DE60042045D1 - Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren - Google Patents

Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren

Info

Publication number
DE60042045D1
DE60042045D1 DE60042045T DE60042045T DE60042045D1 DE 60042045 D1 DE60042045 D1 DE 60042045D1 DE 60042045 T DE60042045 T DE 60042045T DE 60042045 T DE60042045 T DE 60042045T DE 60042045 D1 DE60042045 D1 DE 60042045D1
Authority
DE
Germany
Prior art keywords
manufacturing methods
bipolar transistors
heterojunction bipolar
corresponding manufacturing
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042045T
Other languages
English (en)
Inventor
Takeshi Takagi
Koichiro Yuki
Kenji Toyoda
Yoshihiko Kanzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60042045D1 publication Critical patent/DE60042045D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE60042045T 1999-06-22 2000-06-21 Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren Expired - Lifetime DE60042045D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17504699 1999-06-22

Publications (1)

Publication Number Publication Date
DE60042045D1 true DE60042045D1 (de) 2009-06-04

Family

ID=15989290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042045T Expired - Lifetime DE60042045D1 (de) 1999-06-22 2000-06-21 Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren

Country Status (3)

Country Link
US (3) US6492711B1 (de)
EP (2) EP1965431A2 (de)
DE (1) DE60042045D1 (de)

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JP3546169B2 (ja) * 2000-05-26 2004-07-21 三菱重工業株式会社 半導体装置及びその製造方法
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US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
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US6617619B1 (en) * 2002-02-04 2003-09-09 Newport Fab, Llc Structure for a selective epitaxial HBT emitter
US6759674B2 (en) 2002-02-04 2004-07-06 Newport Fab, Llc Band gap compensated HBT
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JP4223002B2 (ja) * 2002-04-26 2009-02-12 インターナショナル・ビジネス・マシーンズ・コーポレーション シリコン・ゲルマニウム・ヘテロ接合型バイポーラ・トランジスタ
JP4391069B2 (ja) * 2002-04-30 2009-12-24 富士通マイクロエレクトロニクス株式会社 ヘテロバイポーラトランジスタおよびその製造方法
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JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6699765B1 (en) * 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
JP3507830B1 (ja) 2002-10-04 2004-03-15 松下電器産業株式会社 半導体装置
JP3643100B2 (ja) 2002-10-04 2005-04-27 松下電器産業株式会社 半導体装置
JP3959695B2 (ja) 2003-01-14 2007-08-15 松下電器産業株式会社 半導体集積回路
US7989844B2 (en) * 2003-02-18 2011-08-02 Nxp B.V. Semiconductor device and method of manufacturing such a device
CN100437970C (zh) * 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
JP4714422B2 (ja) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
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US20040235228A1 (en) * 2003-05-22 2004-11-25 Chidambaram Pr. System and method for depositing a graded carbon layer to enhance critical layer stability
DE10341806B4 (de) * 2003-09-10 2008-11-06 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors
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US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US8501594B2 (en) * 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
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DE102004037252A1 (de) * 2004-07-31 2006-03-23 Atmel Germany Gmbh Verfahren zur Integration von drei Bipolartransistoren in einem Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung
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CN102931079A (zh) * 2011-08-09 2013-02-13 上海华虹Nec电子有限公司 一种锗硅异质结双极晶体管的制造方法
CN103165667B (zh) * 2011-12-09 2016-06-08 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp三极管及制作方法
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Also Published As

Publication number Publication date
US20020158313A1 (en) 2002-10-31
US20020192918A1 (en) 2002-12-19
EP1965431A2 (de) 2008-09-03
US6492711B1 (en) 2002-12-10
EP1065728A3 (de) 2001-08-08
EP1065728B1 (de) 2009-04-22
EP1065728A2 (de) 2001-01-03
US6674150B2 (en) 2004-01-06
US6821870B2 (en) 2004-11-23

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