DE3752273T2 - Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung - Google Patents
Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren HerstellungInfo
- Publication number
- DE3752273T2 DE3752273T2 DE3752273T DE3752273T DE3752273T2 DE 3752273 T2 DE3752273 T2 DE 3752273T2 DE 3752273 T DE3752273 T DE 3752273T DE 3752273 T DE3752273 T DE 3752273T DE 3752273 T2 DE3752273 T2 DE 3752273T2
- Authority
- DE
- Germany
- Prior art keywords
- incised
- stage
- production
- insulated gate
- static induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000006698 induction Effects 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7725—Field effect transistors with delta-doped channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27393486A JPS63128674A (ja) | 1986-11-19 | 1986-11-19 | 切り込み型絶縁ゲ−ト静電誘導トランジスタ |
JP27393586A JPS63128675A (ja) | 1986-11-19 | 1986-11-19 | 切り込み型絶縁ゲ−ト静電誘導トランジスタ |
JP27675486A JPS63131583A (ja) | 1986-11-21 | 1986-11-21 | 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 |
JP27675586A JPS63131584A (ja) | 1986-11-21 | 1986-11-21 | 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3752273D1 DE3752273D1 (de) | 1999-06-10 |
DE3752273T2 true DE3752273T2 (de) | 1999-09-09 |
Family
ID=27479007
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3752273T Expired - Fee Related DE3752273T2 (de) | 1986-11-19 | 1987-11-10 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
DE3752215T Expired - Fee Related DE3752215T2 (de) | 1986-11-19 | 1987-11-18 | Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe |
DE87310185T Expired - Fee Related DE3789003T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung. |
DE3752255T Expired - Fee Related DE3752255T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3752215T Expired - Fee Related DE3752215T2 (de) | 1986-11-19 | 1987-11-18 | Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe |
DE87310185T Expired - Fee Related DE3789003T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung. |
DE3752255T Expired - Fee Related DE3752255T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5115287A (de) |
EP (4) | EP0690513B1 (de) |
DE (4) | DE3752273T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3752273T2 (de) * | 1986-11-19 | 1999-09-09 | Japan Res Dev Corp | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
US5266523A (en) * | 1991-11-14 | 1993-11-30 | Micron Technology, Inc. | Method of forming self-aligned contacts using the local oxidation of silicon |
DE19503641A1 (de) * | 1995-02-06 | 1996-08-08 | Forschungszentrum Juelich Gmbh | Schichtstruktur mit einer Silicid-Schicht, sowie Verfahren zur Herstellung einer solchen Schichtstruktur |
US6341144B1 (en) * | 1996-09-20 | 2002-01-22 | At&T Corp. | Video coder providing implicit coefficient prediction and scan adaptation for image coding and intra coding of video |
US6977406B2 (en) | 2001-04-27 | 2005-12-20 | National Institute Of Information And Communications Technology, Incorporated Administrative Agency | Short channel insulated-gate static induction transistor and method of manufacturing the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE29971E (en) * | 1971-07-31 | 1979-04-17 | Zaidan Hojin Hondotai Kenkyn Shinkokai | Field effect semiconductor device having an unsaturated triode vacuum tube characteristic |
JPS53142189A (en) * | 1977-05-17 | 1978-12-11 | Matsushita Electronics Corp | Insulating gate type field effect transistor |
JPS54125986A (en) * | 1978-03-23 | 1979-09-29 | Handotai Kenkyu Shinkokai | Semiconductor including insulated gate type transistor |
GB2020600B (en) * | 1978-04-24 | 1983-02-16 | Yoshino Kogyosho Co Ltd | Device for removing and trimming injection moulded parisonbefore blow moulding |
US4427990A (en) * | 1978-07-14 | 1984-01-24 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor photo-electric converter with insulated gate over p-n charge storage region |
JPS5565463A (en) * | 1978-11-13 | 1980-05-16 | Semiconductor Res Found | Semiconductor device |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
JPS5735591A (en) * | 1980-08-12 | 1982-02-26 | Mochida Pharmaceut Co Ltd | Novel pyrimidine derivative |
US4654680A (en) * | 1980-09-24 | 1987-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Sidewall gate IGFET |
GB2103879B (en) * | 1981-08-19 | 1985-04-11 | Secr Defence | Method for producing a vertical channel transistor |
JPS5856270A (ja) * | 1981-09-30 | 1983-04-02 | Fujitsu Ltd | 滋気デイスク装置 |
JPS59186371A (ja) * | 1983-04-07 | 1984-10-23 | Fuji Xerox Co Ltd | 半導体装置 |
JPS6028394A (ja) * | 1983-07-26 | 1985-02-13 | Matsushita Electric Ind Co Ltd | ビデオ再生装置 |
FR2555816B1 (fr) * | 1983-11-25 | 1986-04-11 | Thomson Csf | Transistor a effet de champ a structure verticale |
DE3752273T2 (de) * | 1986-11-19 | 1999-09-09 | Japan Res Dev Corp | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
-
1987
- 1987-11-10 DE DE3752273T patent/DE3752273T2/de not_active Expired - Fee Related
- 1987-11-10 EP EP95114168A patent/EP0690513B1/de not_active Expired - Lifetime
- 1987-11-18 EP EP93101675A patent/EP0547030B1/de not_active Expired - Lifetime
- 1987-11-18 DE DE3752215T patent/DE3752215T2/de not_active Expired - Fee Related
- 1987-11-18 EP EP92101661A patent/EP0481965B1/de not_active Expired - Lifetime
- 1987-11-18 DE DE87310185T patent/DE3789003T2/de not_active Expired - Fee Related
- 1987-11-18 DE DE3752255T patent/DE3752255T2/de not_active Expired - Fee Related
- 1987-11-18 EP EP87310185A patent/EP0268472B1/de not_active Expired - Lifetime
-
1991
- 1991-08-30 US US07/752,934 patent/US5115287A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5115287A (en) | 1992-05-19 |
DE3752215T2 (de) | 1999-04-08 |
EP0481965B1 (de) | 1998-09-09 |
DE3752255D1 (de) | 1999-04-01 |
EP0481965A3 (en) | 1992-09-30 |
EP0268472B1 (de) | 1994-02-02 |
DE3789003T2 (de) | 1994-05-11 |
DE3752255T2 (de) | 1999-09-02 |
EP0268472A2 (de) | 1988-05-25 |
DE3752215D1 (de) | 1998-10-15 |
EP0547030A3 (en) | 1993-07-21 |
EP0690513B1 (de) | 1999-05-06 |
EP0268472A3 (en) | 1988-08-17 |
EP0547030A2 (de) | 1993-06-16 |
DE3789003D1 (de) | 1994-03-17 |
EP0690513A2 (de) | 1996-01-03 |
EP0481965A2 (de) | 1992-04-22 |
DE3752273D1 (de) | 1999-06-10 |
EP0547030B1 (de) | 1999-02-24 |
EP0690513A3 (de) | 1996-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: BOECK, TAPPE, KIRSCHNER RECHTSANWAELTE PATENTANWAELTE |
|
8339 | Ceased/non-payment of the annual fee |