JP2013513252A5 - - Google Patents

Download PDF

Info

Publication number
JP2013513252A5
JP2013513252A5 JP2012543225A JP2012543225A JP2013513252A5 JP 2013513252 A5 JP2013513252 A5 JP 2013513252A5 JP 2012543225 A JP2012543225 A JP 2012543225A JP 2012543225 A JP2012543225 A JP 2012543225A JP 2013513252 A5 JP2013513252 A5 JP 2013513252A5
Authority
JP
Japan
Prior art keywords
layer
channel layer
conductivity type
region
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012543225A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013513252A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2010/059374 external-priority patent/WO2011071973A2/en
Publication of JP2013513252A publication Critical patent/JP2013513252A/ja
Publication of JP2013513252A5 publication Critical patent/JP2013513252A5/ja
Pending legal-status Critical Current

Links

JP2012543225A 2009-12-08 2010-12-08 打込みされた側壁を有する半導体デバイスを製造する方法およびそれによって製造されたデバイス Pending JP2013513252A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26752409P 2009-12-08 2009-12-08
US61/267,524 2009-12-08
PCT/US2010/059374 WO2011071973A2 (en) 2009-12-08 2010-12-08 Methods of making semiconductor devices having implanted sidewalls and devices made thereby

Publications (2)

Publication Number Publication Date
JP2013513252A JP2013513252A (ja) 2013-04-18
JP2013513252A5 true JP2013513252A5 (enExample) 2014-01-30

Family

ID=44081165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012543225A Pending JP2013513252A (ja) 2009-12-08 2010-12-08 打込みされた側壁を有する半導体デバイスを製造する方法およびそれによって製造されたデバイス

Country Status (8)

Country Link
US (1) US8466017B2 (enExample)
EP (1) EP2510539A4 (enExample)
JP (1) JP2013513252A (enExample)
KR (1) KR20120091368A (enExample)
CN (1) CN102648514A (enExample)
AU (1) AU2010328256A1 (enExample)
CA (1) CA2780459A1 (enExample)
WO (1) WO2011071973A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
CN103946978B (zh) * 2011-11-24 2017-03-01 夏普株式会社 半导体装置以及电子设备
US8969994B2 (en) 2012-08-14 2015-03-03 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
US9184281B2 (en) * 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US9543290B2 (en) 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
KR101669987B1 (ko) * 2014-12-03 2016-10-27 서강대학교산학협력단 경사 이온 주입을 이용한 실리콘 카바이드 트렌치 모스 장벽 쇼트키 다이오드 및 그의 제조 방법
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US9905645B2 (en) 2016-05-24 2018-02-27 Samsung Electronics Co., Ltd. Vertical field effect transistor having an elongated channel
CN109791951B (zh) * 2016-09-09 2023-08-01 美国联合碳化硅公司 具有改进的阈值电压控制的沟槽垂直jfet
KR102314006B1 (ko) * 2017-09-11 2021-10-18 삼성전자주식회사 수직 전계 트랜지스터 및 이를 포함하는 반도체 장치
CN112909088B (zh) * 2021-01-25 2022-11-08 深圳大学 静电感应晶体管及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247921A (ja) * 1984-05-23 1985-12-07 Toshiba Corp 半導体装置の製造方法
JPS61154029A (ja) * 1984-12-26 1986-07-12 Nec Corp ボロンのド−ピング方法
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
JPH10163313A (ja) * 1996-11-26 1998-06-19 New Japan Radio Co Ltd 半導体装置の製造方法
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US6509240B2 (en) * 2000-05-15 2003-01-21 International Rectifier Corporation Angle implant process for cellular deep trench sidewall doping
US6713351B2 (en) * 2001-03-28 2004-03-30 General Semiconductor, Inc. Double diffused field effect transistor having reduced on-resistance
US6852468B2 (en) 2001-06-12 2005-02-08 Fuji Photo Film Co., Ltd. Positive resist composition
EP1428248B1 (en) * 2001-07-12 2011-11-23 Mississippi State University Method of making transistor topologies in silicon carbide through the use of selective epitaxy
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US20060046392A1 (en) * 2004-08-26 2006-03-02 Manning H M Methods of forming vertical transistor structures
US7355223B2 (en) * 2005-03-04 2008-04-08 Cree, Inc. Vertical junction field effect transistor having an epitaxial gate
US7550787B2 (en) * 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Similar Documents

Publication Publication Date Title
JP2013513252A5 (enExample)
JP2019046908A5 (enExample)
JP5791821B2 (ja) 炭化珪素半導体装置およびその製造方法
JP5560931B2 (ja) 超接合半導体装置の製造方法
TWI544632B (zh) 包含金屬氧化物半導體場效應電晶體（ｍｏｓｆｅｔ）裝置的半導體裝置和製造方法
JP2013508981A5 (enExample)
JP2009516361A5 (enExample)
JP2009542005A5 (enExample)
CN101114583B (zh) 半导体功率器件及其制造工艺
JP2018098324A5 (enExample)
JP2019046909A5 (enExample)
CN103840000A (zh) 具有低密勒电容的金氧半场效应晶体管器件及其制作方法
JP5807597B2 (ja) 半導体装置及び半導体装置の製造方法
TW200524163A (en) Semiconductor device and method for manufacture thereof
JP2013530527A5 (enExample)
CN104201203B (zh) 高耐压ldmos器件及其制造方法
JP2017084839A5 (enExample)
JP2018117070A5 (enExample)
CN102738001B (zh) 具有超级介面的功率晶体管的制作方法
JP6657183B2 (ja) 高ブレークダウンｎ型埋め込み層
JP2010118672A5 (enExample)
JP2012049466A5 (enExample)
CN104810384A (zh) 功率半导体器件及制造方法和截止环
CN106684134A (zh) 一种功率半导体器件及其制作方法
JP2009206145A5 (enExample)