DE60040812D1 - Herstellungsverfahren für einen Bipolar-Transistor und ein MISFET Halbleiter Bauelement - Google Patents

Herstellungsverfahren für einen Bipolar-Transistor und ein MISFET Halbleiter Bauelement

Info

Publication number
DE60040812D1
DE60040812D1 DE60040812T DE60040812T DE60040812D1 DE 60040812 D1 DE60040812 D1 DE 60040812D1 DE 60040812 T DE60040812 T DE 60040812T DE 60040812 T DE60040812 T DE 60040812T DE 60040812 D1 DE60040812 D1 DE 60040812D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
bipolar transistor
misfet semiconductor
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60040812T
Other languages
English (en)
Inventor
Akira Asai
Teruhito Oonishi
Takeshi Takagi
Tohru Saitho
Yoshihiro Hara
Koichiro Yuki
Katsuya Nozawa
Yoshihiko Kanzawa
Koji Katayama
Yo Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE60040812D1 publication Critical patent/DE60040812D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
DE60040812T 1999-03-15 2000-03-14 Herstellungsverfahren für einen Bipolar-Transistor und ein MISFET Halbleiter Bauelement Expired - Lifetime DE60040812D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6814799 1999-03-15

Publications (1)

Publication Number Publication Date
DE60040812D1 true DE60040812D1 (de) 2008-12-24

Family

ID=13365348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040812T Expired - Lifetime DE60040812D1 (de) 1999-03-15 2000-03-14 Herstellungsverfahren für einen Bipolar-Transistor und ein MISFET Halbleiter Bauelement

Country Status (6)

Country Link
US (2) US6455364B1 (de)
EP (2) EP1037284A3 (de)
KR (1) KR100630110B1 (de)
CN (1) CN1215569C (de)
DE (1) DE60040812D1 (de)
TW (1) TW460978B (de)

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DE60040812D1 (de) * 1999-03-15 2008-12-24 Matsushita Electric Ind Co Ltd Herstellungsverfahren für einen Bipolar-Transistor und ein MISFET Halbleiter Bauelement
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FR2835652B1 (fr) 2002-02-04 2005-04-15 St Microelectronics Sa Procede de fabrication d'un circuit integre comportant des transistors bipolaires, en particulier a heterojonction si/sige, et des transistors a effet de champ a grilles isolees, et circuit integre correspondant
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KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
DE10318422B4 (de) * 2003-04-23 2006-08-10 Infineon Technologies Ag Hochfrequenz-Bipolartransistor mit Silizidregion und Verfahren zur Herstellung desselben
US6982433B2 (en) 2003-06-12 2006-01-03 Intel Corporation Gate-induced strain for MOS performance improvement
US6974733B2 (en) * 2003-06-16 2005-12-13 Intel Corporation Double-gate transistor with enhanced carrier mobility
US7138668B2 (en) * 2003-07-30 2006-11-21 Nissan Motor Co., Ltd. Heterojunction diode with reduced leakage current
US7910448B2 (en) * 2004-01-23 2011-03-22 Nxp B.V. Method for fabricating a mono-crystalline emitter
DE102004017166B4 (de) * 2004-04-01 2007-10-11 Atmel Germany Gmbh Verfahren zur Herstellung von Bipolar-Transistoren
DE102004053394B4 (de) 2004-11-05 2010-08-19 Atmel Automotive Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
JP2006186235A (ja) * 2004-12-28 2006-07-13 Renesas Technology Corp 半導体装置及びその製造方法
US7314799B2 (en) * 2005-12-05 2008-01-01 Semisouth Laboratories, Inc. Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
CN101326621B (zh) * 2005-12-13 2010-06-16 Nxp股份有限公司 在结处具有绝缘层的场效应晶体管结构
US8026146B2 (en) * 2006-08-31 2011-09-27 Nxp B.V. Method of manufacturing a bipolar transistor
US7892910B2 (en) 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
US7598539B2 (en) * 2007-06-01 2009-10-06 Infineon Technologies Ag Heterojunction bipolar transistor and method for making same
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US8129234B2 (en) * 2009-09-09 2012-03-06 International Business Machines Corporation Method of forming bipolar transistor integrated with metal gate CMOS devices
EP2315238B1 (de) * 2009-10-26 2012-06-20 Nxp B.V. Bipolarer Heteroübergangstransistor
CN102117749B (zh) * 2009-12-31 2012-07-11 上海华虹Nec电子有限公司 双极晶体管的集电区和集电区埋层的制造工艺方法
CN102402125A (zh) * 2010-09-16 2012-04-04 上海华虹Nec电子有限公司 用于制造锗硅碳器件中的光刻标记结构及其制备方法
US20120313146A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Transistor and method of forming the transistor so as to have reduced base resistance
KR101682320B1 (ko) * 2012-10-31 2016-12-05 샤프 가부시키가이샤 일렉트로루미네센스 기판 및 그 제조 방법, 일렉트로루미네센스 표시 패널, 일렉트로루미네센스 표시 장치
CN104425244B (zh) * 2013-08-20 2017-02-15 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管制造方法
CN108054096B (zh) * 2017-12-21 2020-08-28 南京溧水高新创业投资管理有限公司 双极晶体管的制作方法
JP2020120080A (ja) * 2019-01-28 2020-08-06 株式会社村田製作所 半導体素子
CN111933796B (zh) * 2020-09-29 2020-12-18 杭州未名信科科技有限公司 一种阻变式存储器及其制造方法

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Also Published As

Publication number Publication date
EP1037284A3 (de) 2002-10-30
CN1215569C (zh) 2005-08-17
CN1267916A (zh) 2000-09-27
US6713790B2 (en) 2004-03-30
US6455364B1 (en) 2002-09-24
US20020197809A1 (en) 2002-12-26
EP1710842A1 (de) 2006-10-11
EP1710842B1 (de) 2008-11-12
KR20000076855A (ko) 2000-12-26
TW460978B (en) 2001-10-21
KR100630110B1 (ko) 2006-09-27
EP1037284A2 (de) 2000-09-20

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8364 No opposition during term of opposition