JP2013503471A5 - - Google Patents
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- Publication number
- JP2013503471A5 JP2013503471A5 JP2012526177A JP2012526177A JP2013503471A5 JP 2013503471 A5 JP2013503471 A5 JP 2013503471A5 JP 2012526177 A JP2012526177 A JP 2012526177A JP 2012526177 A JP2012526177 A JP 2012526177A JP 2013503471 A5 JP2013503471 A5 JP 2013503471A5
- Authority
- JP
- Japan
- Prior art keywords
- tunnel
- inductive
- tfet
- core element
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 21
- 239000000463 material Substances 0.000 claims 17
- 230000001939 inductive effect Effects 0.000 claims 16
- 239000012212 insulator Substances 0.000 claims 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 claims 1
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000002070 nanowire Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/550,857 US8288803B2 (en) | 2009-08-31 | 2009-08-31 | Tunnel field effect devices |
| US12/550,857 | 2009-08-31 | ||
| PCT/IB2010/053884 WO2011024152A1 (en) | 2009-08-31 | 2010-08-30 | Tunnel field effect devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013503471A JP2013503471A (ja) | 2013-01-31 |
| JP2013503471A5 true JP2013503471A5 (enExample) | 2013-10-10 |
| JP5501463B2 JP5501463B2 (ja) | 2014-05-21 |
Family
ID=43127353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012526177A Expired - Fee Related JP5501463B2 (ja) | 2009-08-31 | 2010-08-30 | トンネル電界効果デバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8288803B2 (enExample) |
| JP (1) | JP5501463B2 (enExample) |
| CN (1) | CN102484132B (enExample) |
| DE (1) | DE112010003495B4 (enExample) |
| GB (1) | GB2485495B (enExample) |
| TW (1) | TWI463653B (enExample) |
| WO (1) | WO2011024152A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8890120B2 (en) | 2012-11-16 | 2014-11-18 | Intel Corporation | Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs |
| EP3050111A4 (en) * | 2013-09-27 | 2017-06-07 | Intel Corporation | Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon |
| GB2518679A (en) | 2013-09-30 | 2015-04-01 | Ibm | Reconfigurable tunnel field-effect transistors |
| KR102157825B1 (ko) | 2014-01-16 | 2020-09-18 | 삼성전자주식회사 | 터널링 전계 효과 트랜지스터 |
| CN104835840B (zh) * | 2015-03-24 | 2017-09-19 | 北京大学 | 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法 |
| US10026830B2 (en) | 2015-04-29 | 2018-07-17 | Stmicroelectronics, Inc. | Tunneling field effect transistor (TFET) having a semiconductor fin structure |
| JP6159777B2 (ja) * | 2015-10-28 | 2017-07-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| JP6080989B2 (ja) * | 2016-01-06 | 2017-02-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| JP6375316B2 (ja) * | 2016-01-06 | 2018-08-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| JP6114434B2 (ja) * | 2016-04-21 | 2017-04-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| CN108369960A (zh) | 2016-04-22 | 2018-08-03 | 华为技术有限公司 | 隧穿场效应晶体管及其制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7180107B2 (en) * | 2004-05-25 | 2007-02-20 | International Business Machines Corporation | Method of fabricating a tunneling nanotube field effect transistor |
| US7465976B2 (en) * | 2005-05-13 | 2008-12-16 | Intel Corporation | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions |
| US20070052012A1 (en) * | 2005-08-24 | 2007-03-08 | Micron Technology, Inc. | Vertical tunneling nano-wire transistor |
| US7893476B2 (en) * | 2006-09-15 | 2011-02-22 | Imec | Tunnel effect transistors based on silicon nanowires |
| EP1901355B1 (en) * | 2006-09-15 | 2015-11-11 | Imec | Tunnel effect transistors based on monocrystalline nanowires having a heterostructure |
| US8120115B2 (en) * | 2007-03-12 | 2012-02-21 | Imec | Tunnel field-effect transistor with gated tunnel barrier |
| US20090034355A1 (en) * | 2007-07-30 | 2009-02-05 | Qimonda Ag | Integrated circuit including memory cells with tunnel fet as selection transistor |
-
2009
- 2009-08-31 US US12/550,857 patent/US8288803B2/en active Active
-
2010
- 2010-06-28 TW TW099121078A patent/TWI463653B/zh active
- 2010-08-30 CN CN201080038343.7A patent/CN102484132B/zh active Active
- 2010-08-30 DE DE112010003495T patent/DE112010003495B4/de active Active
- 2010-08-30 GB GB1200880.1A patent/GB2485495B/en not_active Expired - Fee Related
- 2010-08-30 WO PCT/IB2010/053884 patent/WO2011024152A1/en not_active Ceased
- 2010-08-30 JP JP2012526177A patent/JP5501463B2/ja not_active Expired - Fee Related
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