ES2054357T3 - Aparato y metodo para tratar substratos planos bajo una presion reducida. - Google Patents
Aparato y metodo para tratar substratos planos bajo una presion reducida.Info
- Publication number
- ES2054357T3 ES2054357T3 ES90908310T ES90908310T ES2054357T3 ES 2054357 T3 ES2054357 T3 ES 2054357T3 ES 90908310 T ES90908310 T ES 90908310T ES 90908310 T ES90908310 T ES 90908310T ES 2054357 T3 ES2054357 T3 ES 2054357T3
- Authority
- ES
- Spain
- Prior art keywords
- gas
- openings
- support surface
- substrate
- exit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
APARATO Y METODO PARA TRATAR UN SUSTRATO PLANO (10) MAS PARTICULARMENTE UNA OBLEA SEMICONDUCTORA EN LA FABRICACION DE CIRCUITOS INTEGRADOS, BAJO PRESION REDUCIDA QUE CONTIENE UNA CAMARA (2A, 2B) DE VACIO PROVISTA CON UN SOPORTE (11) DE SUSTRATO QUE TIENE UN CUERPO (11A) CON MEDIOS (12) DE CALENTAMIENTO Y/O ENFRIAMIENTO Y UNA SUPERFICIE (11B) DE SOPORTE, EN LA CUAL UNA PLURALIDAD DE ABERTURAS (20) DE INYECCION ESTA PRESENTE COMUNICANDO CON UN ESPACIO (12) DE INYECCION Y UNA ENTRADA (28) SUPLEMENTARIA DE GAS, A TRAVES DE CUYAS ABERTURAS DE INYECCION SE SUMINISTRA UN GAS ENTRE EL SUSTRATO Y LA SUPERFICIE DE SOPORTE PARA FORMAR ENTRE ELLOS UNA ALMOHADA DE GAS INTERCAMBIADORA DE CALOR. EN LA SUPERFICIE DE SOPORTE (11B) TAMBIEN UNA PLURALIDAD DE ABERTURAS (29) DE SALIDA ESTAN PRESENTES COMUNICANDO CON UN ESPACIO (24) DE SALIDA Y UN ORIFICIO (18) DE SALIDA A TRAVES DE CUYAS ABERTURAS DE SALIDA EL GAS ESCAPA DE ENTRE EL SUSTRATO (10) Y LA SUPERFICIE DE SOPORTE, DE MODO QUE, MIENTRAS SE MANTIENE LAALMOHADILLA DE GAS, EL GAS INYECTADO A TRAVES DE CADA UNA DE LAS ABERTURAS DE INYECCION ES EXPULSADO A TRAVES DE LAS ABERTURAS ADYACENTES DE SALIDA. CON LO QUE, EL GAS INYECTADO, NO ALCANZARA PRACTICAMENTE LA PERIFERIA DEL SUSTRATO Y NO INTERFERIRA CON GASES EN LA CAMARA DE REACCION.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3915039A DE3915039A1 (de) | 1989-05-08 | 1989-05-08 | Hubtisch |
FR8906057A FR2646861B1 (fr) | 1989-05-09 | 1989-05-09 | Appareil de traitement de substrats plans sous vide partiel |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2054357T3 true ES2054357T3 (es) | 1994-08-01 |
Family
ID=25880670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES90908310T Expired - Lifetime ES2054357T3 (es) | 1989-05-08 | 1990-05-07 | Aparato y metodo para tratar substratos planos bajo una presion reducida. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5177878A (es) |
EP (1) | EP0423327B1 (es) |
JP (1) | JP2935474B2 (es) |
DE (1) | DE69007733T2 (es) |
ES (1) | ES2054357T3 (es) |
WO (1) | WO1990013687A2 (es) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
US5444923A (en) * | 1993-04-13 | 1995-08-29 | Texas Instruments Incorporated | Quick cure exhaust manifold |
JP2934565B2 (ja) * | 1993-05-21 | 1999-08-16 | 三菱電機株式会社 | 半導体製造装置及び半導体製造方法 |
JP3165938B2 (ja) * | 1993-06-24 | 2001-05-14 | 東京エレクトロン株式会社 | ガス処理装置 |
JPH07111244A (ja) * | 1993-10-13 | 1995-04-25 | Mitsubishi Electric Corp | 気相結晶成長装置 |
US5588827A (en) * | 1993-12-17 | 1996-12-31 | Brooks Automation Inc. | Passive gas substrate thermal conditioning apparatus and method |
US5791895A (en) * | 1994-02-17 | 1998-08-11 | Novellus Systems, Inc. | Apparatus for thermal treatment of thin film wafer |
KR950025850A (ko) * | 1994-02-17 | 1995-09-18 | 서성기 | 박막의 열처리 장치 |
EP0669644B1 (en) * | 1994-02-28 | 1997-08-20 | Applied Materials, Inc. | Electrostatic chuck |
FI96580C (fi) * | 1994-04-19 | 1996-07-25 | Outokumpu Mintec Oy | Laite suodatuskakun käsittelemiseksi |
US5885356A (en) * | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US6113702A (en) | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
US5775416A (en) * | 1995-11-17 | 1998-07-07 | Cvc Products, Inc. | Temperature controlled chuck for vacuum processing |
US5828070A (en) * | 1996-02-16 | 1998-10-27 | Eaton Corporation | System and method for cooling workpieces processed by an ion implantation system |
US5740016A (en) * | 1996-03-29 | 1998-04-14 | Lam Research Corporation | Solid state temperature controlled substrate holder |
FR2747112B1 (fr) * | 1996-04-03 | 1998-05-07 | Commissariat Energie Atomique | Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement |
US5819434A (en) * | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
US6159297A (en) * | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
JPH09326385A (ja) * | 1996-06-04 | 1997-12-16 | Tokyo Electron Ltd | 基板冷却方法 |
US6183565B1 (en) | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
US5713138A (en) * | 1996-08-23 | 1998-02-03 | Research, Incorporated | Coating dryer system |
US5886864A (en) * | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
DE19781631T1 (de) * | 1997-01-02 | 1999-04-01 | Cvc Products Inc | Wärmeleitendes Spannfutter für Vakuumbearbeitungsvorrichtung |
US5936829A (en) * | 1997-01-02 | 1999-08-10 | Cvc Products, Inc. | Thermally conductive chuck for vacuum processor |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
DE69712864T2 (de) * | 1997-03-12 | 2002-09-12 | Tapematic Spa | Vorrichtung zum Unterstützen von optischen Datenspeicherscheiben |
US6138745A (en) | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
US6073576A (en) | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
US6210483B1 (en) | 1997-12-02 | 2001-04-03 | Applied Materials, Inc. | Anti-notch thinning heater |
JP3764278B2 (ja) * | 1998-07-13 | 2006-04-05 | 株式会社東芝 | 基板加熱装置、基板加熱方法及び基板処理方法 |
NL1010003C2 (nl) * | 1998-09-03 | 2000-03-13 | Asm Int | Reactor voorzien van verwarming. |
KR100634642B1 (ko) * | 1998-11-20 | 2006-10-16 | 스티그 알티피 시스템즈, 인코포레이티드 | 반도체 웨이퍼의 급속 가열 및 냉각 장치 |
NL1011487C2 (nl) | 1999-03-08 | 2000-09-18 | Koninkl Philips Electronics Nv | Werkwijze en inrichting voor het roteren van een wafer. |
US6464795B1 (en) * | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
JP2001068538A (ja) * | 1999-06-21 | 2001-03-16 | Tokyo Electron Ltd | 電極構造、載置台構造、プラズマ処理装置及び処理装置 |
US6705394B1 (en) | 1999-10-29 | 2004-03-16 | Cvc Products, Inc. | Rapid cycle chuck for low-pressure processing |
KR100754459B1 (ko) * | 1999-12-23 | 2007-09-03 | 에이에스엠 인터내셔널 엔.붸. | 웨이퍼 처리장치 |
NL1013938C2 (nl) | 1999-12-23 | 2001-06-26 | Asm Int | Inrichting voor het behandelen van een wafer. |
NL1013989C2 (nl) | 1999-12-29 | 2001-07-02 | Asm Int | Werkwijze en inrichting voor het behandelen van een wafer. |
NL1013984C2 (nl) * | 1999-12-29 | 2001-07-02 | Asm Int | Werkwijze en inrichting voor het behandelen van substraten. |
JP3654142B2 (ja) * | 2000-01-20 | 2005-06-02 | 住友電気工業株式会社 | 半導体製造装置用ガスシャワー体 |
JP3723712B2 (ja) * | 2000-02-10 | 2005-12-07 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
US7037797B1 (en) * | 2000-03-17 | 2006-05-02 | Mattson Technology, Inc. | Localized heating and cooling of substrates |
US6444027B1 (en) | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
WO2002013244A2 (en) * | 2000-08-08 | 2002-02-14 | Qc Solutions, Inc. | Apparatus and method for handling and testing of wafers |
DE10055033A1 (de) | 2000-11-07 | 2002-05-08 | Aixtron Ag | CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor |
DE10056029A1 (de) * | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
US6689221B2 (en) | 2000-12-04 | 2004-02-10 | Applied Materials, Inc. | Cooling gas delivery system for a rotatable semiconductor substrate support assembly |
US20020083897A1 (en) * | 2000-12-29 | 2002-07-04 | Applied Materials, Inc. | Full glass substrate deposition in plasma enhanced chemical vapor deposition |
JP4644943B2 (ja) * | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
US6887803B2 (en) * | 2001-11-08 | 2005-05-03 | Wafermasters, Inc. | Gas-assisted rapid thermal processing |
TW561515B (en) * | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
JP3791432B2 (ja) * | 2002-02-27 | 2006-06-28 | 住友電気工業株式会社 | 半導体製造用加熱装置 |
DE10211312A1 (de) | 2002-03-14 | 2003-10-02 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur epitaktischen Beschichtung einer Halbleiterscheibe sowie epitaktisch beschichtete Halbleiterscheibe |
KR101040446B1 (ko) * | 2002-04-19 | 2011-06-09 | 맷슨 테크놀로지, 인크. | 저증기압 가스 전구체를 이용하여 기판 상에 막을증착하기 위한 시스템 |
US6846519B2 (en) * | 2002-08-08 | 2005-01-25 | Blue29, Llc | Method and apparatus for electroless deposition with temperature-controlled chuck |
US6908512B2 (en) * | 2002-09-20 | 2005-06-21 | Blue29, Llc | Temperature-controlled substrate holder for processing in fluids |
US20050051098A1 (en) * | 2003-09-05 | 2005-03-10 | Tooru Aramaki | Plasma processing apparatus |
US7022627B2 (en) | 2003-10-31 | 2006-04-04 | Asm International N.V. | Method for the heat treatment of substrates |
US7410355B2 (en) | 2003-10-31 | 2008-08-12 | Asm International N.V. | Method for the heat treatment of substrates |
US6883250B1 (en) | 2003-11-04 | 2005-04-26 | Asm America, Inc. | Non-contact cool-down station for wafers |
US6940047B2 (en) | 2003-11-14 | 2005-09-06 | Asm International N.V. | Heat treatment apparatus with temperature control system |
KR101112029B1 (ko) * | 2004-02-13 | 2012-03-21 | 에이에스엠 아메리카, 인코포레이티드 | 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템 |
JP4519576B2 (ja) * | 2004-08-30 | 2010-08-04 | 住友精密工業株式会社 | プラズマエッチング装置用基台及びこれを備えたプラズマエッチング装置 |
US7217670B2 (en) | 2004-11-22 | 2007-05-15 | Asm International N.V. | Dummy substrate for thermal reactor |
US7296420B2 (en) * | 2004-12-02 | 2007-11-20 | Hitachi Global Storage Technologies Amsterdam, B.V. | Direct cooling pallet tray for temperature stability for deep ion mill etch process |
US7481312B2 (en) * | 2004-12-02 | 2009-01-27 | Hitachi Global Storage Technologies Netherlands B.V. | Direct cooling pallet assembly for temperature stability for deep ion mill etch process |
US7462246B2 (en) * | 2005-04-15 | 2008-12-09 | Memc Electronic Materials, Inc. | Modified susceptor for barrel reactor |
JP4553376B2 (ja) * | 2005-07-19 | 2010-09-29 | 東京エレクトロン株式会社 | 浮上式基板搬送処理装置及び浮上式基板搬送処理方法 |
JP4527670B2 (ja) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
DE102007026348A1 (de) * | 2007-06-06 | 2008-12-11 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
KR20090001091A (ko) * | 2007-06-29 | 2009-01-08 | (주)티티에스 | 외부발열부재가 구성된 반도체 제조장치 |
US20090280248A1 (en) * | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
US20110070370A1 (en) * | 2008-05-28 | 2011-03-24 | Aixtron Ag | Thermal gradient enhanced chemical vapour deposition (tge-cvd) |
JP4540731B2 (ja) * | 2008-09-29 | 2010-09-08 | 積水化学工業株式会社 | 表面処理用ノズル装置 |
US20100107974A1 (en) * | 2008-11-06 | 2010-05-06 | Asm America, Inc. | Substrate holder with varying density |
WO2010122742A1 (ja) * | 2009-04-22 | 2010-10-28 | パナソニック株式会社 | 薄膜形成装置および薄膜形成方法 |
DE102009044276A1 (de) | 2009-10-16 | 2011-05-05 | Aixtron Ag | CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter |
JP5778093B2 (ja) | 2011-08-10 | 2015-09-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法 |
JP5741315B2 (ja) * | 2011-08-16 | 2015-07-01 | 東京エレクトロン株式会社 | 膜割れ検出装置及び成膜装置 |
US20130074358A1 (en) * | 2011-09-24 | 2013-03-28 | Quantum Technology Holdings Limited | Heated body with high heat transfer rate material and its use |
WO2013076922A1 (ja) * | 2011-11-22 | 2013-05-30 | パナソニック株式会社 | 基板搬送ローラ、薄膜の製造装置及び薄膜の製造方法 |
US9916998B2 (en) * | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
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US10832931B2 (en) * | 2014-05-30 | 2020-11-10 | Applied Materials, Inc. | Electrostatic chuck with embossed top plate and cooling channels |
CN105280518B (zh) * | 2014-05-30 | 2020-09-08 | 盛美半导体设备(上海)股份有限公司 | 半导体基板的热处理装置 |
TWI661477B (zh) | 2015-06-18 | 2019-06-01 | 日商思可林集團股份有限公司 | 基板處理裝置 |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US11189502B2 (en) * | 2018-04-08 | 2021-11-30 | Applied Materials, Inc. | Showerhead with interlaced gas feed and removal and methods of use |
CN108847382B (zh) * | 2018-06-26 | 2020-10-16 | 上海华力微电子有限公司 | 一种气压调节装置、气压调节方法及晶圆刻蚀设备 |
JP6997863B2 (ja) * | 2018-10-30 | 2022-01-18 | 株式会社アルバック | 真空処理装置 |
CN109605067A (zh) * | 2019-02-11 | 2019-04-12 | 山东交通职业学院 | 机械加工工装 |
CN109794787B (zh) * | 2019-03-07 | 2021-02-02 | 蓝思精密(东莞)有限公司 | 吸附设备及数控机床 |
KR20210030074A (ko) * | 2019-09-09 | 2021-03-17 | 삼성전자주식회사 | 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치 |
US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
JP2022062986A (ja) * | 2020-10-09 | 2022-04-21 | 富士電機株式会社 | 半導体検査装置および半導体ウエハの検査方法 |
JP2022094023A (ja) * | 2020-12-14 | 2022-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
US4512391A (en) * | 1982-01-29 | 1985-04-23 | Varian Associates, Inc. | Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet |
JPS6060060A (ja) * | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
JPS60245778A (ja) * | 1984-05-21 | 1985-12-05 | Hitachi Ltd | 薄膜形成装置 |
DE3633386A1 (de) * | 1986-10-01 | 1988-04-14 | Leybold Ag | Verfahren und vorrichtung zum behandeln von substraten im vakuum |
-
1990
- 1990-05-07 EP EP90908310A patent/EP0423327B1/en not_active Expired - Lifetime
- 1990-05-07 DE DE69007733T patent/DE69007733T2/de not_active Expired - Fee Related
- 1990-05-07 ES ES90908310T patent/ES2054357T3/es not_active Expired - Lifetime
- 1990-05-07 WO PCT/NL1990/000063 patent/WO1990013687A2/en active IP Right Grant
- 1990-05-07 JP JP2507759A patent/JP2935474B2/ja not_active Expired - Lifetime
- 1990-05-07 US US07/613,667 patent/US5177878A/en not_active Expired - Fee Related
Also Published As
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US5177878A (en) | 1993-01-12 |
JPH04500502A (ja) | 1992-01-30 |
EP0423327A1 (en) | 1991-04-24 |
WO1990013687A3 (en) | 1990-12-13 |
DE69007733T2 (de) | 1994-09-29 |
WO1990013687A2 (en) | 1990-11-15 |
DE69007733D1 (de) | 1994-05-05 |
JP2935474B2 (ja) | 1999-08-16 |
EP0423327B1 (en) | 1994-03-30 |
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