JP5165995B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5165995B2 JP5165995B2 JP2007289198A JP2007289198A JP5165995B2 JP 5165995 B2 JP5165995 B2 JP 5165995B2 JP 2007289198 A JP2007289198 A JP 2007289198A JP 2007289198 A JP2007289198 A JP 2007289198A JP 5165995 B2 JP5165995 B2 JP 5165995B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- conductivity type
- impurity concentration
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims description 111
- 238000009792 diffusion process Methods 0.000 claims description 62
- 230000015556 catabolic process Effects 0.000 description 20
- 210000004027 cell Anatomy 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 210000003771 C cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Description
先ず、本発明の第1の実施形態について説明する。
図1は、本実施形態に係る電力用半導体装置を例示する断面図、及び縦軸にこの電力用半導体装置の終端部における位置をとり、横軸に不純物濃度をとって、ガードリング層及びエピタキシャル層の不純物濃度プロファイルを例示するグラフ図である。
なお、図1において、グラフ図の縦軸で表す位置は、断面図における縦方向の位置と対応している。後述する図3、図4、図5及び図10においても同様である。
図2(a)は、図1に示すグラフ図と同じ図、すなわち、縦軸に電力用半導体装置の終端部における縦方向の位置をとり、横軸に不純物濃度をとって、本実施形態における濃度分布プロファイルを例示するグラフ図であり、(b)は、縦軸に縦方向の位置をとり、横軸に電界強度をとって、本実施形態における電界分布を例示するグラフ図であり、(c)は、縦軸に縦方向の位置をとり、横軸に不純物濃度をとって、比較例における濃度分布プロファイルを例示するグラフ図であり、(d)は、縦軸に縦方向の位置をとり、横軸に電界強度をとって、比較例における電界分布を例示するグラフ図である。
図3は、本実施形態に係る電力用半導体装置を例示する断面図、及び縦軸にこの電力用半導体装置の終端部における位置をとり、横軸に不純物濃度をとって、ガードリング層及びエピタキシャル層の不純物濃度プロファイルを例示するグラフ図である。
図4は、本実施形態に係る電力用半導体装置を例示する断面図、及び縦軸にこの電力用半導体装置の終端部における位置をとり、横軸に不純物濃度をとって、ガードリング層及びエピタキシャル層の不純物濃度プロファイルを例示するグラフ図である。
図5は、本実施形態に係る電力用半導体装置を例示する断面図、及び縦軸にこの電力用半導体装置の終端部における位置をとり、横軸に不純物濃度をとって、ガードリング層及びエピタキシャル層の不純物濃度プロファイルを例示するグラフ図である。
本実施形態は、前述の第1及び第2の実施形態に係る電力用半導体装置の製造方法の実施形態である。
図6(a)及び(b)は、本実施形態に係る電力用半導体装置の製造方法を例示する工程断面図である。
図7は、横軸に下層拡散層のドーズ量をとり、縦軸に終端部の耐圧をとって、下層拡散層のドーズ量が終端部の耐圧に及ぼす影響のシミュレーション結果を例示するグラフ図である。
本実施形態は、前述の第1又は第2の実施形態に係る電力用半導体装置の製造方法の実施形態である。
図9(a)及び(b)は、本実施形態に係る電力用半導体装置の製造方法を例示する工程断面図である。
図10は、本比較例に係る電力用半導体装置を例示する断面図、及び縦軸にこの電力用半導体装置の終端部における位置をとり、横軸に不純物濃度をとって、ガードリング層及びエピタキシャル層の不純物濃度プロファイルを例示するグラフ図である。
Claims (5)
- セル部及び終端部の双方に形成された第1導電型の第1半導体層と、
前記セル部における前記第1半導体層上に形成された第2導電型の第2半導体層と、
前記第2半導体層上の一部に形成された第1導電型の第3半導体層と、
前記終端部における前記第1半導体層上に形成された第2導電型のガードリング層と、
を備え、
前記ガードリング層の不純物濃度は、全体的に下側が相対的に高く上側が相対的に低くなるように傾斜しているか又は一定であり、かつ、前記ガードリング層の不純物濃度の最大値は、前記第1半導体層における不純物濃度が深さ方向に関してほぼ一定となる部分の不純物濃度と同等であることを特徴とする半導体装置。 - 前記第1半導体層中に形成され、前記第1半導体層の上面に平行な方向に沿って相互に離隔して配列され、前記第2半導体層に接続された複数本の第2導電型のピラー層をさらに備えたことを特徴とする請求項1記載の半導体装置。
- 前記第3半導体層、前記第2半導体層及び前記第1半導体層には、前記第3半導体層及び前記第2半導体層を貫通して前記第1半導体層に到達するトレンチが形成されており、
前記トレンチの内面上に形成された絶縁膜と、
前記トレンチ内の下部に埋設された埋込電極と、
前記トレンチ内の上部に埋設された制御電極と、
をさらに備えたことを特徴とする請求項1記載の半導体装置。 - セル部及び終端部の双方に形成された第1導電型の第1半導体層、前記セル部における前記第1半導体層上に形成された第2導電型の第2半導体層、及び前記第2半導体層上の一部に形成された第1導電型の第3半導体層が積層された積層体の前記終端部に対して第2導電型不純物を注入することにより、下層拡散層を形成する工程と、
前記積層体の終端部に対して第2導電型不純物を注入することにより、前記下層拡散層上に、不純物濃度が前記下層拡散層の不純物濃度以下である上層拡散層を形成する工程と、
を備え、
前記下層拡散層の不純物濃度の最大値を、前記第1半導体層における不純物濃度が深さ方向に関してほぼ一定となる部分の不純物濃度と同等とすることを特徴とする半導体装置の製造方法。 - セル部及び終端部の双方に形成された第1導電型の第1半導体層、前記セル部における前記第1半導体層上に形成された第2導電型の第2半導体層、及び前記第2半導体層上の一部に形成された第1導電型の第3半導体層が積層された積層体の前記終端部に対して第2導電型不純物を注入することにより、第2導電型拡散層を形成する工程と、
前記積層体の終端部に対して第1導電型不純物を注入することにより、前記第2導電型拡散層の上層部分において実効的な第2導電型不純物の濃度を低減する工程と、
を備え、
前記第2導電型拡散層の実効的な第2導電型不純物濃度の最大値を、前記第1半導体層における第1導電型不純物濃度が深さ方向に関してほぼ一定となる部分の実効的な第1導電型不純物濃度と同等とすることを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007289198A JP5165995B2 (ja) | 2007-11-07 | 2007-11-07 | 半導体装置及びその製造方法 |
US12/266,331 US8106454B2 (en) | 2007-11-07 | 2008-11-06 | Power semiconductor device and method for manufacturing same |
US13/327,644 US20120086073A1 (en) | 2007-11-07 | 2011-12-15 | Power semiconductor device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007289198A JP5165995B2 (ja) | 2007-11-07 | 2007-11-07 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009117623A JP2009117623A (ja) | 2009-05-28 |
JP5165995B2 true JP5165995B2 (ja) | 2013-03-21 |
Family
ID=40640976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007289198A Expired - Fee Related JP5165995B2 (ja) | 2007-11-07 | 2007-11-07 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8106454B2 (ja) |
JP (1) | JP5165995B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5149922B2 (ja) * | 2010-02-23 | 2013-02-20 | 富士電機株式会社 | 半導体素子 |
US20110278666A1 (en) * | 2010-05-13 | 2011-11-17 | Wei Liu | Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture |
EP2421044B1 (en) * | 2010-08-16 | 2015-07-29 | Nxp B.V. | Edge Termination Region for Semiconductor Device |
JP2012074441A (ja) * | 2010-09-28 | 2012-04-12 | Toshiba Corp | 電力用半導体装置 |
US8692318B2 (en) * | 2011-05-10 | 2014-04-08 | Nanya Technology Corp. | Trench MOS structure and method for making the same |
TWI574416B (zh) * | 2015-04-14 | 2017-03-11 | 新唐科技股份有限公司 | 半導體裝置及其製造方法 |
JP6602700B2 (ja) * | 2016-03-14 | 2019-11-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP7029710B2 (ja) * | 2017-06-16 | 2022-03-04 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4528460B2 (ja) * | 2000-06-30 | 2010-08-18 | 株式会社東芝 | 半導体素子 |
JP4782923B2 (ja) * | 2000-12-28 | 2011-09-28 | 日本インター株式会社 | 半導体装置 |
JP4940546B2 (ja) * | 2004-12-13 | 2012-05-30 | 株式会社デンソー | 半導体装置 |
JP4860929B2 (ja) | 2005-01-11 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2006278826A (ja) * | 2005-03-30 | 2006-10-12 | Toshiba Corp | 半導体素子及びその製造方法 |
JP2006313892A (ja) * | 2005-04-07 | 2006-11-16 | Toshiba Corp | 半導体素子 |
US7541643B2 (en) * | 2005-04-07 | 2009-06-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP4955958B2 (ja) * | 2005-08-04 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5002148B2 (ja) * | 2005-11-24 | 2012-08-15 | 株式会社東芝 | 半導体装置 |
JP2007221024A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Corp | 半導体装置 |
-
2007
- 2007-11-07 JP JP2007289198A patent/JP5165995B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-06 US US12/266,331 patent/US8106454B2/en not_active Expired - Fee Related
-
2011
- 2011-12-15 US US13/327,644 patent/US20120086073A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US8106454B2 (en) | 2012-01-31 |
US20090127616A1 (en) | 2009-05-21 |
JP2009117623A (ja) | 2009-05-28 |
US20120086073A1 (en) | 2012-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7928505B2 (en) | Semiconductor device with vertical trench and lightly doped region | |
US8227854B2 (en) | Semiconductor device having first and second resurf layers | |
JP5165995B2 (ja) | 半導体装置及びその製造方法 | |
US9252251B2 (en) | Semiconductor component with a space saving edge structure | |
US8169023B2 (en) | Power semiconductor device | |
JP4813762B2 (ja) | 半導体装置及びその製造方法 | |
JP2009289904A (ja) | 半導体装置 | |
TWI769357B (zh) | 新型超級結mosfet結構 | |
US9064952B2 (en) | Semiconductor device | |
JP2008124346A (ja) | 電力用半導体素子 | |
JP2009043966A (ja) | 半導体装置及びその製造方法 | |
KR20140046018A (ko) | 절연 게이트 바이폴라 트랜지스터 | |
US9006062B2 (en) | Method of manufacturing a semiconductor device including an edge area | |
JP2014241435A (ja) | 半導体装置 | |
CN107251198B (zh) | 绝缘栅功率半导体装置以及用于制造这种装置的方法 | |
JP2010056510A (ja) | 半導体装置 | |
JP2015090917A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2010219361A (ja) | 半導体装置及びその製造方法 | |
JP2016025177A (ja) | スイッチング素子 | |
JP2017195224A (ja) | スイッチング素子 | |
JP2014509453A (ja) | パワー半導体デバイス | |
JP2012004458A (ja) | 半導体装置およびその製造方法 | |
US11522075B2 (en) | Semiconductor device and method of manufacturing same | |
JP2008060152A (ja) | 半導体装置及びその製造方法 | |
JP2009105219A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120907 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120913 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121220 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5165995 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |