JP2019537274A5 - - Google Patents

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JP2019537274A5
JP2019537274A5 JP2019530787A JP2019530787A JP2019537274A5 JP 2019537274 A5 JP2019537274 A5 JP 2019537274A5 JP 2019530787 A JP2019530787 A JP 2019530787A JP 2019530787 A JP2019530787 A JP 2019530787A JP 2019537274 A5 JP2019537274 A5 JP 2019537274A5
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semiconductor device
semiconductor layer
conductivity type
drift region
region
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JP2019530787A
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JP6817443B2 (ja
JP2019537274A (ja
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JP2019530787A 2016-12-08 2017-09-29 ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 Active JP6817443B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/372,505 US10861931B2 (en) 2016-12-08 2016-12-08 Power semiconductor devices having gate trenches and buried edge terminations and related methods
US15/372,505 2016-12-08
PCT/US2017/054224 WO2018106326A1 (en) 2016-12-08 2017-09-29 Power semiconductor devices having gate trenches and buried termination structures and related methods

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JP2020214806A Division JP7182594B2 (ja) 2016-12-08 2020-12-24 ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法

Publications (3)

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JP2019537274A JP2019537274A (ja) 2019-12-19
JP2019537274A5 true JP2019537274A5 (enExample) 2020-02-06
JP6817443B2 JP6817443B2 (ja) 2021-01-20

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JP2019530787A Active JP6817443B2 (ja) 2016-12-08 2017-09-29 ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法
JP2020214806A Active JP7182594B2 (ja) 2016-12-08 2020-12-24 ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法

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US (2) US10861931B2 (enExample)
EP (1) EP3552239A1 (enExample)
JP (2) JP6817443B2 (enExample)
KR (1) KR102204272B1 (enExample)
CN (1) CN110036486B (enExample)
WO (1) WO2018106326A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10355132B2 (en) * 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
JP7006280B2 (ja) * 2018-01-09 2022-01-24 富士電機株式会社 半導体装置
US10777670B2 (en) * 2018-06-25 2020-09-15 Pakal Technologies, Inc. Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer
DE102018124740B4 (de) * 2018-10-08 2025-08-28 Infineon Technologies Ag Verfahren zur herstellung eines halbleiterbauelements
KR102692122B1 (ko) * 2019-07-16 2024-08-05 현대자동차 주식회사 반도체 소자 및 그 제조 방법
US11031461B2 (en) * 2019-08-25 2021-06-08 Genesic Semiconductor Inc. Manufacture of robust, high-performance devices
US20240014255A1 (en) * 2020-01-03 2024-01-11 Lg Electronics Inc. Metal-oxide-semiconductor field-effect transistor device, and manufacturing method therefor
US11961903B2 (en) * 2020-05-26 2024-04-16 Hyundai Mobis Co., Ltd. Power semiconductor device and method of fabricating the same
EP3916761A1 (en) * 2020-05-27 2021-12-01 Infineon Technologies Austria AG Method for producing a superjunction device
KR102531554B1 (ko) * 2020-07-01 2023-05-11 서강대학교산학협력단 실리콘카바이드 트랜지스터 및 이의 제조방법
EP3975266A1 (en) * 2020-09-28 2022-03-30 Nexperia B.V. Semiconductor device with improved junction termination extension region
FR3115631B1 (fr) * 2020-10-23 2022-11-04 St Microelectronics Crolles 2 Sas Composant semiconducteur de circuit intégré
JP7724570B2 (ja) * 2020-12-18 2025-08-18 エムアイツー‐ファクトリー ジーエムビーエイチ 電子半導体部品、および電子半導体部品用の前処理された複合基板の製造方法
JP7647239B2 (ja) * 2021-03-30 2025-03-18 富士電機株式会社 半導体装置
JP7697255B2 (ja) * 2021-04-27 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US11894455B2 (en) * 2021-09-22 2024-02-06 Wolfspeed, Inc. Vertical power devices fabricated using implanted methods
EP4181212A1 (en) * 2021-11-11 2023-05-17 Infineon Technologies Dresden GmbH & Co . KG Semiconductor device
US11955567B2 (en) * 2022-02-16 2024-04-09 Leap Semiconductor Corp. Wide-band gap semiconductor device and method of manufacturing the same
US12376319B2 (en) 2022-03-24 2025-07-29 Wolfspeed, Inc. Support shield structures for trenched semiconductor devices
EP4325577B1 (en) * 2022-04-14 2025-10-29 Suzhou Loongspeed Semiconductor Technology Co., Ltd. Transistor device and method for manufacturing same
US12408360B2 (en) * 2022-05-13 2025-09-02 Wolfspeed, Inc. Vertical power devices having mesas and etched trenches therebetween
CN114725090B (zh) * 2022-05-24 2022-09-02 深圳芯能半导体技术有限公司 一种绝缘栅双极型晶体管及其制备方法
JP2023173420A (ja) 2022-05-26 2023-12-07 富士電機株式会社 炭化珪素半導体装置
US12154895B2 (en) * 2022-06-02 2024-11-26 Nanya Technology Corporation Semiconductor device with guard ring
US12176342B2 (en) * 2022-06-02 2024-12-24 Nanya Technology Corporation Method for fabricating semiconductor device with guard ring
US20240047569A1 (en) * 2022-08-08 2024-02-08 Leap Semiconductor Corp. Silicon carbide semiconductor power transistor and method of manufacturing the same
CN115832058B (zh) * 2022-12-15 2025-08-22 恒泰柯半导体（上海）有限公司 一种沟槽型碳化硅mosfet器件
WO2024160354A1 (en) * 2023-01-31 2024-08-08 Hitachi Energy Ltd Power semiconductor device and method for producing a power semiconductor device
CN119562575B (zh) * 2024-11-20 2025-09-23 深圳尚阳通科技股份有限公司 Sgt器件的终端结构
CN120640743B (zh) * 2025-08-13 2025-11-14 杭州谱析光晶半导体科技有限公司 一种低导通电阻的SiC MOSFET终端结构及其制备工艺

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7405452B2 (en) * 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
JP2006005275A (ja) * 2004-06-21 2006-01-05 Toshiba Corp 電力用半導体素子
JP2008103529A (ja) 2006-10-19 2008-05-01 Toyota Central R&D Labs Inc 半導体装置
JP4356764B2 (ja) * 2007-04-18 2009-11-04 株式会社デンソー 炭化珪素半導体装置
JP2009033036A (ja) 2007-07-30 2009-02-12 Hitachi Ltd 半導体装置及びこれを用いた電気回路装置
US7989882B2 (en) 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
US8164139B2 (en) * 2008-04-29 2012-04-24 Force Mos Technology Co., Ltd. MOSFET structure with guard ring
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
JP5409247B2 (ja) * 2009-10-13 2014-02-05 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2011091086A (ja) 2009-10-20 2011-05-06 Mitsubishi Electric Corp 半導体装置
US8415671B2 (en) * 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
JP5482745B2 (ja) * 2011-08-10 2014-05-07 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2013038329A (ja) * 2011-08-10 2013-02-21 Toshiba Corp 半導体装置
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US8785278B2 (en) * 2012-02-02 2014-07-22 Alpha And Omega Semiconductor Incorporated Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
JP2013219161A (ja) 2012-04-09 2013-10-24 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5751213B2 (ja) 2012-06-14 2015-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5791821B2 (ja) * 2012-10-18 2015-10-07 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US9496331B2 (en) * 2012-12-07 2016-11-15 Denso Corporation Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same
JP5983415B2 (ja) * 2013-01-15 2016-08-31 住友電気工業株式会社 炭化珪素半導体装置
JP6064614B2 (ja) 2013-01-21 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2014175518A (ja) 2013-03-11 2014-09-22 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9012984B2 (en) * 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
CN105190852B (zh) * 2013-03-15 2018-09-11 美国联合碳化硅公司 改进的vjfet器件
JP2014241368A (ja) 2013-06-12 2014-12-25 住友電気工業株式会社 炭化珪素半導体装置
US10868169B2 (en) * 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
CN105593997A (zh) * 2013-10-04 2016-05-18 三菱电机株式会社 碳化硅半导体装置及其制造方法
KR101539880B1 (ko) * 2014-01-02 2015-07-27 삼성전기주식회사 전력 반도체 소자
JP6291988B2 (ja) 2014-04-15 2018-03-14 住友電気工業株式会社 炭化珪素半導体装置
JP6485034B2 (ja) * 2014-06-16 2019-03-20 富士電機株式会社 半導体装置の製造方法
WO2016063683A1 (ja) * 2014-10-24 2016-04-28 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6354525B2 (ja) * 2014-11-06 2018-07-11 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6479615B2 (ja) * 2015-09-14 2019-03-06 株式会社東芝 半導体装置の製造方法
JP6693131B2 (ja) * 2016-01-12 2020-05-13 富士電機株式会社 半導体装置
CN105977310B (zh) * 2016-07-27 2019-06-04 电子科技大学 碳化硅功率器件终端结构及其制造方法

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