FR3112026B1 - Dispositif optoélectronique et procédé de fabrication - Google Patents

Dispositif optoélectronique et procédé de fabrication Download PDF

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Publication number
FR3112026B1
FR3112026B1 FR2006904A FR2006904A FR3112026B1 FR 3112026 B1 FR3112026 B1 FR 3112026B1 FR 2006904 A FR2006904 A FR 2006904A FR 2006904 A FR2006904 A FR 2006904A FR 3112026 B1 FR3112026 B1 FR 3112026B1
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FR
France
Prior art keywords
opening
substrate
optoelectronic device
manufacturing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2006904A
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English (en)
Other versions
FR3112026A1 (fr
Inventor
Benoît Amstatt
Pierre Tchoulfian
Jérôme Napierala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR2006904A priority Critical patent/FR3112026B1/fr
Priority to PCT/EP2021/067780 priority patent/WO2022002896A1/fr
Priority to US18/004,002 priority patent/US20230268460A1/en
Priority to EP21736610.3A priority patent/EP4173045A1/fr
Publication of FR3112026A1 publication Critical patent/FR3112026A1/fr
Application granted granted Critical
Publication of FR3112026B1 publication Critical patent/FR3112026B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif optoélectronique et procédé de fabrication. L’invention concerne un procédé de fabrication d’un dispositif optoélectronique comprenant un substrat (1) et, sur une première face du substrat (1), au moins un empilement (3), selon une direction longitudinale (z), d’au moins une couche (30) d’injection d’un premier type de porteurs et une couche active (31), ledit procédé comprenant : Une fourniture du substrat (1),Une formation d’un masque de croissance (2) sur la première face du substrat (1), ledit masque de croissance (2) comprenant au moins une ouverture (20, 20’) selon la direction longitudinale (z) au travers de laquelle est exposée la première face,Une formation, à partir de la zone exposée du substrat (1), de la couche (30) d’injection du premier type de porteurs au sein de l’au moins une ouverture (20, 20’),Une formation de la couche active (31) sur ladite couche (30) d’injection, au sein de l’au moins une ouverture (20, 20’), de sorte que ladite couche active (31) soit confinée dans l’au moins une ouverture (20, 20’) et ne s’étende pas en dehors de ladite au moins une ouverture. L’invention concerne également un dispositif optoélectronique comprenant une couche active confinée dans une ouverture d’un masque de croissance. Figure pour l’abrégé : Fig. 1D
FR2006904A 2020-06-30 2020-06-30 Dispositif optoélectronique et procédé de fabrication Active FR3112026B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR2006904A FR3112026B1 (fr) 2020-06-30 2020-06-30 Dispositif optoélectronique et procédé de fabrication
PCT/EP2021/067780 WO2022002896A1 (fr) 2020-06-30 2021-06-29 Dispositif optoélectronique et procédé de fabrication correspondant
US18/004,002 US20230268460A1 (en) 2020-06-30 2021-06-29 Optoelectronic device and manufacturing method
EP21736610.3A EP4173045A1 (fr) 2020-06-30 2021-06-29 Dispositif optoélectronique et procédé de fabrication correspondant

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2006904 2020-06-30
FR2006904A FR3112026B1 (fr) 2020-06-30 2020-06-30 Dispositif optoélectronique et procédé de fabrication

Publications (2)

Publication Number Publication Date
FR3112026A1 FR3112026A1 (fr) 2021-12-31
FR3112026B1 true FR3112026B1 (fr) 2022-09-23

Family

ID=72644465

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2006904A Active FR3112026B1 (fr) 2020-06-30 2020-06-30 Dispositif optoélectronique et procédé de fabrication

Country Status (4)

Country Link
US (1) US20230268460A1 (fr)
EP (1) EP4173045A1 (fr)
FR (1) FR3112026B1 (fr)
WO (1) WO2022002896A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2584150B (en) * 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
FR3137499A1 (fr) * 2022-06-30 2024-01-05 Aledia Dispositif optoélectronique à zones de transitions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP2003158296A (ja) * 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
TW200409378A (en) * 2002-11-25 2004-06-01 Super Nova Optoelectronics Corp GaN-based light-emitting diode and the manufacturing method thereof
KR100624448B1 (ko) * 2004-12-02 2006-09-18 삼성전기주식회사 반도체 발광소자 및 그 제조방법
JP2007294878A (ja) * 2006-03-31 2007-11-08 Fujifilm Corp 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
CN109950201B (zh) * 2019-03-25 2021-11-23 京东方科技集团股份有限公司 光电器件外延结构的制造方法

Also Published As

Publication number Publication date
WO2022002896A1 (fr) 2022-01-06
US20230268460A1 (en) 2023-08-24
FR3112026A1 (fr) 2021-12-31
EP4173045A1 (fr) 2023-05-03

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