記バリア層上に窒化アルミニウム(AlN)を含む層を含み、AlNを含む前記層上に窒化ガリウム(GaN)層を含む多層キャップ層と、
前記GaN層上のSiN不動態化層とを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)。 - AlNを含む前記層は、窒化アルミニウムガリウム(AlGaN)、窒化アルミニウムインジウム(AlInN)および/またはAlNを含むことを特徴とする請求項1に記載のHEMT。
- AlNを含む前記層は約3.0から約30.0Åまでの厚さを有することを特徴とする請求項1に記載のHEMT。
- 前記GaN層は、低モル比を有する窒化アルミニウムガリウム(AlGaN)層を含むことを特徴とする請求項1に記載のHEMT。
- 前記AlGaN層のモル比は、前記バリア層のモル比の約ゼロパーセントから前記バリア層の約モル比までであることを特徴とする請求項4に記載のHEMT。
- 前記AlGaN層のモル比は前記バリア層のモル比より大きいことを特徴とする請求項5に記載のHEMT。
- AlNを含む前記層は、高モル比を有する窒化アルミニウムガリウム(AlGaN)層を含むことを特徴とする請求項1に記載のHEMT。
- III族窒化物ベースのチャネル層と、
前記チャネル層上のIII族窒化物ベースのバリア層と、
前記バリア層上の多層キャップ層であって、前記バリア層上に窒化アルミニウムガリウム(AlGaN)層を含み、前記AlGaN層上に窒化アルミニウム(AlN)層を含む多層キャップ層とを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)。 - 前記AlN層は約10Åの厚さを有することを特徴とする請求項8に記載のHEMT。
- 前記多層キャップ層内へリセスしていないゲートコンタクトをさらに含み、前記AlGaN層の厚さは約5.0から約50.0Åまでであることを特徴とする請求項9に記載のHEMT。
- 前記AlN層は、高モル比を有するAlGaN層を含むことを特徴とする請求項8に記載のHEMT。
- III族窒化物ベースのチャネル層と、
前記チャネル層上のIII族窒化物ベースのバリア層と、
前記バリア層上の多層キャップ層であって、前記バリア層上に窒化アルミニウムガリウム(AlGaN)層を、前記AlGaN層上に窒化アルミニウム(AlN)層を、前記AlN層上に窒化ガリウム(GaN)層をそれぞれ含む前記多層キャップ層とを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)。 - 前記AlN層は約10.0Åの厚さを有し、前記GaN層は約20Åの厚さを有することを特徴とする請求項12に記載のHEMT。
- 前記HEMTは約3.0Vより大きいバリアを有することを特徴とする請求項12に記載のHEMT。
- 前記GaN層は、低モル比を有するAlGaN層を含むことを特徴とする請求項12に記載のHEMT。
- 前記AlGaN層のモル比は、前記バリア層のモル比の約ゼロパーセントから前記バリア層の約モル比までであることを特徴とする請求項15に記載のHEMT。
- 前記AlGaN層のモル比は前記バリア層のモル比より大きいことを特徴とする請求項16に記載のHEMT。
- 前記AlN層は、高モル比を有するAlGaN層を含むことを特徴とする請求項12に記載のHEMT。
- III族窒化物ベースのチャネル層を形成するステップと、
前記チャネル層上にIII族窒化物ベースのバリア層を形成するステップと、
前記バリア層上に多層キャップ層を形成するステップであって、前記多層キャップ層は、前記バリア層上に窒化アルミニウム(AlN)を含む層を含み、AlNを含む前記層上に窒化ガリウム(GaN)層を含むステップと、
前記GaN層上にSiN不動態化層を形成するステップとを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)の形成方法。 - AlNを含む前記層を形成するステップは、窒化アルミニウムガリウム(AlGaN)、窒化アルミニウムインジウム(AlInN)および/またはAlNを含む層を形成するステップを含むことを特徴とする請求項19に記載の方法。
- AlNを含む前記層を形成するステップは、約3.0から約30.0Åまでの厚さを有するAlNを含む層を形成するステップを含むことを特徴とする請求項19に記載の方法。
- 前記GaN層を形成するステップは、低モル比を有する窒化アルミニウムガリウム(AlGaN)層を形成するステップを含むことを特徴とする請求項19に記載の方法。
- 前記AlGaN層のモル比は、前記バリア層のモル比の約ゼロパーセントから前記バリア層の約モル比までであることを特徴とする請求項22に記載の方法。
- 前記AlGaN層のモル比は前記バリア層のモル比より大きいことを特徴とする請求項23に記載の方法。
- AlNを含む前記層を形成するステップは、高モル比を有する窒化アルミニウムガリウム(AlGaN)層を形成するステップを含むことを特徴とする請求項19に記載の方法。
- III族窒化物ベースのチャネル層を形成するステップと、
前記チャネル層上にIII族窒化物ベースのバリア層を形成するステップと、
前記バリア層上に多層キャップ層を形成するステップであって、前記多層キャップ層は、前記バリア層上に窒化アルミニウムガリウム(AlGaN)層を含み、前記AlGaN層上に窒化アルミニウム(AlN)層を含むステップとを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)の形成方法。 - 前記AlN層を形成するステップは、約10Åの厚さを有するAlN層を形成するステップを含むことを特徴とする請求項26に記載の方法。
- 前記多層キャップ層内へリセスしないゲートコンタクトを形成するステップをさらに含み、前記AlGaN層を形成するステップは、約5.0から約50.0Åまでの厚さを有するAlGaN層を形成するステップを含むことを特徴とする請求項27に記載の方法。
- 前記AlN層を形成するステップは、高モル比を有するAlGaN層を形成するステップを含むことを特徴とする請求項26に記載の方法。
- III族窒化物ベースのチャネル層を形成するステップと、
前記チャネル層上にIII族窒化物ベースのバリア層を形成するステップと、
前記バリア層上に多層キャップ層を形成するステップであって、前記多層キャップ層は、前記バリア層上に窒化アルミニウムガリウム(AlGaN)層を、前記AlGaN層上に窒化アルミニウム(AlN)層を、前記AlN層上に窒化ガリウム(GaN)層をそれぞれ含むステップとを含むことを特徴とするIII族窒化物高電子移動度トランジスタ(HEMT)の形成方法。 - 前記AlN層を形成するステップは、約10.0Åの厚さを有するAlN層を形成するステップを含み、前記GaN層を形成するステップは、約20Åの厚さを有するGaN層を形成するステップを含むことを特徴とする請求項30に記載の方法。
- 前記HEMTは約3.0Vより大きいバリアを有することを特徴とする請求項30に記載の方法。
- 前記GaN層を形成するステップは、低モル比を有するAlGaN層を形成するステップを含むことを特徴とする請求項30に記載の方法。
- 前記AlGaN層のモル比は、前記バリア層のモル比の約ゼロパーセントから前記バリア層の約モル比までであることを特徴とする請求項33に記載の方法。
- 前記AlGaN層のモル比は前記バリア層のモル比より大きいことを特徴とする請求項34に記載の方法。
- 前記AlN層を形成するステップは、高モル比を有するAlGaN層を形成するステップを含むことを特徴とする請求項30に記載の方法。
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US7709859B2 (en) | 2010-05-04 |
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