DE69935495D1 - Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben - Google Patents
Herstellungsverfahren für vergrabene Kanäle und Hohlräume in HalbleiterscheibenInfo
- Publication number
- DE69935495D1 DE69935495D1 DE69935495T DE69935495T DE69935495D1 DE 69935495 D1 DE69935495 D1 DE 69935495D1 DE 69935495 T DE69935495 T DE 69935495T DE 69935495 T DE69935495 T DE 69935495T DE 69935495 D1 DE69935495 D1 DE 69935495D1
- Authority
- DE
- Germany
- Prior art keywords
- cavities
- manufacturing process
- semiconductor wafers
- buried channels
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/0338—Channels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
- B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99830255A EP1049157B1 (de) | 1999-04-29 | 1999-04-29 | Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69935495D1 true DE69935495D1 (de) | 2007-04-26 |
DE69935495T2 DE69935495T2 (de) | 2007-11-29 |
Family
ID=8243381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69935495T Expired - Lifetime DE69935495T2 (de) | 1999-04-29 | 1999-04-29 | Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben |
Country Status (3)
Country | Link |
---|---|
US (1) | US6376291B1 (de) |
EP (1) | EP1049157B1 (de) |
DE (1) | DE69935495T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1077475A3 (de) * | 1999-08-11 | 2003-04-02 | Applied Materials, Inc. | Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil |
DE60032113T2 (de) * | 2000-02-11 | 2007-06-28 | Stmicroelectronics S.R.L., Agrate Brianza | Integrierte Vorrichtung zur mikrofluidischen Temperaturregelung und dessen Herstellungsverfahren |
US7732192B2 (en) * | 2000-02-29 | 2010-06-08 | Stmicroelectronics S.R.L. | Integrated chemical microreactor with large area channels and manufacturing process thereof |
US7230315B2 (en) * | 2000-02-29 | 2007-06-12 | Stmicroelectronics S.R.L. | Integrated chemical microreactor with large area channels and manufacturing process thereof |
US7452713B2 (en) | 2000-02-29 | 2008-11-18 | Stmicroelectronics S.R.L. | Process for manufacturing a microfluidic device with buried channels |
EP1161985B1 (de) | 2000-06-05 | 2005-10-26 | STMicroelectronics S.r.l. | Verfahren zur Herstellung integrierter chemischer Mikroreaktoren aus Halbleitermaterial sowie integrierter Mikroreaktor |
US7294536B2 (en) * | 2000-07-25 | 2007-11-13 | Stmicroelectronics S.R.L. | Process for manufacturing an SOI wafer by annealing and oxidation of buried channels |
DE60032772T2 (de) | 2000-09-27 | 2007-11-08 | Stmicroelectronics S.R.L., Agrate Brianza | Integrierter chemischer Mikroreaktor mit thermisch isolierten Messelektroden und Verfahren zu dessen Herstellung |
US6727479B2 (en) | 2001-04-23 | 2004-04-27 | Stmicroelectronics S.R.L. | Integrated device based upon semiconductor technology, in particular chemical microreactor |
US6541834B1 (en) * | 2001-10-09 | 2003-04-01 | Integrated Crystal Technology Corp. | Silicon pressure micro-sensing device and the fabrication process |
ITTO20020809A1 (it) | 2002-09-17 | 2004-03-18 | St Microelectronics Srl | Micropompa, in particolare per un dispositivo integrato di analisi del dna. |
ITTO20020808A1 (it) * | 2002-09-17 | 2004-03-18 | St Microelectronics Srl | Dispositivo integrato di analisi del dna. |
EP1427011B1 (de) * | 2002-12-04 | 2008-09-10 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von Mikrokanälen in einer integretierten Struktur |
DE10302676A1 (de) * | 2003-01-24 | 2004-07-29 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
EP1535665A1 (de) * | 2003-11-28 | 2005-06-01 | STMicroelectronics S.r.l. | Integrierter chemischer Mikroreaktor mit separaten Kanälen zum Einschliessen von Flüssigkeiten und Verfahren zu dessen Herstellung |
EP1541991A1 (de) * | 2003-12-12 | 2005-06-15 | STMicroelectronics S.r.l. | Integrierter chemischer Reaktor aus Halbleitermaterial zur Echtzeit-Überwachung von biologischen Reaktionen |
DE102004036035B4 (de) * | 2003-12-16 | 2015-10-15 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor |
EP1544163B1 (de) * | 2003-12-16 | 2021-02-24 | Robert Bosch GmbH | Verfahren zur Herstellung eines Membransensors und entsprechender Membransensor |
US20050161327A1 (en) * | 2003-12-23 | 2005-07-28 | Michele Palmieri | Microfluidic device and method for transporting electrically charged substances through a microchannel of a microfluidic device |
EP1547688A1 (de) * | 2003-12-23 | 2005-06-29 | STMicroelectronics S.r.l. | Vorrichtung und Verfahren zur lokalen Konzentrierung von geladenen Substanzen in einer mikrofluidischen Vorrichtung |
EP1617178B1 (de) * | 2004-07-12 | 2017-04-12 | STMicroelectronics Srl | Mikroelektromechanische Struktur mit elektrisch isolierten Gebieten und Verfahren zu ihrer Herstellung |
EP1618955B1 (de) | 2004-07-19 | 2010-12-22 | STMicroelectronics Srl | Vorrichtung zur Detektion von biologischen Molekülen mit erhöhter Detektionsgeschwindigkeit und Verfahren zur schnellen Detektion von Biomolekülen |
EP1719993A1 (de) * | 2005-05-06 | 2006-11-08 | STMicroelectronics S.r.l. | Integrierter Differenzdrucksensor und Verfahren zu dessen Herstellung |
US8097222B2 (en) * | 2005-05-12 | 2012-01-17 | Stmicroelectronics, S.R.L. | Microfluidic device with integrated micropump, in particular biochemical microreactor, and manufacturing method thereof |
US7731341B2 (en) | 2005-09-07 | 2010-06-08 | Eastman Kodak Company | Continuous fluid jet ejector with anisotropically etched fluid chambers |
EP2032255B1 (de) * | 2006-06-23 | 2010-11-10 | STMicroelectronics Srl | Anordnung einer mikrofluidvorrichtung zur analyse von biologischem material |
EP2291545B1 (de) | 2008-06-14 | 2013-05-08 | Veredus Laboratories Pte Ltd | Influenza-sequenzen |
JP5933289B2 (ja) | 2012-02-23 | 2016-06-08 | 三菱電機株式会社 | Soiウエハおよびその製造方法 |
US10461152B2 (en) | 2017-07-10 | 2019-10-29 | Globalfoundries Inc. | Radio frequency switches with air gap structures |
US10833153B2 (en) | 2017-09-13 | 2020-11-10 | Globalfoundries Inc. | Switch with local silicon on insulator (SOI) and deep trench isolation |
US10446643B2 (en) * | 2018-01-22 | 2019-10-15 | Globalfoundries Inc. | Sealed cavity structures with a planar surface |
US11410872B2 (en) | 2018-11-30 | 2022-08-09 | Globalfoundries U.S. Inc. | Oxidized cavity structures within and under semiconductor devices |
US10923577B2 (en) | 2019-01-07 | 2021-02-16 | Globalfoundries U.S. Inc. | Cavity structures under shallow trench isolation regions |
US11127816B2 (en) | 2020-02-14 | 2021-09-21 | Globalfoundries U.S. Inc. | Heterojunction bipolar transistors with one or more sealed airgap |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4685198A (en) * | 1985-07-25 | 1987-08-11 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing isolated semiconductor devices |
US4771638A (en) * | 1985-09-30 | 1988-09-20 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor |
US4993143A (en) * | 1989-03-06 | 1991-02-19 | Delco Electronics Corporation | Method of making a semiconductive structure useful as a pressure sensor |
EP0890998A1 (de) * | 1997-07-07 | 1999-01-13 | STMicroelectronics S.r.l. | Herstellungsverfahren und integrierter piezoresistiver Drucksensor mit einem Diaphragma aus polykristallinem Halbleitermaterial |
US5932396A (en) * | 1996-10-18 | 1999-08-03 | Tdk Corporation | Method for forming magnetic poles in thin film magnetic heads |
-
1999
- 1999-04-29 EP EP99830255A patent/EP1049157B1/de not_active Expired - Lifetime
- 1999-04-29 DE DE69935495T patent/DE69935495T2/de not_active Expired - Lifetime
-
2000
- 2000-04-25 US US09/558,959 patent/US6376291B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69935495T2 (de) | 2007-11-29 |
US6376291B1 (en) | 2002-04-23 |
EP1049157A1 (de) | 2000-11-02 |
EP1049157B1 (de) | 2007-03-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |