DE60134066D1 - Gaszuführungsvorrichtung für Halbleiterfertigungsgerät und Halbleiterfertigungsgerät - Google Patents

Gaszuführungsvorrichtung für Halbleiterfertigungsgerät und Halbleiterfertigungsgerät

Info

Publication number
DE60134066D1
DE60134066D1 DE60134066T DE60134066T DE60134066D1 DE 60134066 D1 DE60134066 D1 DE 60134066D1 DE 60134066 T DE60134066 T DE 60134066T DE 60134066 T DE60134066 T DE 60134066T DE 60134066 D1 DE60134066 D1 DE 60134066D1
Authority
DE
Germany
Prior art keywords
semiconductor manufacturing
manufacturing device
gas supply
supply device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60134066T
Other languages
English (en)
Inventor
Akira Kuibira
Hirohiko Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE60134066D1 publication Critical patent/DE60134066D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
DE60134066T 2000-01-20 2001-01-19 Gaszuführungsvorrichtung für Halbleiterfertigungsgerät und Halbleiterfertigungsgerät Expired - Lifetime DE60134066D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000011862 2000-01-20
JP2000160722A JP3654142B2 (ja) 2000-01-20 2000-05-30 半導体製造装置用ガスシャワー体

Publications (1)

Publication Number Publication Date
DE60134066D1 true DE60134066D1 (de) 2008-07-03

Family

ID=26583861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60134066T Expired - Lifetime DE60134066D1 (de) 2000-01-20 2001-01-19 Gaszuführungsvorrichtung für Halbleiterfertigungsgerät und Halbleiterfertigungsgerät

Country Status (6)

Country Link
US (1) US6460482B1 (de)
EP (1) EP1119016B1 (de)
JP (1) JP3654142B2 (de)
KR (1) KR100413989B1 (de)
CA (1) CA2323255C (de)
DE (1) DE60134066D1 (de)

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JP2001274103A (ja) 2001-10-05
KR100413989B1 (ko) 2004-01-07
EP1119016A3 (de) 2004-12-29
US6460482B1 (en) 2002-10-08
CA2323255A1 (en) 2001-07-20
JP3654142B2 (ja) 2005-06-02
KR20010076368A (ko) 2001-08-11

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