JPS57190386A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57190386A
JPS57190386A JP7531081A JP7531081A JPS57190386A JP S57190386 A JPS57190386 A JP S57190386A JP 7531081 A JP7531081 A JP 7531081A JP 7531081 A JP7531081 A JP 7531081A JP S57190386 A JPS57190386 A JP S57190386A
Authority
JP
Japan
Prior art keywords
layer
type
laminated
layers
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7531081A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7531081A priority Critical patent/JPS57190386A/en
Publication of JPS57190386A publication Critical patent/JPS57190386A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the deterioration of eye-pattern by reducing the transition vibration and to improve the high-speed digital characteristics for the titled semiconductor laser by a method wherein the semiconductor laser is formed into Y-shaped mesa stripe form, and the impurity density of that region is controlled. CONSTITUTION:On an N type GaAs substrate 1, an N type Al0.3Ga0.7As clad layer 2, and N type Al0.15Ga0.85As photo waveguide passage layer 3, a P type GaAs active layer 4, and a P type Al0.3Ga0.7As clad layer 5 are epitaxially grown in liquid phase and laminated, and etching is performed using an SiO2 film as a mask, and the photo waveguide layer 3 is exposed by locally removing the layers 4 and 5. Then, mesa etching is performed as deep as to the substrate, a Y-shaped mesa stripe, whereon the layer 3 will be laminated at the front end and the layers 2-5 will be laminated at the rear end, and the above is surrounded by an N type Al0.3Ga0.7As layer 6. Subsequently, Zn is diffused on the layers 3 and 5 using an SiO2 film, having an oblong-shaped window, as a mask, the density of P type impurities of the layer 5 is adjusted, and at the same time, a part of the surface of the layer 3 is selectively changed to P type.
JP7531081A 1981-05-19 1981-05-19 Semiconductor laser Pending JPS57190386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7531081A JPS57190386A (en) 1981-05-19 1981-05-19 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7531081A JPS57190386A (en) 1981-05-19 1981-05-19 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57190386A true JPS57190386A (en) 1982-11-22

Family

ID=13572547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7531081A Pending JPS57190386A (en) 1981-05-19 1981-05-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57190386A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4813051A (en) * 1986-01-21 1989-03-14 501 Sharp Kabushiki Kaisha Semiconductor laser array device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4813051A (en) * 1986-01-21 1989-03-14 501 Sharp Kabushiki Kaisha Semiconductor laser array device

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