JP6013777B2 - ライントンネリングトンネル電界効果トランジスタ（ｔｆｅｔ）及びその製造方法 - Google Patents

ライントンネリングトンネル電界効果トランジスタ（ｔｆｅｔ）及びその製造方法 Download PDF

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JP6013777B2
JP6013777B2 JP2012114056A JP2012114056A JP6013777B2 JP 6013777 B2 JP6013777 B2 JP 6013777B2 JP 2012114056 A JP2012114056 A JP 2012114056A JP 2012114056 A JP2012114056 A JP 2012114056A JP 6013777 B2 JP6013777 B2 JP 6013777B2
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tfet
channel
drain
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JP2013012723A (ja
JP2013012723A5 (enExample
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アン・エス・フェルフルスト
クオ−シン・カオ
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012114056A 2011-05-23 2012-05-18 ライントンネリングトンネル電界効果トランジスタ（ｔｆｅｔ）及びその製造方法 Active JP6013777B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161488934P 2011-05-23 2011-05-23
US61/488,934 2011-05-23
EP11173950.4A EP2528099B1 (en) 2011-05-23 2011-07-14 Line- tunneling Tunnel Field-Effect Transistor (TFET) and manufacturing method
EP11173950.4 2011-07-14

Publications (3)

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JP2013012723A JP2013012723A (ja) 2013-01-17
JP2013012723A5 JP2013012723A5 (enExample) 2015-06-11
JP6013777B2 true JP6013777B2 (ja) 2016-10-25

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JP2012114056A Active JP6013777B2 (ja) 2011-05-23 2012-05-18 ライントンネリングトンネル電界効果トランジスタ（ｔｆｅｔ）及びその製造方法

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US (1) US8629428B2 (enExample)
EP (1) EP2528099B1 (enExample)
JP (1) JP6013777B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102664165B (zh) * 2012-05-18 2014-06-04 北京大学 基于标准cmos ic工艺制备互补隧穿场效应晶体管的方法
US9209288B2 (en) 2012-12-21 2015-12-08 Intel Corporation Reduced scale resonant tunneling field effect transistor
JP6083704B2 (ja) * 2013-03-25 2017-02-22 国立研究開発法人産業技術総合研究所 トンネルｆｅｔのデバイスシミュレーション方法及びシステム並びにトンネルｆｅｔのコンパクトモデル設計方法及びコンパクトモデル
US9634114B2 (en) 2013-08-13 2017-04-25 National University Corporation Hakkaido University Tunnel field-effect transistor, method for manufacturing same, and switch element
JP5886802B2 (ja) 2013-08-29 2016-03-16 株式会社東芝 半導体装置
CN103474459B (zh) * 2013-09-06 2016-01-27 北京大学深圳研究生院 隧穿场效应晶体管
JP6083707B2 (ja) * 2013-09-09 2017-02-22 国立研究開発法人産業技術総合研究所 半導体装置およびその製造方法
CN103560144B (zh) * 2013-11-13 2016-02-17 北京大学 抑制隧穿晶体管泄漏电流的方法及相应的器件和制备方法
US9419114B2 (en) * 2014-01-17 2016-08-16 Imec Vzw Tunnel field-effect transistor
US9281363B2 (en) 2014-04-18 2016-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Circuits using gate-all-around technology
EP2993696B1 (en) * 2014-09-02 2020-08-05 IMEC vzw Heterosection tunnel field-effect transistor (TFET)
KR102154185B1 (ko) 2014-09-19 2020-09-09 삼성전자 주식회사 반도체 소자
EP3010044B1 (en) 2014-10-13 2019-02-13 IMEC vzw Layered structure of a p-TFET
US10504721B2 (en) 2015-04-30 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Staggered-type tunneling field effect transistor
US9526436B2 (en) 2015-05-19 2016-12-27 Samsung Electronics Co., Ltd Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
JP6487288B2 (ja) * 2015-07-17 2019-03-20 国立大学法人東北大学 電界効果トランジスタおよびその駆動方法
CN105390531B (zh) * 2015-10-27 2018-02-13 北京大学 一种隧穿场效应晶体管的制备方法
US9735267B1 (en) 2016-01-28 2017-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US10141436B2 (en) * 2016-04-04 2018-11-27 Purdue Research Foundation Tunnel field effect transistor having anisotropic effective mass channel
CN108780812B (zh) * 2016-06-30 2020-10-16 华为技术有限公司 隧穿场效应晶体管及其制备方法
US10236386B2 (en) 2017-01-17 2019-03-19 The Board Of Trustees Of The University Of Illinois Vertical hetero- and homo-junction tunnel field-effect transistors
US10475908B2 (en) * 2017-04-25 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
WO2019005113A1 (en) * 2017-06-30 2019-01-03 Intel Corporation RESISTIVE LIVE MEMORY COMPRISING A TUNNEL SOURCE ACCESS TRANSISTOR
CN110379851B (zh) * 2019-06-17 2023-01-10 宁波大学 一种基于tfet的三输入多数逻辑器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7329937B2 (en) * 2005-04-27 2008-02-12 International Business Machines Corporation Asymmetric field effect transistors (FETs)
EP1900681B1 (en) * 2006-09-15 2017-03-15 Imec Tunnel Field-Effect Transistors based on silicon nanowires
US8120115B2 (en) 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier

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Publication number Publication date
JP2013012723A (ja) 2013-01-17
US20120298959A1 (en) 2012-11-29
US8629428B2 (en) 2014-01-14
EP2528099A1 (en) 2012-11-28
EP2528099B1 (en) 2015-03-04

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