JP6817443B2 - ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 - Google Patents
ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 Download PDFInfo
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- JP6817443B2 JP6817443B2 JP2019530787A JP2019530787A JP6817443B2 JP 6817443 B2 JP6817443 B2 JP 6817443B2 JP 2019530787 A JP2019530787 A JP 2019530787A JP 2019530787 A JP2019530787 A JP 2019530787A JP 6817443 B2 JP6817443 B2 JP 6817443B2
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- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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Description
本発明は、陸軍研究所により資金提供を受けた、協力協定番号W911NF−12−2−0064のもとでの政府助成によって為されたものである。政府は、本発明において所定の権利を有する。
Claims (10)
- 半導体デバイスであって、
ワイド・バンド・ギャップ半導体材料を含む、第1の導電型を有するドリフト領域を備える半導体層構造と、
前記半導体デバイスの活性領域内の前記ドリフト領域の上側部分内の、前記第1の導電型の反対である第2の導電型を有する遮蔽パターンであって、前記ドリフト領域の前記上側部分は、前記ドリフト領域の上側表面から前記ドリフト領域内へと延在する、遮蔽パターンと、
前記半導体デバイスの終端領域内の前記ドリフト領域の前記上側部分内の、前記第2の導電型を有する終端構造と、
前記半導体層構造の上側表面内へと延在するゲート・トレンチと、
前記ゲート・トレンチの対向する側部上の、前記第2の導電型を有する第1及び第2のウェル領域と
を備え、
前記半導体層構造は、前記終端構造の上方に延在し、且つ前記終端構造を少なくとも部分的に被覆する半導体層を含み、
前記第1及び第2のウェル領域のうちの1つの下部表面は、前記遮蔽パターンに接触する、半導体デバイス。 - 前記遮蔽パターンの下部は、前記ゲート・トレンチの下部表面が延在するより先へ、前記ドリフト領域内へと下に延在し、前記終端構造は、ガード・リング又は接合終端拡張のうちの1つを備える、請求項1に記載の半導体デバイス。
- 前記ゲート・トレンチの前記下部表面及び側壁を少なくとも部分的に被覆する、前記ゲート・トレンチ内のゲート絶縁層と、
前記ゲート絶縁層上の前記ゲート・トレンチ内のゲート電極と、
前記半導体層構造の前記上側表面上の第1の接触部と、
前記半導体層構造の下側表面上の第2の接触部と
をさらに備え、
前記ドリフト領域の前記上側部分は、前記ドリフト領域の下側部分のドーピング濃度より大きいドーピング濃度を有する電流広がり層を備える、請求項2に記載の半導体デバイス。 - 前記半導体層は、1×1016/cm3未満のドーピング密度を有する、請求項1に記載の半導体デバイス。
- 前記第1及び第2のウェル領域の上側表面は、前記半導体層の上側表面と同一面である、請求項1に記載の半導体デバイス。
- 前記ゲート・トレンチから間をおいて離隔される前記第1のウェル領域の第1の部分は、第1のドーパント濃度を有し、前記ゲート・トレンチに直接的に近接する前記半導体デバイスのチャネルは、前記第1のドーパント濃度より低い第2のドーパント濃度を有する、請求項1に記載の半導体デバイス。
- 前記第1のウェル領域は、前記半導体層構造の下側表面に平行に延在する軸に沿って、前記第2の導電型のドーパントの不均一なドーパント濃度を有する、請求項1に記載の半導体デバイス。
- 前記終端領域内にある前記半導体層の部分は、1×1015/cm3未満の濃度で前記第1の導電型を有するドーパントによってドープされる、請求項1から7までのいずれかに記載の半導体デバイス。
- 前記終端領域内にある前記半導体層の部分は、1×1015/cm3未満の濃度で前記第2の導電型を有するドーパントによってドープされる、請求項1から8までのいずれかに記載の半導体デバイス。
- 前記半導体層の下部表面は、前記遮蔽パターンの上側表面と同一面である、請求項1から9までのいずれかに記載の半導体デバイス。
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10355132B2 (en) | 2017-03-20 | 2019-07-16 | North Carolina State University | Power MOSFETs with superior high frequency figure-of-merit |
JP7006280B2 (ja) * | 2018-01-09 | 2022-01-24 | 富士電機株式会社 | 半導体装置 |
US10777670B2 (en) * | 2018-06-25 | 2020-09-15 | Pakal Technologies, Inc. | Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer |
KR102692122B1 (ko) * | 2019-07-16 | 2024-08-05 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
US11031461B2 (en) * | 2019-08-25 | 2021-06-08 | Genesic Semiconductor Inc. | Manufacture of robust, high-performance devices |
WO2021137341A1 (ko) * | 2020-01-03 | 2021-07-08 | 엘지전자 주식회사 | 금속-산화막 반도체 전계효과 트랜지스터 소자 및 그 제조 방법 |
US11961903B2 (en) * | 2020-05-26 | 2024-04-16 | Hyundai Mobis Co., Ltd. | Power semiconductor device and method of fabricating the same |
KR102531554B1 (ko) * | 2020-07-01 | 2023-05-11 | 서강대학교산학협력단 | 실리콘카바이드 트랜지스터 및 이의 제조방법 |
EP3975266A1 (en) * | 2020-09-28 | 2022-03-30 | Nexperia B.V. | Semiconductor device with improved junction termination extension region |
WO2022128818A1 (de) * | 2020-12-18 | 2022-06-23 | mi2-factory GmbH | Elektronisches halbleiterbauelement und verfahren zur herstellung eines vorbehandelten verbundsubstrats für ein elektronisches halbleiterbauelement |
JP2022168904A (ja) * | 2021-04-27 | 2022-11-09 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US11894455B2 (en) * | 2021-09-22 | 2024-02-06 | Wolfspeed, Inc. | Vertical power devices fabricated using implanted methods |
EP4181212A1 (en) * | 2021-11-11 | 2023-05-17 | Infineon Technologies Dresden GmbH & Co . KG | Semiconductor device |
US11955567B2 (en) * | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
US20230307529A1 (en) * | 2022-03-24 | 2023-09-28 | Wolfspeed, Inc. | Support shield structures for trenched semiconductor devices |
US20240266401A1 (en) * | 2022-04-14 | 2024-08-08 | Suzhou Loongspeed Semiconductor Technology Co., Ltd. | Transistor device and manufacturing method thereof |
US20230369445A1 (en) * | 2022-05-13 | 2023-11-16 | Wolfspeed, Inc. | Vertical power devices having mesas and etched trenches therebetween |
CN114725090B (zh) * | 2022-05-24 | 2022-09-02 | 深圳芯能半导体技术有限公司 | 一种绝缘栅双极型晶体管及其制备方法 |
US20230395594A1 (en) * | 2022-06-02 | 2023-12-07 | Nanya Technology Corporation | Method for fabricating semiconductor device with guard ring |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US7652326B2 (en) * | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
JP2006005275A (ja) * | 2004-06-21 | 2006-01-05 | Toshiba Corp | 電力用半導体素子 |
JP2008103529A (ja) | 2006-10-19 | 2008-05-01 | Toyota Central R&D Labs Inc | 半導体装置 |
JP4356764B2 (ja) * | 2007-04-18 | 2009-11-04 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2009033036A (ja) | 2007-07-30 | 2009-02-12 | Hitachi Ltd | 半導体装置及びこれを用いた電気回路装置 |
US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
US8164139B2 (en) * | 2008-04-29 | 2012-04-24 | Force Mos Technology Co., Ltd. | MOSFET structure with guard ring |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
JP5409247B2 (ja) * | 2009-10-13 | 2014-02-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2011091086A (ja) | 2009-10-20 | 2011-05-06 | Mitsubishi Electric Corp | 半導体装置 |
US8415671B2 (en) * | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
JP5482745B2 (ja) * | 2011-08-10 | 2014-05-07 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2013038329A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置 |
US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
US8785278B2 (en) * | 2012-02-02 | 2014-07-22 | Alpha And Omega Semiconductor Incorporated | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
JP2013219161A (ja) | 2012-04-09 | 2013-10-24 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP5812029B2 (ja) * | 2012-06-13 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP5751213B2 (ja) | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
WO2014061367A1 (ja) | 2012-10-18 | 2014-04-24 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9496331B2 (en) * | 2012-12-07 | 2016-11-15 | Denso Corporation | Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same |
JP5983415B2 (ja) | 2013-01-15 | 2016-08-31 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6064614B2 (ja) | 2013-01-21 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2014175518A (ja) | 2013-03-11 | 2014-09-22 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US9012984B2 (en) * | 2013-03-13 | 2015-04-21 | Cree, Inc. | Field effect transistor devices with regrown p-layers |
US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
US9306061B2 (en) | 2013-03-13 | 2016-04-05 | Cree, Inc. | Field effect transistor devices with protective regions |
EP2973669A4 (en) * | 2013-03-15 | 2016-11-09 | United Silicon Carbide Inc | IMPROVED VJFET DEVICES |
JP2014241368A (ja) | 2013-06-12 | 2014-12-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US10868169B2 (en) * | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
DE112014004583T5 (de) * | 2013-10-04 | 2016-08-18 | Mitsubishi Electric Corporation | Siliciumcarbidhalbleiterbauteil und Verfahren zu dessen Herstellung |
KR101539880B1 (ko) * | 2014-01-02 | 2015-07-27 | 삼성전기주식회사 | 전력 반도체 소자 |
JP6291988B2 (ja) | 2014-04-15 | 2018-03-14 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP6485034B2 (ja) * | 2014-06-16 | 2019-03-20 | 富士電機株式会社 | 半導体装置の製造方法 |
WO2016063683A1 (ja) * | 2014-10-24 | 2016-04-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6354525B2 (ja) | 2014-11-06 | 2018-07-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP6479615B2 (ja) * | 2015-09-14 | 2019-03-06 | 株式会社東芝 | 半導体装置の製造方法 |
JP6693131B2 (ja) * | 2016-01-12 | 2020-05-13 | 富士電機株式会社 | 半導体装置 |
CN105977310B (zh) * | 2016-07-27 | 2019-06-04 | 电子科技大学 | 碳化硅功率器件终端结构及其制造方法 |
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