FR3115631B1 - Composant semiconducteur de circuit intégré - Google Patents
Composant semiconducteur de circuit intégré Download PDFInfo
- Publication number
- FR3115631B1 FR3115631B1 FR2010911A FR2010911A FR3115631B1 FR 3115631 B1 FR3115631 B1 FR 3115631B1 FR 2010911 A FR2010911 A FR 2010911A FR 2010911 A FR2010911 A FR 2010911A FR 3115631 B1 FR3115631 B1 FR 3115631B1
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- region
- ciso
- integrated circuit
- gate region
- semiconductor component
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- 239000004065 semiconductor Substances 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Selon un aspect, il est proposé un circuit intégré comprenant un substrat semiconducteur (SUB) ayant un premier type de conductivité et - un premier composant semiconducteur (CS1, CS2) comportant : ○ une région semiconductrice enterrée (RE1, RE2, CISO) et ayant un deuxième type de conductivité opposé au premier type de conductivité, ○ une première région de grille (PRG) et une deuxième région de grille (DRG) s’étendant chacune en profondeur depuis une face avant (FA) du substrat (SUB) jusqu’à la région semiconductrice enterrée (RE1, RE2, CISO), ○ une troisième région de grille (TRG) s’étendant en profondeur depuis la face avant (FA) du substrat semiconducteur et étant connectée électriquement à la région semiconductrice enterrée (RE1, RE2, CISO), ○ une zone, dite zone active (ZA), délimitée par la première région de grille (PRG), la deuxième région de grille (DRG) et la région semiconductrice enterrée (RE1, RE2, CISO). Figure pour l’abrégé : Figure 2
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2010911A FR3115631B1 (fr) | 2020-10-23 | 2020-10-23 | Composant semiconducteur de circuit intégré |
US17/505,340 US20220131005A1 (en) | 2020-10-23 | 2021-10-19 | Semiconductor integrated circuit component |
CN202111231659.4A CN114496957A (zh) | 2020-10-23 | 2021-10-22 | 半导体集成电路部件 |
CN202122548939.XU CN217182173U (zh) | 2020-10-23 | 2021-10-22 | 集成电路 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2010911 | 2020-10-23 | ||
FR2010911A FR3115631B1 (fr) | 2020-10-23 | 2020-10-23 | Composant semiconducteur de circuit intégré |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3115631A1 FR3115631A1 (fr) | 2022-04-29 |
FR3115631B1 true FR3115631B1 (fr) | 2022-11-04 |
Family
ID=74758901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2010911A Active FR3115631B1 (fr) | 2020-10-23 | 2020-10-23 | Composant semiconducteur de circuit intégré |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220131005A1 (fr) |
CN (2) | CN114496957A (fr) |
FR (1) | FR3115631B1 (fr) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4881105A (en) * | 1988-06-13 | 1989-11-14 | International Business Machines Corporation | Integrated trench-transistor structure and fabrication process |
US5973375A (en) * | 1997-06-06 | 1999-10-26 | Hughes Electronics Corporation | Camouflaged circuit structure with step implants |
US7638841B2 (en) * | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7241655B2 (en) * | 2004-08-30 | 2007-07-10 | Micron Technology, Inc. | Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
US7297603B2 (en) * | 2005-03-31 | 2007-11-20 | Semiconductor Components Industries, L.L.C. | Bi-directional transistor and method therefor |
US8350318B2 (en) * | 2006-03-06 | 2013-01-08 | Semiconductor Components Industries, Llc | Method of forming an MOS transistor and structure therefor |
JP5612268B2 (ja) * | 2008-03-28 | 2014-10-22 | 株式会社東芝 | 半導体装置及びdc−dcコンバータ |
US20100123193A1 (en) * | 2008-11-14 | 2010-05-20 | Burke Peter A | Semiconductor component and method of manufacture |
US8471331B2 (en) * | 2011-08-15 | 2013-06-25 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device with source-substrate connection and structure |
JP6478316B2 (ja) * | 2014-11-10 | 2019-03-06 | ローム株式会社 | トレンチゲート構造を備えた半導体装置およびその製造方法 |
FR3048103B1 (fr) * | 2016-02-22 | 2018-03-23 | Stmicroelectronics (Rousset) Sas | Procede de detection d'un amincissement du substrat semi-conducteur d'un circuit integre depuis sa face arriere et circuit integre correspondant |
JP6490305B2 (ja) * | 2016-04-27 | 2019-03-27 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
US10692863B2 (en) * | 2016-09-30 | 2020-06-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor package |
FR3069954B1 (fr) * | 2017-08-01 | 2020-02-07 | Stmicroelectronics (Rousset) Sas | Procede de detection d'un amincissement du substrat d'un circuit integre par sa face arriere, et circuit integre associe |
FR3070535A1 (fr) * | 2017-08-28 | 2019-03-01 | Stmicroelectronics (Crolles 2) Sas | Circuit integre avec element capacitif a structure verticale, et son procede de fabrication |
FR3085540B1 (fr) * | 2018-08-31 | 2020-09-25 | St Microelectronics Rousset | Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication |
IT201900013416A1 (it) * | 2019-07-31 | 2021-01-31 | St Microelectronics Srl | Dispositivo di potenza a bilanciamento di carica e procedimento di fabbricazione del dispositivo di potenza a bilanciamento di carica |
WO2021030490A1 (fr) * | 2019-08-12 | 2021-02-18 | Maxpower Semiconductor, Inc. | Dispositif d'alimentation à haute densité muni d'une plaque de champ en retrait sélectivement protégée |
US20210408235A1 (en) * | 2020-06-25 | 2021-12-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with silicide gate fill structure |
US20230411446A1 (en) * | 2022-06-21 | 2023-12-21 | Wolfspeed, Inc. | Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods |
-
2020
- 2020-10-23 FR FR2010911A patent/FR3115631B1/fr active Active
-
2021
- 2021-10-19 US US17/505,340 patent/US20220131005A1/en active Pending
- 2021-10-22 CN CN202111231659.4A patent/CN114496957A/zh active Pending
- 2021-10-22 CN CN202122548939.XU patent/CN217182173U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20220131005A1 (en) | 2022-04-28 |
FR3115631A1 (fr) | 2022-04-29 |
CN114496957A (zh) | 2022-05-13 |
CN217182173U (zh) | 2022-08-12 |
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