GB2485495B - Tunnel field effect devices - Google Patents

Tunnel field effect devices

Info

Publication number
GB2485495B
GB2485495B GB1200880.1A GB201200880A GB2485495B GB 2485495 B GB2485495 B GB 2485495B GB 201200880 A GB201200880 A GB 201200880A GB 2485495 B GB2485495 B GB 2485495B
Authority
GB
United Kingdom
Prior art keywords
outer sheath
core element
field effect
tfet
effect devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1200880.1A
Other languages
English (en)
Other versions
GB201200880D0 (en
GB2485495A (en
Inventor
Mikael T Bjoerk
Siegfried Friedrich Karg
Joachim Knoch
Heike E Riel
Walter H Riess
Paul M Solomon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB201200880D0 publication Critical patent/GB201200880D0/en
Publication of GB2485495A publication Critical patent/GB2485495A/en
Application granted granted Critical
Publication of GB2485495B publication Critical patent/GB2485495B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
GB1200880.1A 2009-08-31 2010-08-30 Tunnel field effect devices Expired - Fee Related GB2485495B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/550,857 US8288803B2 (en) 2009-08-31 2009-08-31 Tunnel field effect devices
PCT/IB2010/053884 WO2011024152A1 (en) 2009-08-31 2010-08-30 Tunnel field effect devices

Publications (3)

Publication Number Publication Date
GB201200880D0 GB201200880D0 (en) 2012-02-29
GB2485495A GB2485495A (en) 2012-05-16
GB2485495B true GB2485495B (en) 2013-10-30

Family

ID=43127353

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1200880.1A Expired - Fee Related GB2485495B (en) 2009-08-31 2010-08-30 Tunnel field effect devices

Country Status (7)

Country Link
US (1) US8288803B2 (enExample)
JP (1) JP5501463B2 (enExample)
CN (1) CN102484132B (enExample)
DE (1) DE112010003495B4 (enExample)
GB (1) GB2485495B (enExample)
TW (1) TWI463653B (enExample)
WO (1) WO2011024152A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
KR102157825B1 (ko) 2014-01-16 2020-09-18 삼성전자주식회사 터널링 전계 효과 트랜지스터
CN104835840B (zh) * 2015-03-24 2017-09-19 北京大学 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6159777B2 (ja) * 2015-10-28 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6080989B2 (ja) * 2016-01-06 2017-02-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6114434B2 (ja) * 2016-04-21 2017-04-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN108369960A (zh) 2016-04-22 2018-08-03 华为技术有限公司 隧穿场效应晶体管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1901355A1 (en) * 2006-09-15 2008-03-19 Interuniversitair Microelektronica Centrum Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US7893476B2 (en) * 2006-09-15 2011-02-22 Imec Tunnel effect transistors based on silicon nanowires
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1901355A1 (en) * 2006-09-15 2008-03-19 Interuniversitair Microelektronica Centrum Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure

Also Published As

Publication number Publication date
US8288803B2 (en) 2012-10-16
TWI463653B (zh) 2014-12-01
JP2013503471A (ja) 2013-01-31
TW201133837A (en) 2011-10-01
GB201200880D0 (en) 2012-02-29
US20110049474A1 (en) 2011-03-03
DE112010003495T5 (de) 2012-09-20
CN102484132A (zh) 2012-05-30
JP5501463B2 (ja) 2014-05-21
CN102484132B (zh) 2014-07-30
WO2011024152A1 (en) 2011-03-03
DE112010003495B4 (de) 2013-12-12
GB2485495A (en) 2012-05-16

Similar Documents

Publication Publication Date Title
GB2485495B (en) Tunnel field effect devices
GB2524677A (en) Deep gate-all-around semiconductor device having germanium or group III-V active layer
SG170670A1 (en) Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current
GB2530197A (en) Tunneling field effect transistors (TFETS) with undoped drain underlap wrap-around regions
GB2506558A (en) Tunnel field-effect transistor
SG155151A1 (en) Integrated circuit system for suppressing short channel effects
WO2014051728A3 (en) Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
TW200742045A (en) Semiconductor device having a recess channel transistor
EP4372824A3 (en) Semiconductor device, and method for manufacturing the same
SG151168A1 (en) Multiple gate field effect transistor structure and method for fabricating same
TW200943486A (en) Anti-fuse and method for forming the same, unit cell of non volatile memory device with the same
EP2846358A3 (en) Semiconductor device and manufacturing method thereof
JP2011192976A5 (enExample)
TW200715416A (en) Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor
SG169278A1 (en) Integrated circuit system with band to band tunneling and method of manufacture thereof
WO2010078054A3 (en) Tunnel field effect transistor and method of manufacturing same
JP2011119690A5 (enExample)
WO2012039754A3 (en) Light emitting and lasing semiconductor methods and devices
GB2493238A (en) Graphene channel-based devices and methods for fabrication thereof
WO2011084262A3 (en) Semiconductor device having doped epitaxial region and its methods of fabrication
US20140339569A1 (en) Semiconductor device
TW201232785A (en) Semiconductor device and method for manufacturing semiconductor device
WO2011071598A3 (en) Quantum-well-based semiconductor devices
WO2011157814A3 (en) Power semiconductor device
ATE545155T1 (de) Leistungshalbleiterbauelement

Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20131107

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20160830