JP2013530527A5 - - Google Patents

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Publication number
JP2013530527A5
JP2013530527A5 JP2013512093A JP2013512093A JP2013530527A5 JP 2013530527 A5 JP2013530527 A5 JP 2013530527A5 JP 2013512093 A JP2013512093 A JP 2013512093A JP 2013512093 A JP2013512093 A JP 2013512093A JP 2013530527 A5 JP2013530527 A5 JP 2013530527A5
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JP
Japan
Prior art keywords
semiconductor device
region
layer
raised
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013512093A
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English (en)
Japanese (ja)
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JP2013530527A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2011/037275 external-priority patent/WO2011149768A2/en
Publication of JP2013530527A publication Critical patent/JP2013530527A/ja
Publication of JP2013530527A5 publication Critical patent/JP2013530527A5/ja
Pending legal-status Critical Current

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JP2013512093A 2010-05-25 2011-05-20 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法 Pending JP2013530527A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34792810P 2010-05-25 2010-05-25
US61/347,928 2010-05-25
PCT/US2011/037275 WO2011149768A2 (en) 2010-05-25 2011-05-20 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Publications (2)

Publication Number Publication Date
JP2013530527A JP2013530527A (ja) 2013-07-25
JP2013530527A5 true JP2013530527A5 (enExample) 2013-10-31

Family

ID=45004680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013512093A Pending JP2013530527A (ja) 2010-05-25 2011-05-20 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法

Country Status (6)

Country Link
US (2) US8659057B2 (enExample)
EP (1) EP2577735A4 (enExample)
JP (1) JP2013530527A (enExample)
CN (1) CN103038886A (enExample)
TW (1) TW201208076A (enExample)
WO (1) WO2011149768A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US9006800B2 (en) * 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
US20140145201A1 (en) * 2012-11-29 2014-05-29 Avogy, Inc. Method and system for gallium nitride vertical jfet with separated gate and source
EP3123520A4 (en) 2014-03-28 2017-11-22 Intel Corporation Selectively regrown top contact for vertical semiconductor devices
US9935102B1 (en) * 2016-10-05 2018-04-03 International Business Machines Corporation Method and structure for improving vertical transistor
US11245027B2 (en) * 2020-03-10 2022-02-08 International Business Machines Corporation Bottom source/drain etch with fin-cut-last-VTFET
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region
DE102023208539A1 (de) 2023-08-10 2025-02-13 Infineon Technologies Austria Ag Transistorvorrichtung und verfahren
WO2026049789A1 (en) * 2024-08-26 2026-03-05 Microchip Technology Incorporated Transistor and method for manufacturing same

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984752A (en) 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
JPS53121581A (en) 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Logical element of electrostatic inductive transistor
US4364072A (en) 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4262296A (en) 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
IT1138998B (it) * 1980-03-17 1986-09-17 Gte Laboratories Inc Transistor a induzione statica con strutture di porta perfezionate
US4403396A (en) 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4587540A (en) 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length
CH670173A5 (enExample) * 1986-06-03 1989-05-12 Bbc Brown Boveri & Cie
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5429956A (en) 1994-09-30 1995-07-04 United Microelectronics Corporation Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel
US5592005A (en) 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
JP4027447B2 (ja) * 1996-04-24 2007-12-26 株式会社ルネサステクノロジ 半導体装置の製造方法
US5903020A (en) 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US5945701A (en) 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
US6362062B1 (en) * 1999-09-08 2002-03-26 Texas Instruments Incorporated Disposable sidewall spacer process for integrated circuits
US6816294B2 (en) 2001-02-16 2004-11-09 Electro Scientific Industries, Inc. On-the-fly beam path error correction for memory link processing
US6967372B2 (en) 2001-04-10 2005-11-22 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers
US6891262B2 (en) 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
US6855970B2 (en) 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP4122880B2 (ja) 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US7138685B2 (en) * 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
JP4524735B2 (ja) 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20050067630A1 (en) 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7187021B2 (en) 2003-12-10 2007-03-06 General Electric Company Static induction transistor
US7407837B2 (en) 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
EP1779435B8 (en) 2004-07-08 2012-03-07 Ss Sc Ip, Llc Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7279368B2 (en) 2005-03-04 2007-10-09 Cree, Inc. Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
US20070029573A1 (en) 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
JP4939797B2 (ja) 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置
US20070148939A1 (en) * 2005-12-22 2007-06-28 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US8058683B2 (en) 2007-01-18 2011-11-15 Samsung Electronics Co., Ltd. Access device having vertical channel and related semiconductor device and a method of fabricating the access device
US7982239B2 (en) * 2007-06-13 2011-07-19 Northrop Grumman Corporation Power switching transistors
US7763506B2 (en) * 2007-09-10 2010-07-27 Infineon Technologies Austria Ag Method for making an integrated circuit including vertical junction field effect transistors
US7994548B2 (en) 2008-05-08 2011-08-09 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
EP2345082A4 (en) 2008-11-05 2013-07-31 Ss Sc Ip Llc VERTICAL BARRIER FIELD EFFECT TRANSISTORS WITH TILTED SIDE WALLS AND METHOD FOR THEIR MANUFACTURE

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