CN102648514A - 制造具有植入侧壁的半导体器件的方法和由其制成的器件 - Google Patents

制造具有植入侧壁的半导体器件的方法和由其制成的器件 Download PDF

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Publication number
CN102648514A
CN102648514A CN2010800553654A CN201080055365A CN102648514A CN 102648514 A CN102648514 A CN 102648514A CN 2010800553654 A CN2010800553654 A CN 2010800553654A CN 201080055365 A CN201080055365 A CN 201080055365A CN 102648514 A CN102648514 A CN 102648514A
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China
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layer
channel layer
implanted
source
doping concentration
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Pending
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CN2010800553654A
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English (en)
Chinese (zh)
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大卫·C·谢里登
安德鲁·里特诺尔
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Pi Co
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SS SC IP LLC
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Publication of CN102648514A publication Critical patent/CN102648514A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
CN2010800553654A 2009-12-08 2010-12-08 制造具有植入侧壁的半导体器件的方法和由其制成的器件 Pending CN102648514A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26752409P 2009-12-08 2009-12-08
US61/267,524 2009-12-08
PCT/US2010/059374 WO2011071973A2 (en) 2009-12-08 2010-12-08 Methods of making semiconductor devices having implanted sidewalls and devices made thereby

Publications (1)

Publication Number Publication Date
CN102648514A true CN102648514A (zh) 2012-08-22

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Family Applications (1)

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CN2010800553654A Pending CN102648514A (zh) 2009-12-08 2010-12-08 制造具有植入侧壁的半导体器件的方法和由其制成的器件

Country Status (8)

Country Link
US (1) US8466017B2 (enExample)
EP (1) EP2510539A4 (enExample)
JP (1) JP2013513252A (enExample)
KR (1) KR20120091368A (enExample)
CN (1) CN102648514A (enExample)
AU (1) AU2010328256A1 (enExample)
CA (1) CA2780459A1 (enExample)
WO (1) WO2011071973A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104599971A (zh) * 2013-10-30 2015-05-06 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN109494253A (zh) * 2017-09-11 2019-03-19 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件

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AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
US9136116B2 (en) * 2011-08-04 2015-09-15 Avogy, Inc. Method and system for formation of P-N junctions in gallium nitride based electronics
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
CN103946978B (zh) * 2011-11-24 2017-03-01 夏普株式会社 半导体装置以及电子设备
US8969994B2 (en) 2012-08-14 2015-03-03 Avogy, Inc. Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back
US8937317B2 (en) 2012-12-28 2015-01-20 Avogy, Inc. Method and system for co-packaging gallium nitride electronics
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
US9136397B2 (en) 2013-05-31 2015-09-15 Infineon Technologies Ag Field-effect semiconductor device
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8947154B1 (en) 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
US9324809B2 (en) 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US9543290B2 (en) 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
KR101669987B1 (ko) * 2014-12-03 2016-10-27 서강대학교산학협력단 경사 이온 주입을 이용한 실리콘 카바이드 트렌치 모스 장벽 쇼트키 다이오드 및 그의 제조 방법
US20160268446A1 (en) * 2015-03-10 2016-09-15 United Silicon Carbide, Inc. Trench vertical jfet with improved threshold voltage control
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
US9905645B2 (en) 2016-05-24 2018-02-27 Samsung Electronics Co., Ltd. Vertical field effect transistor having an elongated channel
WO2018048972A1 (en) * 2016-09-09 2018-03-15 United Silicon Carbide Inc. Trench vertical jfet with improved threshold voltage control
CN112909088B (zh) * 2021-01-25 2022-11-08 深圳大学 静电感应晶体管及其制备方法

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CN1503990A (zh) * 2001-03-28 2004-06-09 ͨ�ð뵼�幫˾ 具有减小导通电阻的双扩散场效应晶体管
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20060220072A1 (en) * 2005-03-04 2006-10-05 Christopher Harris Vertical junction field effect transistor having an epitaxial gate
US20070187715A1 (en) * 2003-09-25 2007-08-16 Zhao Jian H Power junction field effect power transistor with highly vertical channel and uniform channel opening
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

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JPS60247921A (ja) * 1984-05-23 1985-12-07 Toshiba Corp 半導体装置の製造方法
JPS61154029A (ja) * 1984-12-26 1986-07-12 Nec Corp ボロンのド−ピング方法
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
JPH10163313A (ja) * 1996-11-26 1998-06-19 New Japan Radio Co Ltd 半導体装置の製造方法
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US6509240B2 (en) * 2000-05-15 2003-01-21 International Rectifier Corporation Angle implant process for cellular deep trench sidewall doping
EP1267210B1 (en) 2001-06-12 2018-02-21 FUJIFILM Corporation Positive resist composition
WO2003075319A2 (en) * 2001-07-12 2003-09-12 Mississippi State University Self-aligned transistor and diode topologies
JP2004134547A (ja) 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US20060046392A1 (en) * 2004-08-26 2006-03-02 Manning H M Methods of forming vertical transistor structures
US7550787B2 (en) * 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices

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CN1503990A (zh) * 2001-03-28 2004-06-09 ͨ�ð뵼�幫˾ 具有减小导通电阻的双扩散场效应晶体管
US6821834B2 (en) * 2002-12-04 2004-11-23 Yoshiyuki Ando Ion implantation methods and transistor cell layout for fin type transistors
US20070187715A1 (en) * 2003-09-25 2007-08-16 Zhao Jian H Power junction field effect power transistor with highly vertical channel and uniform channel opening
US20060220072A1 (en) * 2005-03-04 2006-10-05 Christopher Harris Vertical junction field effect transistor having an epitaxial gate
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104599971A (zh) * 2013-10-30 2015-05-06 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN104599971B (zh) * 2013-10-30 2018-01-19 英飞凌科技股份有限公司 用于制造竖直半导体器件的方法和竖直半导体器件
CN109494253A (zh) * 2017-09-11 2019-03-19 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件
US10944003B2 (en) 2017-09-11 2021-03-09 Samsung Electronics Co., Ltd. Vertical field effect transistor and semiconductor device including the same
CN109494253B (zh) * 2017-09-11 2021-04-06 三星电子株式会社 垂直场效应晶体管和包括其的半导体器件

Also Published As

Publication number Publication date
JP2013513252A (ja) 2013-04-18
AU2010328256A1 (en) 2012-06-21
EP2510539A2 (en) 2012-10-17
US20110133212A1 (en) 2011-06-09
WO2011071973A2 (en) 2011-06-16
KR20120091368A (ko) 2012-08-17
WO2011071973A3 (en) 2011-10-27
CA2780459A1 (en) 2011-06-16
EP2510539A4 (en) 2013-07-31
US8466017B2 (en) 2013-06-18

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Application publication date: 20120822