JP6208579B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6208579B2 JP6208579B2 JP2013269268A JP2013269268A JP6208579B2 JP 6208579 B2 JP6208579 B2 JP 6208579B2 JP 2013269268 A JP2013269268 A JP 2013269268A JP 2013269268 A JP2013269268 A JP 2013269268A JP 6208579 B2 JP6208579 B2 JP 6208579B2
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 230000002093 peripheral effect Effects 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 210000000746 body region Anatomy 0.000 description 21
- 230000015556 catabolic process Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
14:表面電極
18:裏面電極
20:セル領域
22:ソース領域
24:ボディコンタクト領域
26:ボディ領域
28:ドリフト領域
30:ドレイン領域
32:フローティング領域
34:ゲートトレンチ
50:外周領域
54:外周トレンチ
56:p型領域
56a:高面密度領域
56b:低面密度領域
Claims (2)
- 半導体装置であって、
半導体基板と、
前記半導体基板の表面に形成されている表面電極と、
前記半導体基板の裏面に形成されている裏面電極、
を有し、
前記半導体基板が、前記表面電極と前記裏面電極の間をスイッチングする絶縁ゲート型スイッチング素子が形成されている素子領域と、前記素子領域に隣接する外周領域、
を有しており、
前記絶縁ゲート型スイッチング素子が、
前記表面電極に接続されている第1導電型の第1領域と、
前記表面電極に接続されており、前記第1領域に接している第2導電型の第2領域と、
前記第2領域の下側に形成されており、前記第2領域によって前記第1領域から分離されている第1導電型の第3領域と、
前記第2領域に接しているゲート絶縁膜と、
前記ゲート絶縁膜を介して前記第2領域に対向しているゲート電極、
を有しており、
前記外周領域内の前記半導体基板の前記表面に、第1トレンチと、前記第1トレンチから間隔を隔てて配置されている第2トレンチが形成されており、
前記第1トレンチと前記第2トレンチ内に、絶縁膜が形成されており、
前記第1トレンチの底面から前記第2トレンチの底面に跨って延びる第2導電型の第4領域が形成されており、
前記第4領域の下側に、前記第3領域から連続する第1導電型の第5領域が形成されており、
前記第4領域のうちの前記第1トレンチと前記第2トレンチの間の領域内に、前記第4領域のうちの前記第1トレンチの下側の領域と前記第2トレンチの下側の領域よりも、前記半導体基板の厚み方向に見た第2導電型不純物の面密度が低い低面密度領域が形成されており、
オフ状態にある前記絶縁ゲート型スイッチング素子に定格電圧を印加したときに、前記低面密度領域が空乏化し、前記第1トレンチの下側の前記領域の少なくとも一部及び前記第2トレンチの下側の前記領域の少なくとも一部が空乏化せず、前記第1トレンチの下側の前記領域の空乏化しなかった部分と前記第2トレンチの下側の前記領域の空乏化しなかった部分とが前記低面密度領域内の空乏層によって分離される、
半導体装置。 - 半導体装置であって、
半導体基板と、
前記半導体基板の表面に形成されている表面電極と、
前記半導体基板の裏面に形成されている裏面電極、
を有し、
前記半導体基板が、前記表面電極と前記裏面電極の間をスイッチングする絶縁ゲート型スイッチング素子が形成されている素子領域と、前記素子領域に隣接する外周領域、
を有しており、
前記絶縁ゲート型スイッチング素子が、
前記表面電極に接続されている第1導電型の第1領域と、
前記表面電極に接続されており、前記第1領域に接している第2導電型の第2領域と、
前記第2領域の下側に形成されており、前記第2領域によって前記第1領域から分離されている第1導電型の第3領域と、
前記第2領域に接しているゲート絶縁膜と、
前記ゲート絶縁膜を介して前記第2領域に対向しているゲート電極、
を有しており、
前記外周領域内の前記半導体基板の前記表面に、第1トレンチと、前記第1トレンチから間隔を隔てて配置されている第2トレンチが形成されており、
前記第1トレンチと前記第2トレンチ内に、絶縁膜が形成されており、
前記第1トレンチの底面から前記第2トレンチの底面に跨って延びる第2導電型の第4領域が形成されており、
前記第4領域の下側に、前記第3領域から連続する第1導電型の第5領域が形成されており、
前記第4領域が、BとAlを含有しており、
前記第1トレンチの下側に位置する前記第4領域では、前記第1トレンチの底面から離れるにしたがって、Alに対するBの濃度比率が上昇し、
前記第2トレンチの下側に位置する前記第4領域では、前記第2トレンチの底面から離れるにしたがって、Alに対するBの濃度比率が上昇する、
半導体装置。
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US15/107,132 US9853141B2 (en) | 2013-12-26 | 2014-08-04 | Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes |
KR1020167020238A KR101840961B1 (ko) | 2013-12-26 | 2014-08-04 | 반도체 장치 |
CN201480071339.9A CN105849910B (zh) | 2013-12-26 | 2014-08-04 | 半导体装置 |
DE112014006011.9T DE112014006011B4 (de) | 2013-12-26 | 2014-08-04 | Halbleitervorrichtungen |
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CN109346467A (zh) * | 2018-08-17 | 2019-02-15 | 矽力杰半导体技术(杭州)有限公司 | 半导体结构、驱动芯片和半导体结构的制造方法 |
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US20170040446A1 (en) | 2017-02-09 |
KR20160102063A (ko) | 2016-08-26 |
CN105849910A (zh) | 2016-08-10 |
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