JP4234016B2 - 選択的エピタキシの使用による、炭化ケイ素におけるセルフアライントランジスタ - Google Patents
選択的エピタキシの使用による、炭化ケイ素におけるセルフアライントランジスタ Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 117
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 108
- 238000000407 epitaxy Methods 0.000 title description 7
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- 229910000838 Al alloy Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
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- 229910052750 molybdenum Inorganic materials 0.000 description 3
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- 230000004913 activation Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- PDEDQSAFHNADLV-UHFFFAOYSA-M potassium;disodium;dinitrate;nitrite Chemical compound [Na+].[Na+].[K+].[O-]N=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PDEDQSAFHNADLV-UHFFFAOYSA-M 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
この出願は、2001年7月12日に出願された米国仮出願連続番号第60/304,423号の優先権を主張する。その仮出願の全体をここに引用により援用する。
発明の分野
この発明は、航空機搭載および地上レーダシステムにおけるレーダ送信機内の小型で効率のよい電力増幅器といった高速、高パワー用途、および、高電圧DC−DCコンバータおよびインバータといった高パワー密度切換用途のための進化したSiC素子に当てはまる。
縦型SiCパワートランジスタの最も一般的なタイプのうちの2つは、静電誘導トランジスタ(SIT)およびバイポーラ接合トランジスタ(BJT)である。これらの素子を以下により詳細に説明する。
た反応性イオンエッチング(RIE)によって設定されるチャネル領域の幅に非常に敏感である。しかしながら、RIEの後では、素子の上部に高品質のパッシベーション層を形成するには熱酸化を行なうことが普通必要である。このステップ中、側壁の酸化は、SiC表面の平面状のSi面よりも最大で5倍速く起こる可能性があり、結果としてチャネル幅の変動をもたらし、それは精密に制御することが難しい場合がある。さらに、酸化物はゲートトレンチの底および側壁から選択的に除去されなければならず、それは普通、側壁酸化物除去を確実にするためにウェットケミカルエッチングを必要とする。側壁に沿った酸化物のこの選択的な除去は、整列およびプロセス双方の観点からみて非常に困難なステップである。
特定の接触抵抗はドーピングの強力な関数である。Alは約660℃で熔融するが、90:10のAl/Ti合金(重量比)は、SiCへのオーミック接触の形成に使用される典型的なアニール温度である950〜1150℃の温度での固相および液相の混合物である。前出のクロフトンを参照されたい。また、N.ランドバーグ(Lundberg)他「コバルトシリサイドを用いたP型6H−SiCへの熱的に安定した低オーミック接触(Thermally stable Low Ohmic Contacts to P-type 6H-SiC using Cobalt Silicides)」、固体電子工学(Solid St. Elect.)、39、II、1559−1565(1996)、およびクロフトン他「P型SiCへのチタンおよびアルミニウム−チタンのオーミック接触(Titanium and Aluminum-Titanium Ohmic Contacts to P-Type SiC)」、固体電子工学(1997)も参照されたい。
この発明の局面によれば、炭化ケイ素バイポーラ接合トランジスタを作る方法が提供される。この発明のこの局面によれば、このバイポーラ接合トランジスタは、第1の導電型のSiC半導体基板層と、基板層の上に堆積された第1の導電型のSiCドリフト層と、ドリフト層の上に堆積された、第1の導電型とは異なる第2の導電型のSiCベース層と、ベース層の上に堆積された第1の導電型の1つ以上のSiCエミッタ領域とを含む。この発明のこの局面に従った方法は、ベース層の上にSiCエミッタ層を形成するステップを含み、ベース層はドリフト層の上に堆積され、ドリフト層は基板層の上に堆積されており、前記方法はさらに、エミッタ層の上にマスクを位置づけるステップと、マスクの開口部を通してエミッタ層を選択的にエッチングしてベース層を露出し、エッチングされた領域により隔てられた隆起したエミッタ領域を形成するステップと、マスクの開口部を通して、エッチングされた領域に、第2の導電型のSiCの選択的エピタキシャル成長によってSiCベース接触領域を選択的に形成するステップとを含む。
SiCにおける先行技術の素子構造は、セルフアライン構造を形成するために、たとえあるとしても最小限の手法しか利用していない。この発明の発明者たちは、SiC内縦型トランジスタまたはサイリスタの性能を最適化するためにセルフアライン構造が使用可能であることを発見した。この発明に従ったセルフアライン構造は、より低い製造コスト、より低いゲート抵抗、より低いゲート−ソース間およびゲート−ドレイン間キャパシタンス、および増加した速度と効率を可能にする。さらに、ここに開示された縦型トランジスタの設計概念は、その後の高温アニールを必要とする高価なプロセスステップであるイオン注入の使用を必要としない。
なる導電型を有する領域20が形成される。たとえば、ドリフト層がn型であれば、この発明に従ったマスク16の開口部18を通した選択的イオン注入を用いて、p型の領域がそこに選択的に形成可能である。
36を用いて、ソース機構47間のエッチングされた窪みにゲート領域48を選択的に成長させる。ゲート領域は、たとえばエピタキシャル成長プロセス(たとえばCVDエピタキシ)を用いて選択的に成長可能である。
たは、これに代えて、p+エピタキシャル層がpnp素子の薄いn-ベース層上に成長可能である。これにより、SiCをエッチバックする必要なく、エミッタの下の薄いベース領域に接触し、このためおそらく薄いベース領域内へまたは薄いベース領域を貫通してエッチングすることが可能となる。
よびガードリング138を選択的に再成長させるために用いるマスク140も示されている。
Claims (2)
- 第1の導電型のSiC半導体基板層と、基板層の上に堆積された第1の導電型のSiCドリフト層と、ドリフト層の上に堆積された、第1の導電型とは異なる第2の導電型のSiCベース層と、ベース層の上に堆積された第1の導電型の1つ以上のSiCエミッタ領域とを含む炭化ケイ素バイポーラ接合トランジスタを作る方法であって、
ベース層の上にSiCエミッタ層を形成するステップを含み、ベース層はドリフト層の上に堆積され、ドリフト層は基板層の上に堆積されており、前記方法はさらに、
エミッタ層の上にマスクを位置づけるステップと、
マスクの開口部を通してエミッタ層を選択的にエッチングしてベース層を露出し、エッチングされた領域により隔てられた隆起したエミッタ領域を形成するステップと、
マスクの開口部を通して、エッチングされた領域に、第2の導電型のSiCの選択的エピタキシャル成長によってSiCベース接触領域を選択的に形成するステップとを含む、方法。 - 請求項1の方法によって作られる、SiCバイポーラ接合トランジスタ。
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US30442301P | 2001-07-12 | 2001-07-12 | |
PCT/US2002/022281 WO2003075319A2 (en) | 2001-07-12 | 2002-07-12 | Self-aligned transistor and diode topologies |
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US (1) | US6767783B2 (ja) |
EP (1) | EP1428248B1 (ja) |
JP (2) | JP4234016B2 (ja) |
AT (1) | ATE535010T1 (ja) |
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US6759308B2 (en) * | 2001-07-10 | 2004-07-06 | Advanced Micro Devices, Inc. | Silicon on insulator field effect transistor with heterojunction gate |
US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
US6982440B2 (en) * | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
US6815304B2 (en) * | 2002-02-22 | 2004-11-09 | Semisouth Laboratories, Llc | Silicon carbide bipolar junction transistor with overgrown base region |
US6855970B2 (en) * | 2002-03-25 | 2005-02-15 | Kabushiki Kaisha Toshiba | High-breakdown-voltage semiconductor device |
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2002
- 2002-07-12 EP EP02806537A patent/EP1428248B1/en not_active Expired - Lifetime
- 2002-07-12 JP JP2003573679A patent/JP4234016B2/ja not_active Expired - Fee Related
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JP2005520322A (ja) | 2005-07-07 |
AU2002367561A8 (en) | 2003-09-16 |
EP1428248A4 (en) | 2007-03-28 |
ATE535010T1 (de) | 2011-12-15 |
US6767783B2 (en) | 2004-07-27 |
WO2003075319A2 (en) | 2003-09-12 |
JP2009049426A (ja) | 2009-03-05 |
US20030034495A1 (en) | 2003-02-20 |
WO2003075319A3 (en) | 2004-02-12 |
AU2002367561A1 (en) | 2003-09-16 |
EP1428248A2 (en) | 2004-06-16 |
EP1428248B1 (en) | 2011-11-23 |
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