JP2013012723A5 - - Google Patents
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- JP2013012723A5 JP2013012723A5 JP2012114056A JP2012114056A JP2013012723A5 JP 2013012723 A5 JP2013012723 A5 JP 2013012723A5 JP 2012114056 A JP2012114056 A JP 2012114056A JP 2012114056 A JP2012114056 A JP 2012114056A JP 2013012723 A5 JP2013012723 A5 JP 2013012723A5
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- JP
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- tfet
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- 230000005669 field effect Effects 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000002019 doping agent Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000002070 nanowire Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161488934P | 2011-05-23 | 2011-05-23 | |
| US61/488,934 | 2011-05-23 | ||
| EP11173950.4A EP2528099B1 (en) | 2011-05-23 | 2011-07-14 | Line- tunneling Tunnel Field-Effect Transistor (TFET) and manufacturing method |
| EP11173950.4 | 2011-07-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013012723A JP2013012723A (ja) | 2013-01-17 |
| JP2013012723A5 true JP2013012723A5 (enExample) | 2015-06-11 |
| JP6013777B2 JP6013777B2 (ja) | 2016-10-25 |
Family
ID=45715334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012114056A Active JP6013777B2 (ja) | 2011-05-23 | 2012-05-18 | ライントンネリングトンネル電界効果トランジスタ（ｔｆｅｔ）及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8629428B2 (enExample) |
| EP (1) | EP2528099B1 (enExample) |
| JP (1) | JP6013777B2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664165B (zh) * | 2012-05-18 | 2014-06-04 | 北京大学 | 基于标准cmos ic工艺制备互补隧穿场效应晶体管的方法 |
| US9209288B2 (en) | 2012-12-21 | 2015-12-08 | Intel Corporation | Reduced scale resonant tunneling field effect transistor |
| JP6083704B2 (ja) * | 2013-03-25 | 2017-02-22 | 国立研究開発法人産業技術総合研究所 | トンネルｆｅｔのデバイスシミュレーション方法及びシステム並びにトンネルｆｅｔのコンパクトモデル設計方法及びコンパクトモデル |
| US9634114B2 (en) | 2013-08-13 | 2017-04-25 | National University Corporation Hakkaido University | Tunnel field-effect transistor, method for manufacturing same, and switch element |
| JP5886802B2 (ja) | 2013-08-29 | 2016-03-16 | 株式会社東芝 | 半導体装置 |
| CN103474459B (zh) * | 2013-09-06 | 2016-01-27 | 北京大学深圳研究生院 | 隧穿场效应晶体管 |
| JP6083707B2 (ja) * | 2013-09-09 | 2017-02-22 | 国立研究開発法人産業技術総合研究所 | 半導体装置およびその製造方法 |
| CN103560144B (zh) * | 2013-11-13 | 2016-02-17 | 北京大学 | 抑制隧穿晶体管泄漏电流的方法及相应的器件和制备方法 |
| US9419114B2 (en) * | 2014-01-17 | 2016-08-16 | Imec Vzw | Tunnel field-effect transistor |
| US9281363B2 (en) | 2014-04-18 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Circuits using gate-all-around technology |
| EP2993696B1 (en) * | 2014-09-02 | 2020-08-05 | IMEC vzw | Heterosection tunnel field-effect transistor (TFET) |
| KR102154185B1 (ko) | 2014-09-19 | 2020-09-09 | 삼성전자 주식회사 | 반도체 소자 |
| EP3010044B1 (en) | 2014-10-13 | 2019-02-13 | IMEC vzw | Layered structure of a p-TFET |
| US10504721B2 (en) | 2015-04-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Staggered-type tunneling field effect transistor |
| US9526436B2 (en) | 2015-05-19 | 2016-12-27 | Samsung Electronics Co., Ltd | Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices |
| JP6487288B2 (ja) * | 2015-07-17 | 2019-03-20 | 国立大学法人東北大学 | 電界効果トランジスタおよびその駆動方法 |
| CN105390531B (zh) * | 2015-10-27 | 2018-02-13 | 北京大学 | 一种隧穿场效应晶体管的制备方法 |
| US9735267B1 (en) | 2016-01-28 | 2017-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device structure |
| US10141436B2 (en) * | 2016-04-04 | 2018-11-27 | Purdue Research Foundation | Tunnel field effect transistor having anisotropic effective mass channel |
| CN108780812B (zh) * | 2016-06-30 | 2020-10-16 | 华为技术有限公司 | 隧穿场效应晶体管及其制备方法 |
| US10236386B2 (en) | 2017-01-17 | 2019-03-19 | The Board Of Trustees Of The University Of Illinois | Vertical hetero- and homo-junction tunnel field-effect transistors |
| US10475908B2 (en) * | 2017-04-25 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of fabricating the same |
| WO2019005113A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | RESISTIVE LIVE MEMORY COMPRISING A TUNNEL SOURCE ACCESS TRANSISTOR |
| CN110379851B (zh) * | 2019-06-17 | 2023-01-10 | 宁波大学 | 一种基于tfet的三输入多数逻辑器件 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7329937B2 (en) * | 2005-04-27 | 2008-02-12 | International Business Machines Corporation | Asymmetric field effect transistors (FETs) |
| EP1900681B1 (en) * | 2006-09-15 | 2017-03-15 | Imec | Tunnel Field-Effect Transistors based on silicon nanowires |
| US8120115B2 (en) | 2007-03-12 | 2012-02-21 | Imec | Tunnel field-effect transistor with gated tunnel barrier |
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2011
- 2011-07-14 EP EP11173950.4A patent/EP2528099B1/en active Active
-
2012
- 2012-05-17 US US13/474,526 patent/US8629428B2/en not_active Expired - Fee Related
- 2012-05-18 JP JP2012114056A patent/JP6013777B2/ja active Active