JPS638624B2 - - Google Patents
Info
- Publication number
- JPS638624B2 JPS638624B2 JP53140285A JP14028578A JPS638624B2 JP S638624 B2 JPS638624 B2 JP S638624B2 JP 53140285 A JP53140285 A JP 53140285A JP 14028578 A JP14028578 A JP 14028578A JP S638624 B2 JPS638624 B2 JP S638624B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- gate
- current
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 101150068246 V-MOS gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028578A JPS5565463A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028578A JPS5565463A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5565463A JPS5565463A (en) | 1980-05-16 |
| JPS638624B2 true JPS638624B2 (fr) | 1988-02-23 |
Family
ID=15265216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14028578A Granted JPS5565463A (en) | 1978-11-13 | 1978-11-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5565463A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3988598A2 (fr) | 2020-10-22 | 2022-04-27 | FUJIFILM Business Innovation Corp. | Composition liquide, film à éclat métallique, et article |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034785A (en) * | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
| DE3752273T2 (de) * | 1986-11-19 | 1999-09-09 | Japan Res Dev Corp | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
| US4761679A (en) * | 1986-12-22 | 1988-08-02 | North American Philips Corporation | Complementary silicon-on-insulator lateral insulated gate rectifiers |
| US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| US4992390A (en) * | 1989-07-06 | 1991-02-12 | General Electric Company | Trench gate structure with thick bottom oxide |
| US5242845A (en) * | 1990-06-13 | 1993-09-07 | Kabushiki Kaisha Toshiba | Method of production of vertical MOS transistor |
| DE4300806C1 (de) * | 1993-01-14 | 1993-12-23 | Siemens Ag | Verfahren zur Herstellung von vertikalen MOS-Transistoren |
| US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
| US5770878A (en) | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
| US5929476A (en) | 1996-06-21 | 1999-07-27 | Prall; Kirk | Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors |
| US6500744B2 (en) | 1999-09-02 | 2002-12-31 | Micron Technology, Inc. | Methods of forming DRAM assemblies, transistor devices, and openings in substrates |
| JP4939797B2 (ja) * | 2005-11-01 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | スイッチング半導体装置 |
-
1978
- 1978-11-13 JP JP14028578A patent/JPS5565463A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3988598A2 (fr) | 2020-10-22 | 2022-04-27 | FUJIFILM Business Innovation Corp. | Composition liquide, film à éclat métallique, et article |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5565463A (en) | 1980-05-16 |
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