KR20120091368A - 주입된 측벽들을 가지는 반도체 장치들의 제조 방법 및 그에 의해 제조된 장치들 - Google Patents

주입된 측벽들을 가지는 반도체 장치들의 제조 방법 및 그에 의해 제조된 장치들 Download PDF

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KR20120091368A
KR20120091368A KR1020127015489A KR20127015489A KR20120091368A KR 20120091368 A KR20120091368 A KR 20120091368A KR 1020127015489 A KR1020127015489 A KR 1020127015489A KR 20127015489 A KR20127015489 A KR 20127015489A KR 20120091368 A KR20120091368 A KR 20120091368A
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South Korea
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layer
regions
source
channel
channel layer
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English (en)
Korean (ko)
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데이비드 씨. 쉐리단
앤드류 리트노어
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에스에스 에스시 아이피, 엘엘시
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Junction Field-Effect Transistors (AREA)
KR1020127015489A 2009-12-08 2010-12-08 주입된 측벽들을 가지는 반도체 장치들의 제조 방법 및 그에 의해 제조된 장치들 Withdrawn KR20120091368A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26752409P 2009-12-08 2009-12-08
US61/267,524 2009-12-08

Publications (1)

Publication Number Publication Date
KR20120091368A true KR20120091368A (ko) 2012-08-17

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KR1020127015489A Withdrawn KR20120091368A (ko) 2009-12-08 2010-12-08 주입된 측벽들을 가지는 반도체 장치들의 제조 방법 및 그에 의해 제조된 장치들

Country Status (8)

Country Link
US (1) US8466017B2 (enExample)
EP (1) EP2510539A4 (enExample)
JP (1) JP2013513252A (enExample)
KR (1) KR20120091368A (enExample)
CN (1) CN102648514A (enExample)
AU (1) AU2010328256A1 (enExample)
CA (1) CA2780459A1 (enExample)
WO (1) WO2011071973A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160066811A (ko) * 2014-12-03 2016-06-13 서강대학교산학협력단 경사 이온 주입을 이용한 실리콘 카바이드 트렌치 모스 장벽 쇼트키 다이오드 및 그의 제조 방법

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US8338255B2 (en) * 2009-06-19 2012-12-25 Ss Sc Ip, Llc Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9129838B2 (en) * 2011-11-24 2015-09-08 Sharp Kabushiki Kaisha Semiconductor device and electronic apparatus
US8969994B2 (en) 2012-08-14 2015-03-03 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
US9136397B2 (en) * 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
US9184281B2 (en) * 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US9543290B2 (en) 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US9905645B2 (en) 2016-05-24 2018-02-27 Samsung Electronics Co., Ltd. Vertical field effect transistor having an elongated channel
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
KR102314006B1 (ko) 2017-09-11 2021-10-18 삼성전자주식회사 수직 전계 트랜지스터 및 이를 포함하는 반도체 장치
CN112909088B (zh) * 2021-01-25 2022-11-08 深圳大学 静电感应晶体管及其制备方法

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JPS60247921A (ja) * 1984-05-23 1985-12-07 Toshiba Corp 半導体装置の製造方法
JPS61154029A (ja) * 1984-12-26 1986-07-12 Nec Corp ボロンのド−ピング方法
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
JPH10163313A (ja) * 1996-11-26 1998-06-19 New Japan Radio Co Ltd 半導体装置の製造方法
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US6509240B2 (en) * 2000-05-15 2003-01-21 International Rectifier Corporation Angle implant process for cellular deep trench sidewall doping
US6713351B2 (en) * 2001-03-28 2004-03-30 General Semiconductor, Inc. Double diffused field effect transistor having reduced on-resistance
EP1267210B1 (en) 2001-06-12 2018-02-21 FUJIFILM Corporation Positive resist composition
JP4234016B2 (ja) * 2001-07-12 2009-03-04 ミシシッピ・ステイト・ユニバーシティ 選択的エピタキシの使用による、炭化ケイ素におけるセルフアライントランジスタ
JP2004134547A (ja) 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US20060046392A1 (en) * 2004-08-26 2006-03-02 Manning H M Methods of forming vertical transistor structures
US7355223B2 (en) * 2005-03-04 2008-04-08 Cree, Inc. Vertical junction field effect transistor having an epitaxial gate
US7550787B2 (en) * 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160066811A (ko) * 2014-12-03 2016-06-13 서강대학교산학협력단 경사 이온 주입을 이용한 실리콘 카바이드 트렌치 모스 장벽 쇼트키 다이오드 및 그의 제조 방법

Also Published As

Publication number Publication date
AU2010328256A1 (en) 2012-06-21
US20110133212A1 (en) 2011-06-09
WO2011071973A2 (en) 2011-06-16
WO2011071973A3 (en) 2011-10-27
US8466017B2 (en) 2013-06-18
CA2780459A1 (en) 2011-06-16
JP2013513252A (ja) 2013-04-18
EP2510539A4 (en) 2013-07-31
EP2510539A2 (en) 2012-10-17
CN102648514A (zh) 2012-08-22

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