DE69935495D1 - Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben - Google Patents

Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben

Info

Publication number
DE69935495D1
DE69935495D1 DE69935495T DE69935495T DE69935495D1 DE 69935495 D1 DE69935495 D1 DE 69935495D1 DE 69935495 T DE69935495 T DE 69935495T DE 69935495 T DE69935495 T DE 69935495T DE 69935495 D1 DE69935495 D1 DE 69935495D1
Authority
DE
Germany
Prior art keywords
cavities
manufacturing process
semiconductor wafers
buried channels
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935495T
Other languages
English (en)
Other versions
DE69935495T2 (de
Inventor
Gabriele Barlocchi
Flavio Villa
Pietro Corona
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69935495D1 publication Critical patent/DE69935495D1/de
Publication of DE69935495T2 publication Critical patent/DE69935495T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047Cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/764Air gaps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0315Cavities
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0323Grooves
    • B81B2203/0338Channels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176Chemical vapour Deposition
    • B81C2201/0177Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
DE69935495T 1999-04-29 1999-04-29 Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben Expired - Lifetime DE69935495T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830255A EP1049157B1 (de) 1999-04-29 1999-04-29 Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben

Publications (2)

Publication Number Publication Date
DE69935495D1 true DE69935495D1 (de) 2007-04-26
DE69935495T2 DE69935495T2 (de) 2007-11-29

Family

ID=8243381

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935495T Expired - Lifetime DE69935495T2 (de) 1999-04-29 1999-04-29 Herstellungsverfahren für vergrabene Kanäle und Hohlräume in Halbleiterscheiben

Country Status (3)

Country Link
US (1) US6376291B1 (de)
EP (1) EP1049157B1 (de)
DE (1) DE69935495T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1077475A3 (de) * 1999-08-11 2003-04-02 Applied Materials, Inc. Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil
DE60032113T2 (de) * 2000-02-11 2007-06-28 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Vorrichtung zur mikrofluidischen Temperaturregelung und dessen Herstellungsverfahren
US7732192B2 (en) * 2000-02-29 2010-06-08 Stmicroelectronics S.R.L. Integrated chemical microreactor with large area channels and manufacturing process thereof
US7230315B2 (en) * 2000-02-29 2007-06-12 Stmicroelectronics S.R.L. Integrated chemical microreactor with large area channels and manufacturing process thereof
US7452713B2 (en) 2000-02-29 2008-11-18 Stmicroelectronics S.R.L. Process for manufacturing a microfluidic device with buried channels
EP1161985B1 (de) 2000-06-05 2005-10-26 STMicroelectronics S.r.l. Verfahren zur Herstellung integrierter chemischer Mikroreaktoren aus Halbleitermaterial sowie integrierter Mikroreaktor
US7294536B2 (en) * 2000-07-25 2007-11-13 Stmicroelectronics S.R.L. Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
DE60032772T2 (de) 2000-09-27 2007-11-08 Stmicroelectronics S.R.L., Agrate Brianza Integrierter chemischer Mikroreaktor mit thermisch isolierten Messelektroden und Verfahren zu dessen Herstellung
US6727479B2 (en) 2001-04-23 2004-04-27 Stmicroelectronics S.R.L. Integrated device based upon semiconductor technology, in particular chemical microreactor
US6541834B1 (en) * 2001-10-09 2003-04-01 Integrated Crystal Technology Corp. Silicon pressure micro-sensing device and the fabrication process
ITTO20020809A1 (it) 2002-09-17 2004-03-18 St Microelectronics Srl Micropompa, in particolare per un dispositivo integrato di analisi del dna.
ITTO20020808A1 (it) * 2002-09-17 2004-03-18 St Microelectronics Srl Dispositivo integrato di analisi del dna.
EP1427011B1 (de) * 2002-12-04 2008-09-10 STMicroelectronics S.r.l. Verfahren zur Herstellung von Mikrokanälen in einer integretierten Struktur
DE10302676A1 (de) * 2003-01-24 2004-07-29 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
EP1535665A1 (de) * 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Integrierter chemischer Mikroreaktor mit separaten Kanälen zum Einschliessen von Flüssigkeiten und Verfahren zu dessen Herstellung
EP1541991A1 (de) * 2003-12-12 2005-06-15 STMicroelectronics S.r.l. Integrierter chemischer Reaktor aus Halbleitermaterial zur Echtzeit-Überwachung von biologischen Reaktionen
DE102004036035B4 (de) * 2003-12-16 2015-10-15 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein Halbleiterbauelement, insbesondere ein Membransensor
EP1544163B1 (de) * 2003-12-16 2021-02-24 Robert Bosch GmbH Verfahren zur Herstellung eines Membransensors und entsprechender Membransensor
US20050161327A1 (en) * 2003-12-23 2005-07-28 Michele Palmieri Microfluidic device and method for transporting electrically charged substances through a microchannel of a microfluidic device
EP1547688A1 (de) * 2003-12-23 2005-06-29 STMicroelectronics S.r.l. Vorrichtung und Verfahren zur lokalen Konzentrierung von geladenen Substanzen in einer mikrofluidischen Vorrichtung
EP1617178B1 (de) * 2004-07-12 2017-04-12 STMicroelectronics Srl Mikroelektromechanische Struktur mit elektrisch isolierten Gebieten und Verfahren zu ihrer Herstellung
EP1618955B1 (de) 2004-07-19 2010-12-22 STMicroelectronics Srl Vorrichtung zur Detektion von biologischen Molekülen mit erhöhter Detektionsgeschwindigkeit und Verfahren zur schnellen Detektion von Biomolekülen
EP1719993A1 (de) * 2005-05-06 2006-11-08 STMicroelectronics S.r.l. Integrierter Differenzdrucksensor und Verfahren zu dessen Herstellung
US8097222B2 (en) * 2005-05-12 2012-01-17 Stmicroelectronics, S.R.L. Microfluidic device with integrated micropump, in particular biochemical microreactor, and manufacturing method thereof
US7731341B2 (en) 2005-09-07 2010-06-08 Eastman Kodak Company Continuous fluid jet ejector with anisotropically etched fluid chambers
EP2032255B1 (de) * 2006-06-23 2010-11-10 STMicroelectronics Srl Anordnung einer mikrofluidvorrichtung zur analyse von biologischem material
EP2291545B1 (de) 2008-06-14 2013-05-08 Veredus Laboratories Pte Ltd Influenza-sequenzen
JP5933289B2 (ja) 2012-02-23 2016-06-08 三菱電機株式会社 Soiウエハおよびその製造方法
US10461152B2 (en) 2017-07-10 2019-10-29 Globalfoundries Inc. Radio frequency switches with air gap structures
US10833153B2 (en) 2017-09-13 2020-11-10 Globalfoundries Inc. Switch with local silicon on insulator (SOI) and deep trench isolation
US10446643B2 (en) * 2018-01-22 2019-10-15 Globalfoundries Inc. Sealed cavity structures with a planar surface
US11410872B2 (en) 2018-11-30 2022-08-09 Globalfoundries U.S. Inc. Oxidized cavity structures within and under semiconductor devices
US10923577B2 (en) 2019-01-07 2021-02-16 Globalfoundries U.S. Inc. Cavity structures under shallow trench isolation regions
US11127816B2 (en) 2020-02-14 2021-09-21 Globalfoundries U.S. Inc. Heterojunction bipolar transistors with one or more sealed airgap

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4685198A (en) * 1985-07-25 1987-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing isolated semiconductor devices
US4771638A (en) * 1985-09-30 1988-09-20 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor
US4993143A (en) * 1989-03-06 1991-02-19 Delco Electronics Corporation Method of making a semiconductive structure useful as a pressure sensor
EP0890998A1 (de) * 1997-07-07 1999-01-13 STMicroelectronics S.r.l. Herstellungsverfahren und integrierter piezoresistiver Drucksensor mit einem Diaphragma aus polykristallinem Halbleitermaterial
US5932396A (en) * 1996-10-18 1999-08-03 Tdk Corporation Method for forming magnetic poles in thin film magnetic heads

Also Published As

Publication number Publication date
DE69935495T2 (de) 2007-11-29
US6376291B1 (en) 2002-04-23
EP1049157A1 (de) 2000-11-02
EP1049157B1 (de) 2007-03-14

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