TWI463653B - 穿隧場效應元件 - Google Patents

穿隧場效應元件 Download PDF

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Publication number
TWI463653B
TWI463653B TW099121078A TW99121078A TWI463653B TW I463653 B TWI463653 B TW I463653B TW 099121078 A TW099121078 A TW 099121078A TW 99121078 A TW99121078 A TW 99121078A TW I463653 B TWI463653 B TW I463653B
Authority
TW
Taiwan
Prior art keywords
semiconductor material
core unit
semiconductor
energy
outer sheath
Prior art date
Application number
TW099121078A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133837A (en
Inventor
比約克米迦勒Ｔ
卡格西格弗里德Ｆ
諾赫約阿希姆
里爾海克Ｅ
里斯沃爾特Ｈ
所羅門保羅Ｍ
Original Assignee
萬國商業機器公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 萬國商業機器公司 filed Critical 萬國商業機器公司
Publication of TW201133837A publication Critical patent/TW201133837A/zh
Application granted granted Critical
Publication of TWI463653B publication Critical patent/TWI463653B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
TW099121078A 2009-08-31 2010-06-28 穿隧場效應元件 TWI463653B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/550,857 US8288803B2 (en) 2009-08-31 2009-08-31 Tunnel field effect devices

Publications (2)

Publication Number Publication Date
TW201133837A TW201133837A (en) 2011-10-01
TWI463653B true TWI463653B (zh) 2014-12-01

Family

ID=43127353

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099121078A TWI463653B (zh) 2009-08-31 2010-06-28 穿隧場效應元件

Country Status (7)

Country Link
US (1) US8288803B2 (enExample)
JP (1) JP5501463B2 (enExample)
CN (1) CN102484132B (enExample)
DE (1) DE112010003495B4 (enExample)
GB (1) GB2485495B (enExample)
TW (1) TWI463653B (enExample)
WO (1) WO2011024152A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
KR102157825B1 (ko) 2014-01-16 2020-09-18 삼성전자주식회사 터널링 전계 효과 트랜지스터
CN104835840B (zh) * 2015-03-24 2017-09-19 北京大学 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6159777B2 (ja) * 2015-10-28 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6080989B2 (ja) * 2016-01-06 2017-02-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6114434B2 (ja) * 2016-04-21 2017-04-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN108369960A (zh) 2016-04-22 2018-08-03 华为技术有限公司 隧穿场效应晶体管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603228A (en) * 2004-05-25 2006-01-16 Ibm Method of fabricating a tunneling nanotube field effect transistor
US20080224224A1 (en) * 2007-03-12 2008-09-18 Interuniversitair Microelektronica Centrum Vzw (Imec) Tunnel field-effect transistor with gated tunnel barrier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
US7893476B2 (en) * 2006-09-15 2011-02-22 Imec Tunnel effect transistors based on silicon nanowires
EP1901355B1 (en) * 2006-09-15 2015-11-11 Imec Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603228A (en) * 2004-05-25 2006-01-16 Ibm Method of fabricating a tunneling nanotube field effect transistor
US20080224224A1 (en) * 2007-03-12 2008-09-18 Interuniversitair Microelektronica Centrum Vzw (Imec) Tunnel field-effect transistor with gated tunnel barrier

Also Published As

Publication number Publication date
US8288803B2 (en) 2012-10-16
JP2013503471A (ja) 2013-01-31
TW201133837A (en) 2011-10-01
GB201200880D0 (en) 2012-02-29
GB2485495B (en) 2013-10-30
US20110049474A1 (en) 2011-03-03
DE112010003495T5 (de) 2012-09-20
CN102484132A (zh) 2012-05-30
JP5501463B2 (ja) 2014-05-21
CN102484132B (zh) 2014-07-30
WO2011024152A1 (en) 2011-03-03
DE112010003495B4 (de) 2013-12-12
GB2485495A (en) 2012-05-16

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