DE112010003495B4 - Tunnelfeldeffekttransistor-Struktur und Verfahren zur Herstellung - Google Patents

Tunnelfeldeffekttransistor-Struktur und Verfahren zur Herstellung Download PDF

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Publication number
DE112010003495B4
DE112010003495B4 DE112010003495T DE112010003495T DE112010003495B4 DE 112010003495 B4 DE112010003495 B4 DE 112010003495B4 DE 112010003495 T DE112010003495 T DE 112010003495T DE 112010003495 T DE112010003495 T DE 112010003495T DE 112010003495 B4 DE112010003495 B4 DE 112010003495B4
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Prior art keywords
field effect
effect transistor
transistor structure
semiconductor material
semiconductor
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English (en)
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DE112010003495T5 (de
Inventor
Siegfried Karg
Mikael T. Bjoerk
Joachim Knoch
Heike Riel
Walter H. Riess
Paul M. Solomon
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GlobalFoundries US Inc
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International Business Machines Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
DE112010003495T 2009-08-31 2010-08-30 Tunnelfeldeffekttransistor-Struktur und Verfahren zur Herstellung Active DE112010003495B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/550,857 US8288803B2 (en) 2009-08-31 2009-08-31 Tunnel field effect devices
US12/550,857 2009-08-31
PCT/IB2010/053884 WO2011024152A1 (en) 2009-08-31 2010-08-30 Tunnel field effect devices

Publications (2)

Publication Number Publication Date
DE112010003495T5 DE112010003495T5 (de) 2012-09-20
DE112010003495B4 true DE112010003495B4 (de) 2013-12-12

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DE112010003495T Active DE112010003495B4 (de) 2009-08-31 2010-08-30 Tunnelfeldeffekttransistor-Struktur und Verfahren zur Herstellung

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US (1) US8288803B2 (enExample)
JP (1) JP5501463B2 (enExample)
CN (1) CN102484132B (enExample)
DE (1) DE112010003495B4 (enExample)
GB (1) GB2485495B (enExample)
TW (1) TWI463653B (enExample)
WO (1) WO2011024152A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
KR102157825B1 (ko) 2014-01-16 2020-09-18 삼성전자주식회사 터널링 전계 효과 트랜지스터
CN104835840B (zh) * 2015-03-24 2017-09-19 北京大学 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6159777B2 (ja) * 2015-10-28 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6080989B2 (ja) * 2016-01-06 2017-02-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6114434B2 (ja) * 2016-04-21 2017-04-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN108369960A (zh) 2016-04-22 2018-08-03 华为技术有限公司 隧穿场效应晶体管及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067495A1 (en) * 2006-09-15 2008-03-20 Interuniversitair Microelektronica Centrum (Imec) Tunnel effect transistors based on silicon nanowires

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1901355B1 (en) * 2006-09-15 2015-11-11 Imec Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067495A1 (en) * 2006-09-15 2008-03-20 Interuniversitair Microelektronica Centrum (Imec) Tunnel effect transistors based on silicon nanowires

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Lu, W. et al.: Nanowire Transistor Performance Limits and Applications. In: IEEE Transactions on Electron Devices, 55, 2008, 11, 2859. *
Thelander, C. et al.: Nanowire-based one-dimensional electronics. In: materialstoday, 9, 2006, 10, 28. *

Also Published As

Publication number Publication date
US8288803B2 (en) 2012-10-16
TWI463653B (zh) 2014-12-01
JP2013503471A (ja) 2013-01-31
TW201133837A (en) 2011-10-01
GB201200880D0 (en) 2012-02-29
GB2485495B (en) 2013-10-30
US20110049474A1 (en) 2011-03-03
DE112010003495T5 (de) 2012-09-20
CN102484132A (zh) 2012-05-30
JP5501463B2 (ja) 2014-05-21
CN102484132B (zh) 2014-07-30
WO2011024152A1 (en) 2011-03-03
GB2485495A (en) 2012-05-16

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