JP5501463B2 - トンネル電界効果デバイス - Google Patents

トンネル電界効果デバイス Download PDF

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Publication number
JP5501463B2
JP5501463B2 JP2012526177A JP2012526177A JP5501463B2 JP 5501463 B2 JP5501463 B2 JP 5501463B2 JP 2012526177 A JP2012526177 A JP 2012526177A JP 2012526177 A JP2012526177 A JP 2012526177A JP 5501463 B2 JP5501463 B2 JP 5501463B2
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JP
Japan
Prior art keywords
tfet
semiconductor
tunnel
semiconductor material
core element
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Expired - Fee Related
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JP2012526177A
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English (en)
Japanese (ja)
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JP2013503471A (ja
JP2013503471A5 (enExample
Inventor
ビョーク・ミカエル・ティー
カーグ・シェグフライド・エフ
ノック・ホアキム
リエル・ハイク・イー
リエス・ウォルター・エイチ
ソロモン・ポール・エム
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International Business Machines Corp
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International Business Machines Corp
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Publication of JP2013503471A5 publication Critical patent/JP2013503471A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
JP2012526177A 2009-08-31 2010-08-30 トンネル電界効果デバイス Expired - Fee Related JP5501463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/550,857 US8288803B2 (en) 2009-08-31 2009-08-31 Tunnel field effect devices
US12/550,857 2009-08-31
PCT/IB2010/053884 WO2011024152A1 (en) 2009-08-31 2010-08-30 Tunnel field effect devices

Publications (3)

Publication Number Publication Date
JP2013503471A JP2013503471A (ja) 2013-01-31
JP2013503471A5 JP2013503471A5 (enExample) 2013-10-10
JP5501463B2 true JP5501463B2 (ja) 2014-05-21

Family

ID=43127353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012526177A Expired - Fee Related JP5501463B2 (ja) 2009-08-31 2010-08-30 トンネル電界効果デバイス

Country Status (7)

Country Link
US (1) US8288803B2 (enExample)
JP (1) JP5501463B2 (enExample)
CN (1) CN102484132B (enExample)
DE (1) DE112010003495B4 (enExample)
GB (1) GB2485495B (enExample)
TW (1) TWI463653B (enExample)
WO (1) WO2011024152A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
KR102157825B1 (ko) 2014-01-16 2020-09-18 삼성전자주식회사 터널링 전계 효과 트랜지스터
CN104835840B (zh) * 2015-03-24 2017-09-19 北京大学 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6159777B2 (ja) * 2015-10-28 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6080989B2 (ja) * 2016-01-06 2017-02-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6114434B2 (ja) * 2016-04-21 2017-04-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN108369960A (zh) 2016-04-22 2018-08-03 华为技术有限公司 隧穿场效应晶体管及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
US7893476B2 (en) * 2006-09-15 2011-02-22 Imec Tunnel effect transistors based on silicon nanowires
EP1901355B1 (en) * 2006-09-15 2015-11-11 Imec Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Also Published As

Publication number Publication date
US8288803B2 (en) 2012-10-16
TWI463653B (zh) 2014-12-01
JP2013503471A (ja) 2013-01-31
TW201133837A (en) 2011-10-01
GB201200880D0 (en) 2012-02-29
GB2485495B (en) 2013-10-30
US20110049474A1 (en) 2011-03-03
DE112010003495T5 (de) 2012-09-20
CN102484132A (zh) 2012-05-30
CN102484132B (zh) 2014-07-30
WO2011024152A1 (en) 2011-03-03
DE112010003495B4 (de) 2013-12-12
GB2485495A (en) 2012-05-16

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